HK27996A - A method of producing a semiconductor integrated circuit device - Google Patents

A method of producing a semiconductor integrated circuit device

Info

Publication number
HK27996A
HK27996A HK27996A HK27996A HK27996A HK 27996 A HK27996 A HK 27996A HK 27996 A HK27996 A HK 27996A HK 27996 A HK27996 A HK 27996A HK 27996 A HK27996 A HK 27996A
Authority
HK
Hong Kong
Prior art keywords
producing
integrated circuit
semiconductor integrated
circuit device
semiconductor
Prior art date
Application number
HK27996A
Other languages
English (en)
Inventor
Kousuke Okuyama
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK27996A publication Critical patent/HK27996A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM
    • H10B20/383—Channel doping programmed

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
HK27996A 1987-11-13 1996-02-15 A method of producing a semiconductor integrated circuit device HK27996A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62285318A JP2555103B2 (ja) 1987-11-13 1987-11-13 半導体集積回路装置の製造方法

Publications (1)

Publication Number Publication Date
HK27996A true HK27996A (en) 1996-02-23

Family

ID=17689985

Family Applications (1)

Application Number Title Priority Date Filing Date
HK27996A HK27996A (en) 1987-11-13 1996-02-15 A method of producing a semiconductor integrated circuit device

Country Status (6)

Country Link
US (2) US4898840A (de)
EP (1) EP0317136B1 (de)
JP (1) JP2555103B2 (de)
KR (1) KR0120926B1 (de)
DE (1) DE3851204T2 (de)
HK (1) HK27996A (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5734188A (en) * 1987-09-19 1998-03-31 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
JP2555103B2 (ja) * 1987-11-13 1996-11-20 株式会社日立製作所 半導体集積回路装置の製造方法
US5917211A (en) * 1988-09-19 1999-06-29 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
JP2509706B2 (ja) * 1989-08-18 1996-06-26 株式会社東芝 マスクｒｏｍの製造方法
JP2509707B2 (ja) * 1989-09-04 1996-06-26 株式会社東芝 半導体装置の製造方法
JP2577093B2 (ja) * 1989-09-14 1997-01-29 三星電子株式会社 マルチゲート型ｍｏｓ トランジスタ構造を具備した半導体素子のセルフアライメントイオン注入方法
JP2565213B2 (ja) * 1989-10-27 1996-12-18 ソニー株式会社 読み出し専用メモリ装置
JPH0487370A (ja) * 1990-07-30 1992-03-19 Sharp Corp 半導体装置の製造方法
US5639690A (en) * 1991-03-12 1997-06-17 Oki Electric Industry Co., Ltd. Method for manufacturing a conductive pattern structure for a semiconductor device
JPH0669208A (ja) * 1991-03-12 1994-03-11 Oki Electric Ind Co Ltd 半導体装置
JP2604071B2 (ja) * 1991-05-14 1997-04-23 株式会社東芝 半導体装置の製造方法
US5236853A (en) * 1992-02-21 1993-08-17 United Microelectronics Corporation Self-aligned double density polysilicon lines for ROM and EPROM
JP2908139B2 (ja) * 1992-09-16 1999-06-21 株式会社東芝 ２層ゲートプログラムｒｏｍの製造方法
US5393233A (en) * 1993-07-14 1995-02-28 United Microelectronics Corporation Process for fabricating double poly high density buried bit line mask ROM
JP2581415B2 (ja) * 1993-10-08 1997-02-12 日本電気株式会社 半導体記憶装置の製造方法
US5429967A (en) * 1994-04-08 1995-07-04 United Microelectronics Corporation Process for producing a very high density mask ROM
US5380676A (en) * 1994-05-23 1995-01-10 United Microelectronics Corporation Method of manufacturing a high density ROM
US5488009A (en) * 1994-11-23 1996-01-30 United Microelectronics Corporation Post-titanium nitride mask ROM programming method
US5620915A (en) * 1995-07-12 1997-04-15 United Microelectronics Corporation Method for bypassing null-code sections for read-only memory by access line control
US5943573A (en) * 1997-01-17 1999-08-24 United Microelectronics Corp. Method of fabricating semiconductor read-only memory device
JP2001244436A (ja) * 2000-03-01 2001-09-07 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2003099414A (ja) * 2001-09-21 2003-04-04 Mitsubishi Electric Corp 半導体集積回路
US7785214B2 (en) 2008-11-26 2010-08-31 Sri Sports Limited Golf club head

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951143B2 (ja) * 1976-08-25 1984-12-12 株式会社日立製作所 Ｍｉｓ形半導体装置
US4342100A (en) * 1979-01-08 1982-07-27 Texas Instruments Incorporated Implant programmable metal gate MOS read only memory
JPS5831901B2 (ja) * 1979-05-10 1983-07-09 忠敬 駒木根 無機質防菌防腐用飼料添加剤
JPS55150860A (en) * 1979-05-10 1980-11-25 Toshiyuki Oota Liquid food
US4332077A (en) * 1979-08-10 1982-06-01 Rca Corporation Method of making electrically programmable control gate injected floating gate solid state memory transistor
US4295209A (en) * 1979-11-28 1981-10-13 General Motors Corporation Programming an IGFET read-only-memory
US4364167A (en) * 1979-11-28 1982-12-21 General Motors Corporation Programming an IGFET read-only-memory
US4458406A (en) * 1979-12-28 1984-07-10 Ibm Corporation Making LSI devices with double level polysilicon structures
JPS56150860A (en) * 1980-04-24 1981-11-21 Fujitsu Ltd Manufacture of semiconductor memory device
JPS56150858A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device and manufacture thereof
US4531203A (en) * 1980-12-20 1985-07-23 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device and method for manufacturing the same
JPS57109190A (en) * 1980-12-26 1982-07-07 Fujitsu Ltd Semiconductor storage device and its manufacture
US4364165A (en) * 1981-05-28 1982-12-21 General Motors Corporation Late programming using a silicon nitride interlayer
FR2530905B1 (fr) * 1982-07-26 1986-07-04 Tigre Procede de traitement et de manipulation d'images et console pour la mise en oeuvre du procede
JPS6016561A (ja) * 1983-07-06 1985-01-28 Osamu Takami 蓮根を主材とした麺類とその製造方法
JPS6142168A (ja) * 1984-08-02 1986-02-28 Sharp Corp 読み出し専用メモリ
JPS6143470A (ja) * 1984-08-08 1986-03-03 Hitachi Ltd 半導体装置の製造方法
JPS628558A (ja) * 1985-07-05 1987-01-16 Hitachi Ltd 半導体集積回路装置
JPS6216561A (ja) * 1985-07-15 1987-01-24 Fuji Xerox Co Ltd 半導体装置およびその製造方法
JPH0797606B2 (ja) * 1986-10-22 1995-10-18 株式会社日立製作所 半導体集積回路装置の製造方法
JPS63239976A (ja) * 1987-03-27 1988-10-05 Toshiba Corp マスクｒｏｍの製造方法
JP2555103B2 (ja) * 1987-11-13 1996-11-20 株式会社日立製作所 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
JPH01128564A (ja) 1989-05-22
KR890008984A (ko) 1989-07-13
EP0317136A2 (de) 1989-05-24
JP2555103B2 (ja) 1996-11-20
DE3851204D1 (de) 1994-09-29
US4898840A (en) 1990-02-06
EP0317136B1 (de) 1994-08-24
DE3851204T2 (de) 1995-03-02
KR0120926B1 (ko) 1997-10-27
EP0317136A3 (de) 1991-01-16
US5063170A (en) 1991-11-05

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)