GB2193036B - Method of fabricating a semiconductor integrated circuit device - Google Patents

Method of fabricating a semiconductor integrated circuit device

Info

Publication number
GB2193036B
GB2193036B GB8717473A GB8717473A GB2193036B GB 2193036 B GB2193036 B GB 2193036B GB 8717473 A GB8717473 A GB 8717473A GB 8717473 A GB8717473 A GB 8717473A GB 2193036 B GB2193036 B GB 2193036B
Authority
GB
United Kingdom
Prior art keywords
fabricating
integrated circuit
semiconductor integrated
circuit device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8717473A
Other versions
GB2193036A (en
GB8717473D0 (en
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61174861A external-priority patent/JPH0734452B2/en
Priority claimed from JP18059786A external-priority patent/JPS6337642A/en
Priority claimed from JP61216730A external-priority patent/JPH0734453B2/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB8717473D0 publication Critical patent/GB8717473D0/en
Publication of GB2193036A publication Critical patent/GB2193036A/en
Application granted granted Critical
Publication of GB2193036B publication Critical patent/GB2193036B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising semiconducting material
GB8717473A 1986-07-24 1987-07-23 Method of fabricating a semiconductor integrated circuit device Expired - Lifetime GB2193036B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61174861A JPH0734452B2 (en) 1986-07-24 1986-07-24 Method for manufacturing semiconductor integrated circuit device
JP18059786A JPS6337642A (en) 1986-07-31 1986-07-31 Semiconductor integrated circuit device
JP61216730A JPH0734453B2 (en) 1986-09-12 1986-09-12 Method for manufacturing semiconductor integrated circuit device

Publications (3)

Publication Number Publication Date
GB8717473D0 GB8717473D0 (en) 1987-08-26
GB2193036A GB2193036A (en) 1988-01-27
GB2193036B true GB2193036B (en) 1990-05-02

Family

ID=27324011

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8717473A Expired - Lifetime GB2193036B (en) 1986-07-24 1987-07-23 Method of fabricating a semiconductor integrated circuit device

Country Status (1)

Country Link
GB (1) GB2193036B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07502868A (en) * 1991-10-30 1995-03-23 ハリス・コーポレーション Analog-digital switch and manufacturing method thereof
US6265752B1 (en) * 1999-05-25 2001-07-24 Taiwan Semiconductor Manufacturing, Co., Inc. Method of forming a HVNMOS with an N+ buried layer combined with N well and a structure of the same
US6461925B1 (en) * 2000-03-30 2002-10-08 Motorola, Inc. Method of manufacturing a heterojunction BiCMOS integrated circuit
US6875648B1 (en) * 2004-07-09 2005-04-05 Atmel Corporation Fabrication of an EEPROM cell with emitter-polysilicon source/drain regions

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052450A1 (en) * 1980-10-29 1982-05-26 Fujitsu Limited Method of manufacturing a semiconductor device with polycrystalline semiconductor cum metal electrodes
GB2179792A (en) * 1985-08-28 1987-03-11 Mitsubishi Electric Corp Bipolar transistor
EP0252206A2 (en) * 1986-07-09 1988-01-13 Hitachi, Ltd. Method of fabricating semiconductor structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052450A1 (en) * 1980-10-29 1982-05-26 Fujitsu Limited Method of manufacturing a semiconductor device with polycrystalline semiconductor cum metal electrodes
GB2179792A (en) * 1985-08-28 1987-03-11 Mitsubishi Electric Corp Bipolar transistor
EP0252206A2 (en) * 1986-07-09 1988-01-13 Hitachi, Ltd. Method of fabricating semiconductor structure

Also Published As

Publication number Publication date
GB2193036A (en) 1988-01-27
GB8717473D0 (en) 1987-08-26

Similar Documents

Publication Publication Date Title
HK84188A (en) Process of fabricating a semiconductor integrated circuit device
EP0252206A3 (en) Method of fabricating semiconductor device
EP0270067A3 (en) Method of making a semiconductor device comprising at least two semiconductor chips
GB2128024B (en) Method of manufacturing semiconductor integrated circuit device
MY8700804A (en) A semiconductor integrated circuit device and method of manufacturing the same
GB2163901B (en) A semiconductor integrated circuit device and a process for manufacturing such a device
HK1014293A1 (en) A method of manufacturing a semiconductor device
EP0345875A3 (en) A method of manufacturing a semiconductor device
EP0435187A3 (en) Method of fabricating a semiconductor device
HK27996A (en) A method of producing a semiconductor integrated circuit device
EP0242744A3 (en) Method of manufacturing an integrated circuit semiconductor device comprising a lithography step
GB2159326B (en) A semiconductor integrated circuit device and method of production thereof
EP0405659A3 (en) A method of manufacturing a semiconductor device
EP0425037A3 (en) A method of manufacturing a semiconductor device
GB8921262D0 (en) A method of manufacturing a semiconductor device
KR900008623B1 (en) Method of producing a semiconductor device
EP0294888A3 (en) A method of manufacturing a semiconductor device
EP0405660A3 (en) A method of manufacturing a semiconductor device
GB2157495B (en) A method of producing a semiconductor integrated circuit device
GB2190241B (en) Method of making a semiconductor device
KR950010052B1 (en) Method of manufacturing a semiconductor device
GB2193036B (en) Method of fabricating a semiconductor integrated circuit device
GB8907610D0 (en) A method of manufacturing a semiconductor device
GB9013153D0 (en) A method of manufacturing a semiconductor device
GB9013037D0 (en) A method of manufacturing a semiconductor device

Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19950810

PE20 Patent expired after termination of 20 years

Effective date: 20070722