IL143013A - A self-aligning MOSFET chip with a double gate with separate gates - Google Patents
A self-aligning MOSFET chip with a double gate with separate gatesInfo
- Publication number
- IL143013A IL143013A IL143013A IL14301301A IL143013A IL 143013 A IL143013 A IL 143013A IL 143013 A IL143013 A IL 143013A IL 14301301 A IL14301301 A IL 14301301A IL 143013 A IL143013 A IL 143013A
- Authority
- IL
- Israel
- Prior art keywords
- gate
- channel region
- transistor
- source
- dielectric
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 239000003989 dielectric material Substances 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 49
- 238000000034 method Methods 0.000 description 27
- 238000000151 deposition Methods 0.000 description 22
- 150000004767 nitrides Chemical class 0.000 description 20
- 230000008021 deposition Effects 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 229910021332 silicide Inorganic materials 0.000 description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000007943 implant Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000003631 wet chemical etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20413100P | 2000-05-15 | 2000-05-15 | |
| US09/612,260 US6982460B1 (en) | 2000-07-07 | 2000-07-07 | Self-aligned gate MOSFET with separate gates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL143013A0 IL143013A0 (en) | 2002-04-21 |
| IL143013A true IL143013A (en) | 2007-06-03 |
Family
ID=26899213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL143013A IL143013A (en) | 2000-05-15 | 2001-05-07 | A self-aligning MOSFET chip with a double gate with separate gates |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JP3872316B2 (zh) |
| KR (1) | KR100503722B1 (zh) |
| CN (2) | CN1219329C (zh) |
| DE (1) | DE10119411B4 (zh) |
| IE (1) | IE20010380A1 (zh) |
| IL (1) | IL143013A (zh) |
| SG (1) | SG103287A1 (zh) |
| TW (1) | TW490745B (zh) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100497672B1 (ko) * | 2002-05-10 | 2005-07-01 | 재단법인서울대학교산학협력재단 | 자기 배열 에스오아이 더블 게이트 트랜지스터를 이용한디램 및 이의 제조방법 |
| DE10241945A1 (de) * | 2002-09-10 | 2004-03-18 | Infineon Technologies Ag | Verfahren zum Herstellen eines planaren Transistors und planarer Transistor |
| DE10245153A1 (de) * | 2002-09-27 | 2004-04-15 | Infineon Technologies Ag | Integrierter Feldeffekttransistor mit zwei Steuerbereichen, Verwendung dieses Feldeffekttranistors und Herstellungsverfahren |
| JP4546021B2 (ja) | 2002-10-02 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 絶縁ゲート型電界効果型トランジスタ及び半導体装置 |
| WO2004088757A1 (ja) * | 2003-03-28 | 2004-10-14 | Fujitsu Limited | 半導体装置及びその製造方法 |
| FR2853454B1 (fr) | 2003-04-03 | 2005-07-15 | St Microelectronics Sa | Transistor mos haute densite |
| CN1322590C (zh) * | 2003-06-24 | 2007-06-20 | 北京大学 | 一种双栅金属氧化物半导体晶体管及其制备方法 |
| WO2005055326A1 (ja) * | 2003-12-05 | 2005-06-16 | National Institute Of Advanced Industrial Science And Technology | 二重ゲート電界効果トランジスタ |
| JP2005174964A (ja) * | 2003-12-05 | 2005-06-30 | National Institute Of Advanced Industrial & Technology | 二重ゲート電界効果トランジスタ |
| JP2005167163A (ja) * | 2003-12-05 | 2005-06-23 | National Institute Of Advanced Industrial & Technology | 二重ゲート電界効果トランジスタ |
| JP2005174960A (ja) * | 2003-12-05 | 2005-06-30 | National Institute Of Advanced Industrial & Technology | 二重ゲート電界効果トランジスタ |
| CN100444405C (zh) * | 2004-07-02 | 2008-12-17 | 中华映管股份有限公司 | 双栅级薄膜电晶体与像素结构及其制造方法 |
| KR100679693B1 (ko) * | 2004-10-29 | 2007-02-09 | 한국과학기술원 | 비대칭적인 일함수를 갖는 이중 게이트 구조를 이용한2비트 비휘발성 메모리 소자 제조 방법 및 그 구조 |
| US7202117B2 (en) * | 2005-01-31 | 2007-04-10 | Freescale Semiconductor, Inc. | Method of making a planar double-gated transistor |
| US7288805B2 (en) | 2005-02-24 | 2007-10-30 | International Business Machines Corporation | Double gate isolation |
| KR100745902B1 (ko) | 2005-10-24 | 2007-08-02 | 주식회사 하이닉스반도체 | 비휘발성 강유전체 메모리 장치 |
| CN101901837A (zh) * | 2010-06-24 | 2010-12-01 | 复旦大学 | 一种栅控pn场效应晶体管及其控制方法 |
| CN103022124B (zh) * | 2011-09-22 | 2015-08-19 | 中芯国际集成电路制造(北京)有限公司 | 双栅晶体管及其制造方法 |
| US8685823B2 (en) * | 2011-11-09 | 2014-04-01 | International Business Machines Corporation | Nanowire field effect transistor device |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4378627A (en) * | 1980-07-08 | 1983-04-05 | International Business Machines Corporation | Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes |
| JPS63308386A (ja) * | 1987-01-30 | 1988-12-15 | Sony Corp | 半導体装置とその製造方法 |
| US5296727A (en) * | 1990-08-24 | 1994-03-22 | Fujitsu Limited | Double gate FET and process for manufacturing same |
| US5166084A (en) * | 1991-09-03 | 1992-11-24 | Motorola, Inc. | Process for fabricating a silicon on insulator field effect transistor |
| US5273921A (en) * | 1991-12-27 | 1993-12-28 | Purdue Research Foundation | Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor |
| KR960002103B1 (ko) * | 1993-02-26 | 1996-02-10 | 현대전자산업주식회사 | 이중 게이트 박막트랜지스터 구조 및 그 제조방법 |
| JP3253808B2 (ja) * | 1994-07-07 | 2002-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US5604368A (en) * | 1994-07-15 | 1997-02-18 | International Business Machines Corporation | Self-aligned double-gate MOSFET by selective lateral epitaxy |
| US5773331A (en) * | 1996-12-17 | 1998-06-30 | International Business Machines Corporation | Method for making single and double gate field effect transistors with sidewall source-drain contacts |
| JP3699823B2 (ja) * | 1998-05-19 | 2005-09-28 | 株式会社東芝 | 半導体装置 |
| US6331476B1 (en) * | 1998-05-26 | 2001-12-18 | Mausushita Electric Industrial Co., Ltd. | Thin film transistor and producing method thereof |
| US6037204A (en) * | 1998-08-07 | 2000-03-14 | Taiwan Semiconductor Manufacturing Company | Silicon and arsenic double implanted pre-amorphization process for salicide technology |
| US6365465B1 (en) * | 1999-03-19 | 2002-04-02 | International Business Machines Corporation | Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques |
| KR100372820B1 (ko) * | 1999-06-29 | 2003-02-20 | 주식회사 하이닉스반도체 | 이중 실리콘 모스펫 및 그 제조방법 |
-
2001
- 2001-03-30 TW TW090107605A patent/TW490745B/zh not_active IP Right Cessation
- 2001-04-18 IE IE20010380A patent/IE20010380A1/en not_active IP Right Cessation
- 2001-04-20 DE DE10119411.0A patent/DE10119411B4/de not_active Expired - Fee Related
- 2001-04-23 KR KR10-2001-0021685A patent/KR100503722B1/ko not_active IP Right Cessation
- 2001-05-07 IL IL143013A patent/IL143013A/en not_active IP Right Cessation
- 2001-05-12 SG SG200102828A patent/SG103287A1/en unknown
- 2001-05-14 CN CNB01117935XA patent/CN1219329C/zh not_active Expired - Fee Related
- 2001-05-14 JP JP2001143342A patent/JP3872316B2/ja not_active Expired - Fee Related
- 2001-05-14 CN CNB2005100651111A patent/CN100356526C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW490745B (en) | 2002-06-11 |
| IL143013A0 (en) | 2002-04-21 |
| IE20010380A1 (en) | 2002-02-20 |
| CN1324113A (zh) | 2001-11-28 |
| CN100356526C (zh) | 2007-12-19 |
| CN1670929A (zh) | 2005-09-21 |
| KR20010105160A (ko) | 2001-11-28 |
| DE10119411A1 (de) | 2001-11-29 |
| DE10119411B4 (de) | 2015-06-11 |
| CN1219329C (zh) | 2005-09-14 |
| JP2002016255A (ja) | 2002-01-18 |
| KR100503722B1 (ko) | 2005-07-26 |
| SG103287A1 (en) | 2004-04-29 |
| JP3872316B2 (ja) | 2007-01-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| MM9K | Patent not in force due to non-payment of renewal fees |