IL128199A - Writing drive and device for preloading and method - Google Patents

Writing drive and device for preloading and method

Info

Publication number
IL128199A
IL128199A IL12819999A IL12819999A IL128199A IL 128199 A IL128199 A IL 128199A IL 12819999 A IL12819999 A IL 12819999A IL 12819999 A IL12819999 A IL 12819999A IL 128199 A IL128199 A IL 128199A
Authority
IL
Israel
Prior art keywords
data
bit line
clock signal
signal
output
Prior art date
Application number
IL12819999A
Other languages
English (en)
Hebrew (he)
Other versions
IL128199A0 (en
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IL128199A0 publication Critical patent/IL128199A0/xx
Publication of IL128199A publication Critical patent/IL128199A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
IL12819999A 1998-02-06 1999-01-22 Writing drive and device for preloading and method IL128199A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/019,895 US5959916A (en) 1998-02-06 1998-02-06 Write driver and bit line precharge apparatus and method

Publications (2)

Publication Number Publication Date
IL128199A0 IL128199A0 (en) 1999-11-30
IL128199A true IL128199A (en) 2002-08-14

Family

ID=21795615

Family Applications (1)

Application Number Title Priority Date Filing Date
IL12819999A IL128199A (en) 1998-02-06 1999-01-22 Writing drive and device for preloading and method

Country Status (8)

Country Link
US (3) US5959916A (ko)
EP (1) EP0935253A2 (ko)
JP (1) JPH11317082A (ko)
KR (1) KR100331522B1 (ko)
CN (1) CN1169157C (ko)
IL (1) IL128199A (ko)
SG (1) SG70670A1 (ko)
TW (1) TW416054B (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4024975B2 (ja) * 2000-01-07 2007-12-19 株式会社東芝 データ伝送回路
JP3533357B2 (ja) * 2000-02-29 2004-05-31 株式会社東芝 論理演算機能を備えた半導体集積回路
US6430099B1 (en) 2001-05-11 2002-08-06 Broadcom Corporation Method and apparatus to conditionally precharge a partitioned read-only memory with shared wordlines for low power operation
EP1505605A1 (en) * 2003-08-06 2005-02-09 STMicroelectronics S.r.l. Improved sensing circuit for a semiconductor memory including bit line precharging and discharging functions
KR100698983B1 (ko) * 2004-03-30 2007-03-26 샤프 가부시키가이샤 표시 장치 및 구동 장치
KR100596436B1 (ko) 2004-07-29 2006-07-05 주식회사 하이닉스반도체 반도체 메모리 소자 및 그 테스트 방법
US7085184B1 (en) * 2004-09-27 2006-08-01 Nvidia Corporation Delayed bitline leakage compensation circuit for memory devices
KR100675517B1 (ko) 2005-09-09 2007-01-30 주식회사 엑셀반도체 시리얼 플래쉬 메모리 장치 및 프리차아지 방법
KR100745368B1 (ko) * 2005-11-22 2007-08-02 삼성전자주식회사 개선된 데이터 입출력 경로를 갖는 반도체 메모리 장치
US7600071B2 (en) * 2006-12-07 2009-10-06 International Business Machines Corporation Circuit having relaxed setup time via reciprocal clock and data gating
KR101239226B1 (ko) * 2007-08-02 2013-03-06 삼성전자주식회사 언먹스드 비트라인 스킴을 위한 기입 구동회로
US7782692B2 (en) * 2008-01-09 2010-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Single end read module for register files
US7586802B2 (en) * 2008-02-07 2009-09-08 Macronix International Co. Ltd. Memory, bit-line pre-charge circuit and bit-line pre-charge method
US8446791B2 (en) * 2010-12-03 2013-05-21 Oracle International Corporation Process tolerant large-swing sense amplfier with latching capability
US8817562B2 (en) * 2012-07-31 2014-08-26 Freescale Semiconductor, Inc. Devices and methods for controlling memory cell pre-charge operations
US9286970B2 (en) * 2014-07-08 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuit for pre-charging and write driving
US10269307B2 (en) * 2017-05-19 2019-04-23 Apple Inc. LED driver headroom voltage control systems and methods
US10762934B2 (en) * 2018-06-28 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Leakage pathway prevention in a memory storage device
US11011238B2 (en) * 2018-06-28 2021-05-18 Taiwan Semiconductor Manufacturing Company, Ltd. Floating data line circuits and methods

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3400824B2 (ja) * 1992-11-06 2003-04-28 三菱電機株式会社 半導体記憶装置
JP3672384B2 (ja) * 1996-07-24 2005-07-20 沖電気工業株式会社 センス回路

Also Published As

Publication number Publication date
EP0935253A2 (en) 1999-08-11
SG70670A1 (en) 2000-02-22
CN1227954A (zh) 1999-09-08
US5959916A (en) 1999-09-28
JPH11317082A (ja) 1999-11-16
US6104666A (en) 2000-08-15
KR100331522B1 (ko) 2002-04-06
KR19990072238A (ko) 1999-09-27
CN1169157C (zh) 2004-09-29
US6160748A (en) 2000-12-12
TW416054B (en) 2000-12-21
IL128199A0 (en) 1999-11-30

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