IL115893A - Structures of Perch Electric and their preparation - Google Patents
Structures of Perch Electric and their preparationInfo
- Publication number
- IL115893A IL115893A IL11589395A IL11589395A IL115893A IL 115893 A IL115893 A IL 115893A IL 11589395 A IL11589395 A IL 11589395A IL 11589395 A IL11589395 A IL 11589395A IL 115893 A IL115893 A IL 115893A
- Authority
- IL
- Israel
- Prior art keywords
- layer
- ferroelectric
- strontium
- titanate
- grown
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims description 14
- 238000002360 preparation method Methods 0.000 title description 2
- 239000010410 layer Substances 0.000 claims description 55
- 229910021320 cobalt-lanthanum-strontium oxide Inorganic materials 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910002115 bismuth titanate Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- GGGMJWBVJUTTLO-UHFFFAOYSA-N [Co]=O.[Sr].[La] Chemical compound [Co]=O.[Sr].[La] GGGMJWBVJUTTLO-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims 4
- JFWLFXVBLPDVDZ-UHFFFAOYSA-N [Ru]=O.[Sr] Chemical compound [Ru]=O.[Sr] JFWLFXVBLPDVDZ-UHFFFAOYSA-N 0.000 claims 2
- AZJLMWQBMKNUKB-UHFFFAOYSA-N [Zr].[La] Chemical compound [Zr].[La] AZJLMWQBMKNUKB-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 2
- SOEAEIPGNGLRLL-UHFFFAOYSA-N strontium chromium(3+) lanthanum(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[O--].[Cr+3].[Sr++].[La+3] SOEAEIPGNGLRLL-UHFFFAOYSA-N 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 2
- 239000004408 titanium dioxide Substances 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000015654 memory Effects 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 4
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 208000023414 familial retinal arterial macroaneurysm Diseases 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000001706 oxygenating effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/341,728 US5519235A (en) | 1994-11-18 | 1994-11-18 | Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL115893A0 IL115893A0 (en) | 1996-01-31 |
| IL115893A true IL115893A (en) | 1998-08-16 |
Family
ID=23338770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL11589395A IL115893A (en) | 1994-11-18 | 1995-11-06 | Structures of Perch Electric and their preparation |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US5519235A (de) |
| EP (1) | EP0792524B1 (de) |
| JP (1) | JP3040483B2 (de) |
| KR (1) | KR100296236B1 (de) |
| AU (1) | AU684407B2 (de) |
| DE (1) | DE69527642T2 (de) |
| IL (1) | IL115893A (de) |
| MX (1) | MX9703547A (de) |
| MY (1) | MY117284A (de) |
| NZ (1) | NZ296461A (de) |
| TW (1) | TW283234B (de) |
| WO (1) | WO1996016447A1 (de) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2703206B2 (ja) * | 1994-09-30 | 1998-01-26 | 三星電子株式会社 | 強誘電体キャパシタ及びその製造方法 |
| US5821598A (en) * | 1995-02-01 | 1998-10-13 | Research Corporation Technologies, Inc. | Uncooled amorphous YBaCuO thin film infrared detector |
| US5572060A (en) * | 1995-02-01 | 1996-11-05 | Southern Methodist University | Uncooled YBaCuO thin film infrared detector |
| CA2225681C (en) * | 1995-06-28 | 2001-09-11 | Bell Communications Research, Inc. | Barrier layer for ferroelectric capacitor integrated on silicon |
| US5798903A (en) * | 1995-12-26 | 1998-08-25 | Bell Communications Research, Inc. | Electrode structure for ferroelectric capacitor integrated on silicon |
