DE69527642T2 - Polykristalline ferroelektrische kondensatorheterostruktur mit hybridelektroden - Google Patents

Polykristalline ferroelektrische kondensatorheterostruktur mit hybridelektroden

Info

Publication number
DE69527642T2
DE69527642T2 DE69527642T DE69527642T DE69527642T2 DE 69527642 T2 DE69527642 T2 DE 69527642T2 DE 69527642 T DE69527642 T DE 69527642T DE 69527642 T DE69527642 T DE 69527642T DE 69527642 T2 DE69527642 T2 DE 69527642T2
Authority
DE
Germany
Prior art keywords
ferroelectric capacitor
hybrid electrodes
polycrystalline ferroelectric
heterostructure
capacitor heterostructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69527642T
Other languages
English (en)
Other versions
DE69527642D1 (de
Inventor
Ramamoorthy Ramesh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iconectiv LLC
Original Assignee
Telcordia Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telcordia Technologies Inc filed Critical Telcordia Technologies Inc
Application granted granted Critical
Publication of DE69527642D1 publication Critical patent/DE69527642D1/de
Publication of DE69527642T2 publication Critical patent/DE69527642T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
DE69527642T 1994-11-18 1995-11-03 Polykristalline ferroelektrische kondensatorheterostruktur mit hybridelektroden Expired - Fee Related DE69527642T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/341,728 US5519235A (en) 1994-11-18 1994-11-18 Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes
PCT/US1995/014740 WO1996016447A1 (en) 1994-11-18 1995-11-03 Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes

Publications (2)

Publication Number Publication Date
DE69527642D1 DE69527642D1 (de) 2002-09-05
DE69527642T2 true DE69527642T2 (de) 2003-04-03

Family

ID=23338770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69527642T Expired - Fee Related DE69527642T2 (de) 1994-11-18 1995-11-03 Polykristalline ferroelektrische kondensatorheterostruktur mit hybridelektroden

Country Status (12)

