IL139869A0 - System and method to correct for distortion caused by bulk heating in a substrate - Google Patents
System and method to correct for distortion caused by bulk heating in a substrateInfo
- Publication number
- IL139869A0 IL139869A0 IL13986900A IL13986900A IL139869A0 IL 139869 A0 IL139869 A0 IL 139869A0 IL 13986900 A IL13986900 A IL 13986900A IL 13986900 A IL13986900 A IL 13986900A IL 139869 A0 IL139869 A0 IL 139869A0
- Authority
- IL
- Israel
- Prior art keywords
- correct
- substrate
- distortion caused
- bulk heating
- bulk
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30455—Correction during exposure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30455—Correction during exposure
- H01J2237/30461—Correction during exposure pre-calculated
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/291,167 US6424879B1 (en) | 1999-04-13 | 1999-04-13 | System and method to correct for distortion caused by bulk heating in a substrate |
PCT/US2000/010038 WO2000062324A2 (en) | 1999-04-13 | 2000-04-12 | System and method to correct for distortion caused by bulk heating in a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
IL139869A0 true IL139869A0 (en) | 2002-02-10 |
Family
ID=23119160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL13986900A IL139869A0 (en) | 1999-04-13 | 2000-04-12 | System and method to correct for distortion caused by bulk heating in a substrate |
Country Status (9)
Country | Link |
---|---|
US (1) | US6424879B1 (xx) |
EP (1) | EP1095393B1 (xx) |
JP (2) | JP3615149B2 (xx) |
KR (1) | KR100446054B1 (xx) |
AU (1) | AU4349200A (xx) |
CA (1) | CA2334388A1 (xx) |
DE (1) | DE60039952D1 (xx) |
IL (1) | IL139869A0 (xx) |
WO (1) | WO2000062324A2 (xx) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6424879B1 (en) * | 1999-04-13 | 2002-07-23 | Applied Materials, Inc. | System and method to correct for distortion caused by bulk heating in a substrate |
US6883158B1 (en) * | 1999-05-20 | 2005-04-19 | Micronic Laser Systems Ab | Method for error reduction in lithography |
US7444616B2 (en) * | 1999-05-20 | 2008-10-28 | Micronic Laser Systems Ab | Method for error reduction in lithography |
US7082338B1 (en) | 1999-10-20 | 2006-07-25 | Caterpillar Inc. | Method for providing a process model for a material in a manufacturing process |
US6789051B1 (en) * | 1999-10-27 | 2004-09-07 | Caterpillar Inc | Method and apparatus for providing a simulation of a welding process using integrated models |
JP2001319872A (ja) * | 2000-03-01 | 2001-11-16 | Nikon Corp | 露光装置 |
US7098468B2 (en) * | 2002-11-07 | 2006-08-29 | Applied Materials, Inc. | Raster frame beam system for electron beam lithography |
WO2005047955A1 (en) * | 2003-11-12 | 2005-05-26 | Micronic Laser Systems Ab | Method and device for correcting slm stamp image imperfections |
US7025280B2 (en) * | 2004-01-30 | 2006-04-11 | Tokyo Electron Limited | Adaptive real time control of a reticle/mask system |
US7561251B2 (en) * | 2004-03-29 | 2009-07-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP5134767B2 (ja) * | 2005-04-19 | 2013-01-30 | 株式会社オーク製作所 | 描画データ補正機能を有する描画装置 |
US7625679B2 (en) * | 2005-09-23 | 2009-12-01 | Applied Materials, Inc. | Method of aligning a particle-beam-generated pattern to a pattern on a pre-patterned substrate |
US7388213B2 (en) * | 2005-09-23 | 2008-06-17 | Applied Materials, Inc. | Method of registering a blank substrate to a pattern generating particle beam apparatus and of correcting alignment during pattern generation |
US7830493B2 (en) * | 2005-10-04 | 2010-11-09 | Asml Netherlands B.V. | System and method for compensating for radiation induced thermal distortions in a substrate or projection system |
US7462429B2 (en) | 2005-10-12 | 2008-12-09 | Asml Netherlands B.V. | Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate |
JP4938784B2 (ja) | 2005-10-26 | 2012-05-23 | マイクロニック レーザー システムズ アクチボラゲット | 書込み装置および方法 |
US8122846B2 (en) | 2005-10-26 | 2012-02-28 | Micronic Mydata AB | Platforms, apparatuses, systems and methods for processing and analyzing substrates |
KR101415313B1 (ko) * | 2006-02-28 | 2014-07-04 | 마이크로닉 마이데이터 아베 | 기판 처리 및 분석용 플랫폼, 장치, 시스템, 그리고 방법 |
US8104951B2 (en) * | 2006-07-31 | 2012-01-31 | Applied Materials, Inc. | Temperature uniformity measurements during rapid thermal processing |
US8482732B2 (en) * | 2007-10-01 | 2013-07-09 | Maskless Lithography, Inc. | Alignment system for various materials and material flows |
JP5420942B2 (ja) * | 2009-03-19 | 2014-02-19 | 大日本スクリーン製造株式会社 | パターン描画装置およびパターン描画方法 |
JP5894856B2 (ja) * | 2012-05-22 | 2016-03-30 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
WO2014140047A2 (en) | 2013-03-12 | 2014-09-18 | Micronic Mydata AB | Method and device for writing photomasks with reduced mura errors |
WO2014140046A2 (en) | 2013-03-12 | 2014-09-18 | Micronic Mydata AB | Mechanically produced alignment fiducial method and device |
JP2015032613A (ja) * | 2013-07-31 | 2015-02-16 | 凸版印刷株式会社 | 荷電ビーム描画装置用の照射位置補正装置、荷電ビーム照射位置の補正方法、フォトマスクの製造方法及び半導体装置 |
JP2016184605A (ja) * | 2015-03-25 | 2016-10-20 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び描画データ作成方法 |
KR102395198B1 (ko) * | 2015-09-22 | 2022-05-06 | 삼성전자주식회사 | 마스크 패턴의 보정 방법 및 이를 이용하는 레티클의 제조 방법 |
US11637043B2 (en) | 2020-11-03 | 2023-04-25 | Applied Materials, Inc. | Analyzing in-plane distortion |
US11829077B2 (en) | 2020-12-11 | 2023-11-28 | Kla Corporation | System and method for determining post bonding overlay |
US11782411B2 (en) | 2021-07-28 | 2023-10-10 | Kla Corporation | System and method for mitigating overlay distortion patterns caused by a wafer bonding tool |
JP2023138912A (ja) | 2022-03-21 | 2023-10-03 | アイエムエス ナノファブリケーション ゲーエムベーハー | リソグラフィ描画法における熱膨張の補正 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0353513A (ja) * | 1989-07-20 | 1991-03-07 | Mitsubishi Electric Corp | 電子ビーム直接描画装置 |
JP2744833B2 (ja) * | 1990-01-24 | 1998-04-28 | 日本電子株式会社 | 荷電粒子ビーム描画方法 |
JP3047461B2 (ja) * | 1990-11-26 | 2000-05-29 | 株式会社ニコン | 投影露光装置、投影露光方法、及び半導体集積回路製造方法 |
JP3391409B2 (ja) * | 1993-07-14 | 2003-03-31 | 株式会社ニコン | 投影露光方法及び装置、並びに素子製造方法 |
US5424548A (en) | 1993-09-21 | 1995-06-13 | International Business Machines Corp. | Pattern specific calibration for E-beam lithography |
US5757015A (en) * | 1995-06-08 | 1998-05-26 | Fujitsu Limited | Charged-particle-beam exposure device and charged-particle-beam exposure method |
JP3274791B2 (ja) * | 1995-07-28 | 2002-04-15 | 株式会社日立製作所 | 電子線描画装置 |
JPH09232213A (ja) * | 1996-02-26 | 1997-09-05 | Nikon Corp | 投影露光装置 |
JP3484860B2 (ja) * | 1996-03-04 | 2004-01-06 | 株式会社日立製作所 | パターン露光方法および露光装置 |
JP2871627B2 (ja) * | 1996-10-17 | 1999-03-17 | 日本電気株式会社 | 電子線露光方法及びその装置 |
JPH10161296A (ja) * | 1996-12-02 | 1998-06-19 | Ishikawajima Harima Heavy Ind Co Ltd | レーザレチクル描画装置の座標歪み補正方法 |
US5742065A (en) | 1997-01-22 | 1998-04-21 | International Business Machines Corporation | Heater for membrane mask in an electron-beam lithography system |
US5847959A (en) | 1997-01-28 | 1998-12-08 | Etec Systems, Inc. | Method and apparatus for run-time correction of proximity effects in pattern generation |
JP2964978B2 (ja) * | 1997-03-03 | 1999-10-18 | 株式会社日立製作所 | 半導体製造方法と半導体製造システムおよびそれらにより製造された半導体デバイス |
US5834785A (en) | 1997-06-06 | 1998-11-10 | Nikon Corporation | Method and apparatus to compensate for thermal expansion in a lithographic process |
JPH11121354A (ja) * | 1997-10-09 | 1999-04-30 | Canon Inc | 歪み補正方法および荷電ビーム露光装置 |
US6424879B1 (en) * | 1999-04-13 | 2002-07-23 | Applied Materials, Inc. | System and method to correct for distortion caused by bulk heating in a substrate |
-
1999
- 1999-04-13 US US09/291,167 patent/US6424879B1/en not_active Expired - Fee Related
-
2000
- 2000-04-12 IL IL13986900A patent/IL139869A0/xx unknown
- 2000-04-12 EP EP00923351A patent/EP1095393B1/en not_active Expired - Lifetime
- 2000-04-12 AU AU43492/00A patent/AU4349200A/en not_active Abandoned
- 2000-04-12 DE DE60039952T patent/DE60039952D1/de not_active Expired - Lifetime
- 2000-04-12 JP JP2000611302A patent/JP3615149B2/ja not_active Expired - Fee Related
- 2000-04-12 WO PCT/US2000/010038 patent/WO2000062324A2/en active IP Right Grant
- 2000-04-12 KR KR10-2000-7014144A patent/KR100446054B1/ko not_active IP Right Cessation
- 2000-04-12 CA CA002334388A patent/CA2334388A1/en not_active Abandoned
-
2004
- 2004-05-21 JP JP2004152437A patent/JP4511242B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1095393B1 (en) | 2008-08-20 |
JP4511242B2 (ja) | 2010-07-28 |
US6424879B1 (en) | 2002-07-23 |
JP2002541676A (ja) | 2002-12-03 |
CA2334388A1 (en) | 2000-10-19 |
EP1095393A2 (en) | 2001-05-02 |
WO2000062324A3 (en) | 2001-02-15 |
KR20010052821A (ko) | 2001-06-25 |
JP3615149B2 (ja) | 2005-01-26 |
JP2004312030A (ja) | 2004-11-04 |
KR100446054B1 (ko) | 2004-08-30 |
AU4349200A (en) | 2000-11-14 |
DE60039952D1 (de) | 2008-10-02 |
WO2000062324A2 (en) | 2000-10-19 |
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