| KR100199095B1 (ko) | 1995-12-27 | 1999-06-15 | 구본준 | 반도체 메모리 셀의 캐패시터 구조 및 그 제조방법 |
| US5593914A (en) * | 1996-03-19 | 1997-01-14 | Radiant Technologies, Inc. | Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces |
| JP4386210B2 (ja) * | 1996-04-19 | 2009-12-16 | パナソニック株式会社 | 半導体装置 |
| JP3594061B2 (ja) * | 1996-07-24 | 2004-11-24 | ソニー株式会社 | 層状結晶構造酸化物およびその製造方法 |
| KR19980014897A (ko) * | 1996-08-17 | 1998-05-25 | 구자홍 | 커패시터 및 그 제조방법 |
| JP2001504282A (ja) * | 1997-06-09 | 2001-03-27 | テルコーディア テクノロジーズ インコーポレイテッド | 結晶ペロブスカイト強誘電体セルのアニールおよび改良された障壁特性を示すセル |
| JP3169866B2 (ja) | 1997-11-04 | 2001-05-28 | 日本電気株式会社 | 薄膜キャパシタ及びその製造方法 |
| KR20010031913A (ko) * | 1997-11-10 | 2001-04-16 | 가나이 쓰토무 | 유전체 소자와 그 제조 방법 |
| KR100252854B1 (ko) * | 1997-12-26 | 2000-04-15 | 김영환 | 반도체 메모리 장치 및 그 제조방법 |
| KR100458084B1 (ko) * | 1997-12-27 | 2005-06-07 | 주식회사 하이닉스반도체 | 누설전류가 감소된 하부전극을 갖는 강유전체 커패시터 형성 방법 |
| KR100289389B1 (ko) * | 1998-03-05 | 2001-06-01 | 김영환 | 반도체소자의캐패시터제조방법 |
| US6128178A (en) * | 1998-07-20 | 2000-10-03 | International Business Machines Corporation | Very thin film capacitor for dynamic random access memory (DRAM) |
| US6194754B1 (en) * | 1999-03-05 | 2001-02-27 | Telcordia Technologies, Inc. | Amorphous barrier layer in a ferroelectric memory cell |
| US6312819B1 (en) | 1999-05-26 | 2001-11-06 | The Regents Of The University Of California | Oriented conductive oxide electrodes on SiO2/Si and glass |
| US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
| US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
| US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
| US6590236B1 (en) | 2000-07-24 | 2003-07-08 | Motorola, Inc. | Semiconductor structure for use with high-frequency signals |
| JP2004519864A (ja) * | 2000-08-24 | 2004-07-02 | コバ・テクノロジーズ・インコーポレイテッド | シングルトランジスタ希土類亜マンガン酸塩強誘電体不揮発性メモリセル |
| US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
| US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
| US20020164850A1 (en) | 2001-03-02 | 2002-11-07 | Gnadinger Alfred P. | Single transistor rare earth manganite ferroelectric nonvolatile memory cell |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6531740B2 (en) | 2001-07-17 | 2003-03-11 | Motorola, Inc. | Integrated impedance matching and stability network |
| US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
| US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| US20030015712A1 (en) * | 2001-07-23 | 2003-01-23 | Motorola, Inc. | Fabrication of an optical communication device within a semiconductor structure |
| US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
| US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
| US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
| US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
| JP4708667B2 (ja) * | 2002-08-08 | 2011-06-22 | キヤノン株式会社 | アクチュエータおよび液体噴射ヘッド |
| US6825517B2 (en) | 2002-08-28 | 2004-11-30 | Cova Technologies, Inc. | Ferroelectric transistor with enhanced data retention |
| US6888736B2 (en) | 2002-09-19 | 2005-05-03 | Cova Technologies, Inc. | Ferroelectric transistor for storing two data bits |
| US6714435B1 (en) | 2002-09-19 | 2004-03-30 | Cova Technologies, Inc. | Ferroelectric transistor for storing two data bits |
| US6762481B2 (en) * | 2002-10-08 | 2004-07-13 | The University Of Houston System | Electrically programmable nonvolatile variable capacitor |
| US20060124470A1 (en) * | 2002-11-05 | 2006-06-15 | Tetsuji Zama | Conductive polymer composite structure |