Country Link
US (1) US5519235A (de)
EP (1) EP0792524B1 (de)
JP (1) JP3040483B2 (de)
KR (1) KR100296236B1 (de)
AU (1) AU684407B2 (de)
DE (1) DE69527642T2 (de)
IL (1) IL115893A (de)
MX (1) MX9703547A (de)
MY (1) MY117284A (de)
NZ (1) NZ296461A (de)
TW (1) TW283234B (de)
WO (1) WO1996016447A1 (de)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703206B2 (ja) * 1994-09-30 1998-01-26 三星電子株式会社 強誘電体キャパシタ及びその製造方法
US5572060A (en) * 1995-02-01 1996-11-05 Southern Methodist University Uncooled YBaCuO thin film infrared detector
US5821598A (en) * 1995-02-01 1998-10-13 Research Corporation Technologies, Inc. Uncooled amorphous YBaCuO thin film infrared detector
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
US5798903A (en) * 1995-12-26 1998-08-25 Bell Communications Research, Inc. Electrode structure for ferroelectric capacitor integrated on silicon
KR100199095B1 (ko) 1995-12-27 1999-06-15 구본준 반도체 메모리 셀의 캐패시터 구조 및 그 제조방법
US5593914A (en) * 1996-03-19 1997-01-14 Radiant Technologies, Inc. Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces
TW322635B (de) 1996-04-19 1997-12-11 Matsushita Electron Co Ltd
JP3594061B2 (ja) * 1996-07-24 2004-11-24 ソニー株式会社 層状結晶構造酸化物およびその製造方法
KR19980014897A (ko) * 1996-08-17 1998-05-25 구자홍 커패시터 및 그 제조방법
KR20010013595A (ko) 1997-06-09 2001-02-26 엔, 마이클 그로브 개선된 장벽 특성을 나타내는 결정 퍼로브스카이트강유전체 셀을 어닐링하는 방법
JP3169866B2 (ja) 1997-11-04 2001-05-28 日本電気株式会社 薄膜キャパシタ及びその製造方法
WO1999025014A1 (fr) * 1997-11-10 1999-05-20 Hitachi, Ltd. Element dielectrique et mode de fabrication
KR100252854B1 (ko) * 1997-12-26 2000-04-15 김영환 반도체 메모리 장치 및 그 제조방법
KR100458084B1 (ko) * 1997-12-27 2005-06-07 주식회사 하이닉스반도체 누설전류가 감소된 하부전극을 갖는 강유전체 커패시터 형성 방법
KR100289389B1 (ko) * 1998-03-05 2001-06-01 김영환 반도체소자의캐패시터제조방법
US6128178A (en) * 1998-07-20 2000-10-03 International Business Machines Corporation Very thin film capacitor for dynamic random access memory (DRAM)
US6194754B1 (en) * 1999-03-05 2001-02-27 Telcordia Technologies, Inc. Amorphous barrier layer in a ferroelectric memory cell
US6312819B1 (en) 1999-05-26 2001-11-06 The Regents Of The University Of California Oriented conductive oxide electrodes on SiO2/Si and glass
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
JP2004519864A (ja) * 2000-08-24 2004-07-02 コバ・テクノロジーズ・インコーポレイテッド シングルトランジスタ希土類亜マンガン酸塩強誘電体不揮発性メモリセル
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
WO2002071477A1 (en) 2001-03-02 2002-09-12 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6531740B2 (en) 2001-07-17 2003-03-11 Motorola, Inc. Integrated impedance matching and stability network
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US20030015712A1 (en) * 2001-07-23 2003-01-23 Motorola, Inc. Fabrication of an optical communication device within a semiconductor structure
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
JP4708667B2 (ja) * 2002-08-08 2011-06-22 キヤノン株式会社 アクチュエータおよび液体噴射ヘッド
US6825517B2 (en) * 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
US6714435B1 (en) 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6762481B2 (en) * 2002-10-08 2004-07-13 The University Of Houston System Electrically programmable nonvolatile variable capacitor
EP1589059B1 (de) * 2002-11-05 2012-06-06 Eamex Corporation Leitfähiges polymer enthaltende verbundstruktur
US7754353B2 (en) * 2003-10-31 2010-07-13 Newns Dennis M Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layer
TWI244205B (en) * 2004-06-11 2005-11-21 Univ Tsinghua A lead barium zirconate-based fatigue resistance ferroelectric and ferroelectric memory device made from the same
JP4559425B2 (ja) * 2004-07-22 2010-10-06 日本電信電話株式会社 ２安定抵抗値取得装置及びその製造方法
US8603573B2 (en) * 2006-12-01 2013-12-10 The Trustees Of The University Of Pennsylvania Ferroelectric ultrathin perovskite films
WO2011053199A1 (en) * 2009-10-30 2011-05-05 St. Jude Medical Ab A medical implantable lead
WO2012166562A1 (en) * 2011-05-27 2012-12-06 University Of North Texas Graphene magnetic tunnel junction spin filters and methods of making
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US11179682B2 (en) * 2015-03-30 2021-11-23 Massachusetts Institute Of Technology Segregation resistant perovskite oxides with surface modification
WO2019173626A1 (en) 2018-03-07 2019-09-12 Space Charge, LLC Thin-film solid-state energy-storage devices
JP2022527654A (ja) 2019-04-08 2022-06-02 ケプラー コンピューティング インコーポレイテッド ドープされた極性層及びそれを組み込んだ半導体デバイス
US11289497B2 (en) 2019-12-27 2022-03-29 Kepler Computing Inc. Integration method of ferroelectric memory array
US11482528B2 (en) 2019-12-27 2022-10-25 Kepler Computing Inc. Pillar capacitor and method of fabricating such
US11430861B2 (en) 2019-12-27 2022-08-30 Kepler Computing Inc. Ferroelectric capacitor and method of patterning such
US11501905B2 (en) * 2020-08-31 2022-11-15 Boston Applied Technologies, Inc. Composition and method of making a monolithic heterostructure of multiferroic thin films
US11765909B1 (en) 2021-06-11 2023-09-19 Kepler Computing Inc. Process integration flow for embedded memory enabled by decoupling processing of a memory area from a non-memory area

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9000602A (nl) * 1990-03-16 1991-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met geheugenelementen vormende condensatoren met een ferroelectrisch dielectricum.
JP3006053B2 (ja) * 1990-08-07 2000-02-07 セイコーエプソン株式会社 半導体装置
TW200600B (de) * 1991-10-01 1993-02-21 Philips Nv
US5155658A (en) * 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5248564A (en) * 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
US5387459A (en) * 1992-12-17 1995-02-07 Eastman Kodak Company Multilayer structure having an epitaxial metal electrode

Also Published As

Publication number Publication date
TW283234B (de) 1996-08-11
IL115893A (en) 1998-08-16
IL115893A0 (en) 1996-01-31
AU684407B2 (en) 1997-12-11
JP3040483B2 (ja) 2000-05-15
EP0792524B1 (de) 2002-07-31
JPH09512963A (ja) 1997-12-22
MY117284A (en) 2004-06-30
US5519235A (en) 1996-05-21
EP0792524A4 (de) 1999-03-17
WO1996016447A1 (en) 1996-05-30
AU4108396A (en) 1996-06-17
MX9703547A (es) 1997-08-30
DE69527642D1 (de) 2002-09-05
NZ296461A (en) 1999-03-29
KR970707588A (ko) 1997-12-01
EP0792524A1 (de) 1997-09-03
KR100296236B1 (ko) 2001-08-07

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee