DE60039952D1 - System und verfahren zur korrektur von durch volumrungen - Google Patents

System und verfahren zur korrektur von durch volumrungen

Info

Publication number
DE60039952D1
DE60039952D1 DE60039952T DE60039952T DE60039952D1 DE 60039952 D1 DE60039952 D1 DE 60039952D1 DE 60039952 T DE60039952 T DE 60039952T DE 60039952 T DE60039952 T DE 60039952T DE 60039952 D1 DE60039952 D1 DE 60039952D1
Authority
DE
Germany
Prior art keywords
volumes
correcting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60039952T
Other languages
English (en)
Inventor
Francis C Chilese
Bassam Shamoun
David Trost
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE60039952D1 publication Critical patent/DE60039952D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H01J2237/30461—Correction during exposure pre-calculated

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE60039952T 1999-04-13 2000-04-12 System und verfahren zur korrektur von durch volumrungen Expired - Lifetime DE60039952D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/291,167 US6424879B1 (en) 1999-04-13 1999-04-13 System and method to correct for distortion caused by bulk heating in a substrate
PCT/US2000/010038 WO2000062324A2 (en) 1999-04-13 2000-04-12 System and method to correct for distortion caused by bulk heating in a substrate

Publications (1)

Publication Number Publication Date
DE60039952D1 true DE60039952D1 (de) 2008-10-02

Family

ID=23119160

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60039952T Expired - Lifetime DE60039952D1 (de) 1999-04-13 2000-04-12 System und verfahren zur korrektur von durch volumrungen

Country Status (9)

Country Link
US (1) US6424879B1 (de)
EP (1) EP1095393B1 (de)
JP (2) JP3615149B2 (de)
KR (1) KR100446054B1 (de)
AU (1) AU4349200A (de)
CA (1) CA2334388A1 (de)
DE (1) DE60039952D1 (de)
IL (1) IL139869A0 (de)
WO (1) WO2000062324A2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6424879B1 (en) * 1999-04-13 2002-07-23 Applied Materials, Inc. System and method to correct for distortion caused by bulk heating in a substrate
US6883158B1 (en) * 1999-05-20 2005-04-19 Micronic Laser Systems Ab Method for error reduction in lithography
US7444616B2 (en) * 1999-05-20 2008-10-28 Micronic Laser Systems Ab Method for error reduction in lithography
US7082338B1 (en) 1999-10-20 2006-07-25 Caterpillar Inc. Method for providing a process model for a material in a manufacturing process
US6789051B1 (en) * 1999-10-27 2004-09-07 Caterpillar Inc Method and apparatus for providing a simulation of a welding process using integrated models
JP2001319872A (ja) * 2000-03-01 2001-11-16 Nikon Corp 露光装置
US7098468B2 (en) * 2002-11-07 2006-08-29 Applied Materials, Inc. Raster frame beam system for electron beam lithography
WO2005047955A1 (en) * 2003-11-12 2005-05-26 Micronic Laser Systems Ab Method and device for correcting slm stamp image imperfections
US7025280B2 (en) * 2004-01-30 2006-04-11 Tokyo Electron Limited Adaptive real time control of a reticle/mask system
US7561251B2 (en) * 2004-03-29 2009-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5134767B2 (ja) * 2005-04-19 2013-01-30 株式会社オーク製作所 描画データ補正機能を有する描画装置
US7625679B2 (en) * 2005-09-23 2009-12-01 Applied Materials, Inc. Method of aligning a particle-beam-generated pattern to a pattern on a pre-patterned substrate
US7388213B2 (en) * 2005-09-23 2008-06-17 Applied Materials, Inc. Method of registering a blank substrate to a pattern generating particle beam apparatus and of correcting alignment during pattern generation
US7830493B2 (en) * 2005-10-04 2010-11-09 Asml Netherlands B.V. System and method for compensating for radiation induced thermal distortions in a substrate or projection system
US7462429B2 (en) 2005-10-12 2008-12-09 Asml Netherlands B.V. Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate
JP4938784B2 (ja) 2005-10-26 2012-05-23 マイクロニック レーザー システムズ アクチボラゲット 書込み装置および方法
US8122846B2 (en) 2005-10-26 2012-02-28 Micronic Mydata AB Platforms, apparatuses, systems and methods for processing and analyzing substrates
KR101415313B1 (ko) * 2006-02-28 2014-07-04 마이크로닉 마이데이터 아베 기판 처리 및 분석용 플랫폼, 장치, 시스템, 그리고 방법
US8104951B2 (en) * 2006-07-31 2012-01-31 Applied Materials, Inc. Temperature uniformity measurements during rapid thermal processing
US8482732B2 (en) * 2007-10-01 2013-07-09 Maskless Lithography, Inc. Alignment system for various materials and material flows
JP5420942B2 (ja) * 2009-03-19 2014-02-19 大日本スクリーン製造株式会社 パターン描画装置およびパターン描画方法
JP5894856B2 (ja) * 2012-05-22 2016-03-30 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
WO2014140047A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
WO2014140046A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Mechanically produced alignment fiducial method and device
JP2015032613A (ja) * 2013-07-31 2015-02-16 凸版印刷株式会社 荷電ビーム描画装置用の照射位置補正装置、荷電ビーム照射位置の補正方法、フォトマスクの製造方法及び半導体装置
JP2016184605A (ja) * 2015-03-25 2016-10-20 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び描画データ作成方法
KR102395198B1 (ko) * 2015-09-22 2022-05-06 삼성전자주식회사 마스크 패턴의 보정 방법 및 이를 이용하는 레티클의 제조 방법
US11637043B2 (en) 2020-11-03 2023-04-25 Applied Materials, Inc. Analyzing in-plane distortion
US11829077B2 (en) 2020-12-11 2023-11-28 Kla Corporation System and method for determining post bonding overlay
US11782411B2 (en) 2021-07-28 2023-10-10 Kla Corporation System and method for mitigating overlay distortion patterns caused by a wafer bonding tool
JP2023138912A (ja) 2022-03-21 2023-10-03 アイエムエス ナノファブリケーション ゲーエムベーハー リソグラフィ描画法における熱膨張の補正

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0353513A (ja) * 1989-07-20 1991-03-07 Mitsubishi Electric Corp 電子ビーム直接描画装置
JP2744833B2 (ja) * 1990-01-24 1998-04-28 日本電子株式会社 荷電粒子ビーム描画方法
JP3047461B2 (ja) * 1990-11-26 2000-05-29 株式会社ニコン 投影露光装置、投影露光方法、及び半導体集積回路製造方法
JP3391409B2 (ja) * 1993-07-14 2003-03-31 株式会社ニコン 投影露光方法及び装置、並びに素子製造方法
US5424548A (en) 1993-09-21 1995-06-13 International Business Machines Corp. Pattern specific calibration for E-beam lithography
US5757015A (en) * 1995-06-08 1998-05-26 Fujitsu Limited Charged-particle-beam exposure device and charged-particle-beam exposure method
JP3274791B2 (ja) * 1995-07-28 2002-04-15 株式会社日立製作所 電子線描画装置
JPH09232213A (ja) * 1996-02-26 1997-09-05 Nikon Corp 投影露光装置
JP3484860B2 (ja) * 1996-03-04 2004-01-06 株式会社日立製作所 パターン露光方法および露光装置
JP2871627B2 (ja) * 1996-10-17 1999-03-17 日本電気株式会社 電子線露光方法及びその装置
JPH10161296A (ja) * 1996-12-02 1998-06-19 Ishikawajima Harima Heavy Ind Co Ltd レーザレチクル描画装置の座標歪み補正方法
US5742065A (en) 1997-01-22 1998-04-21 International Business Machines Corporation Heater for membrane mask in an electron-beam lithography system
US5847959A (en) 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation
JP2964978B2 (ja) * 1997-03-03 1999-10-18 株式会社日立製作所 半導体製造方法と半導体製造システムおよびそれらにより製造された半導体デバイス
US5834785A (en) 1997-06-06 1998-11-10 Nikon Corporation Method and apparatus to compensate for thermal expansion in a lithographic process
JPH11121354A (ja) * 1997-10-09 1999-04-30 Canon Inc 歪み補正方法および荷電ビーム露光装置
US6424879B1 (en) * 1999-04-13 2002-07-23 Applied Materials, Inc. System and method to correct for distortion caused by bulk heating in a substrate

Also Published As

Publication number Publication date
EP1095393B1 (de) 2008-08-20
JP4511242B2 (ja) 2010-07-28
US6424879B1 (en) 2002-07-23
JP2002541676A (ja) 2002-12-03
CA2334388A1 (en) 2000-10-19
EP1095393A2 (de) 2001-05-02
WO2000062324A3 (en) 2001-02-15
KR20010052821A (ko) 2001-06-25
JP3615149B2 (ja) 2005-01-26
JP2004312030A (ja) 2004-11-04
KR100446054B1 (ko) 2004-08-30
AU4349200A (en) 2000-11-14
WO2000062324A2 (en) 2000-10-19
IL139869A0 (en) 2002-02-10

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