| US7754353B2 (en) * | 2003-10-31 | 2010-07-13 | Newns Dennis M | Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layer |
| TWI244205B (en) * | 2004-06-11 | 2005-11-21 | Univ Tsinghua | A lead barium zirconate-based fatigue resistance ferroelectric and ferroelectric memory device made from the same |
| WO2006009218A1 (ja) * | 2004-07-22 | 2006-01-26 | Nippon Telegraph And Telephone Corporation | ２安定抵抗値取得装置及びその製造方法並びに金属酸化物薄膜及びその製造方法 |
| WO2008133740A2 (en) * | 2006-12-01 | 2008-11-06 | The Trustees Of The University Of Pennsylvania | Ferroelectric ultrathin perovskite films |
| US20120232632A1 (en) * | 2009-10-30 | 2012-09-13 | St. Jude Medical Ab | medical implantable lead |
| CA2834891A1 (en) * | 2011-05-27 | 2012-12-06 | University Of North Texas | Graphene magnetic tunnel junction spin filters and methods of making |
| US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
| US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| WO2016160917A1 (en) * | 2015-03-30 | 2016-10-06 | Massachusetts Institute Of Technology | Segregation resistant perovskite oxides with surface modification |
| WO2019173626A1 (en) | 2018-03-07 | 2019-09-12 | Space Charge, LLC | Thin-film solid-state energy-storage devices |
| CN113892155A (zh) | 2019-04-08 | 2022-01-04 | 开普勒计算公司 | 掺杂极性层及并入有掺杂极性层的半导体装置 |
| US11289497B2 (en) | 2019-12-27 | 2022-03-29 | Kepler Computing Inc. | Integration method of ferroelectric memory array |
| US11482528B2 (en) | 2019-12-27 | 2022-10-25 | Kepler Computing Inc. | Pillar capacitor and method of fabricating such |
| US11430861B2 (en) | 2019-12-27 | 2022-08-30 | Kepler Computing Inc. | Ferroelectric capacitor and method of patterning such |
| US11501905B2 (en) * | 2020-08-31 | 2022-11-15 | Boston Applied Technologies, Inc. | Composition and method of making a monolithic heterostructure of multiferroic thin films |
| US11785782B1 (en) | 2021-06-11 | 2023-10-10 | Kepler Computing Inc. | Embedded memory with encapsulation layer adjacent to a memory stack |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL9000602A (nl) * | 1990-03-16 | 1991-10-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met geheugenelementen vormende condensatoren met een ferroelectrisch dielectricum. |
| JP3006053B2 (ja) * | 1990-08-07 | 2000-02-07 | セイコーエプソン株式会社 | 半導体装置 |
| TW200600B (de) * | 1991-10-01 | 1993-02-21 | Philips Nv | |
| US5155658A (en) * | 1992-03-05 | 1992-10-13 | Bell Communications Research, Inc. | Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films |
| US5270298A (en) * | 1992-03-05 | 1993-12-14 | Bell Communications Research, Inc. | Cubic metal oxide thin film epitaxially grown on silicon |
| US5248564A (en) * | 1992-12-09 | 1993-09-28 | Bell Communications Research, Inc. | C-axis perovskite thin films grown on silicon dioxide |
| US5387459A (en) * | 1992-12-17 | 1995-02-07 | Eastman Kodak Company | Multilayer structure having an epitaxial metal electrode |
-
1994
- 1994-11-18 US US08/341,728 patent/US5519235A/en not_active Expired - Fee Related
-
1995
- 1995-11-03 JP JP8516946A patent/JP3040483B2/ja not_active Expired - Lifetime
- 1995-11-03 EP EP95939139A patent/EP0792524B1/de not_active Expired - Lifetime
- 1995-11-03 KR KR1019970703288A patent/KR100296236B1/ko not_active IP Right Cessation
- 1995-11-03 WO PCT/US1995/014740 patent/WO1996016447A1/en active IP Right Grant
- 1995-11-03 MX MX9703547A patent/MX9703547A/es not_active IP Right Cessation
- 1995-11-03 AU AU41083/96A patent/AU684407B2/en not_active Ceased
- 1995-11-03 DE DE69527642T patent/DE69527642T2/de not_active Expired - Fee Related
- 1995-11-03 NZ NZ296461A patent/NZ296461A/xx unknown
- 1995-11-06 IL IL11589395A patent/IL115893A/en active IP Right Grant
- 1995-11-18 MY MYPI95003518A patent/MY117284A/en unknown
- 1995-11-20 TW TW084112387A patent/TW283234B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP0792524A1 (de) | 1997-09-03 |
| KR100296236B1 (ko) | 2001-08-07 |
| IL115893A0 (en) | 1996-01-31 |
| DE69527642D1 (de) | 2002-09-05 |
| US5519235A (en) | 1996-05-21 |
| JP3040483B2 (ja) | 2000-05-15 |
| JPH09512963A (ja) | 1997-12-22 |
| EP0792524A4 (de) | 1999-03-17 |
| TW283234B (de) | 1996-08-11 |
| AU684407B2 (en) | 1997-12-11 |
| AU4108396A (en) | 1996-06-17 |
| MY117284A (en) | 2004-06-30 |
| KR970707588A (ko) | 1997-12-01 |
| NZ296461A (en) | 1999-03-29 |
| MX9703547A (es) | 1997-08-30 |
| EP0792524B1 (de) | 2002-07-31 |
| DE69527642T2 (de) | 2003-04-03 |
| WO1996016447A1 (en) | 1996-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU684407B2 (en) | Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes | |
| US5479317A (en) | Ferroelectric capacitor heterostructure and method of making same | |
| MXPA97003547A (en) | Heteroestructura of polycrystalline ferroelectric capacitor that uses hybrid electrodes | |
| KR100460595B1 (ko) | 비휘발성 메모리에 사용되는 지르코늄 산화물 상의 단일 씨-축 납게르마늄산화물 박막과 그 제조방법 | |
| US5753934A (en) | Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film | |
| EP0747937B1 (de) | Verfahren zur Herstellung eines mit einer dünnen ferroelektrischen Schicht überdeckten Substrats | |
| EP0732422B1 (de) | Mit einer ferroelektrischen Dünnschicht beschichtetes Substrat, Methode zu dessen Herstellung sowie nichtflüchtiger Speicher, der dieses Substrat enthält | |
| US5248564A (en) | C-axis perovskite thin films grown on silicon dioxide | |
| US5919515A (en) | Ferroelectric thin film, electric device and method for preparing ferroelectric thin film | |
| US5576564A (en) | Ferroelectric thin film with intermediate buffer layer | |
| EP1486590B1 (de) | Mehrschichtige Struktur und Aktuatorelement, kapazitives Element und Filterelement mit derselben | |
| US6197600B1 (en) | Ferroelectric thin film, manufacturing method thereof and device incorporating the same | |
| JP4772188B2 (ja) | 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法 | |
| US20060288928A1 (en) | Perovskite-based thin film structures on miscut semiconductor substrates | |
| KR19990030031A (ko) | 강유전체 박막 디바이스 및 이것의 제조방법 | |
| JPH09110592A (ja) | 積層薄膜、電子デバイス用基板、電子デバイスおよび積層薄膜の製造方法 | |
| EP0616726A1 (de) | Verwendung von schichtigem übergitter material | |
| US20020006733A1 (en) | Multilayer thin film and its fabrication process as well as electron device | |
| JP2000169297A (ja) | 酸化物強誘電体薄膜の製造方法、酸化物強誘電体薄膜及び酸化物強誘電体薄膜素子 | |
| KR100378276B1 (ko) | 절연 재료, 절연막 피복 기판, 그 제조 방법 및 박막 소자 | |
| US20020153543A1 (en) | Method for manufacturing oxide ferroelectric thin film oxide ferroelectric thin film and oxide ferroelectric thin film element | |
| KR19990006318A (ko) | 강유전체막의 퇴적 방법 및 강유전체 커패시터 소자 | |
| CA2203524C (en) | Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes | |
| KR19990072528A (ko) | 강유전체박막소자및그제조방법 | |
| CN1164295A (zh) | 使用混合电极的多晶铁电电容器异质结构 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed |