HK1222475A1 - 等離子體反應器容器和組件、和執行等離子體處理的方法 - Google Patents

等離子體反應器容器和組件、和執行等離子體處理的方法

Info

Publication number
HK1222475A1
HK1222475A1 HK16110626.3A HK16110626A HK1222475A1 HK 1222475 A1 HK1222475 A1 HK 1222475A1 HK 16110626 A HK16110626 A HK 16110626A HK 1222475 A1 HK1222475 A1 HK 1222475A1
Authority
HK
Hong Kong
Prior art keywords
assembly
reactor vessel
plasma processing
plasma
plasma reactor
Prior art date
Application number
HK16110626.3A
Other languages
English (en)
Inventor
Omid Reza Shojaei
Jacques Schmitt
Fabrice Jeanneret
Original Assignee
Indeotec Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Indeotec Sa filed Critical Indeotec Sa
Publication of HK1222475A1 publication Critical patent/HK1222475A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32889—Connection or combination with other apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
HK16110626.3A 2013-09-27 2016-09-07 等離子體反應器容器和組件、和執行等離子體處理的方法 HK1222475A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13186529.7A EP2854155B1 (en) 2013-09-27 2013-09-27 Plasma reactor vessel and assembly, and a method of performing plasma processing
PCT/EP2014/070542 WO2015044295A1 (en) 2013-09-27 2014-09-25 Plasma reactor vessel and assembly, and a method of performing plasma processing

Publications (1)

Publication Number Publication Date
HK1222475A1 true HK1222475A1 (zh) 2017-06-30

Family

ID=49237126

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16110626.3A HK1222475A1 (zh) 2013-09-27 2016-09-07 等離子體反應器容器和組件、和執行等離子體處理的方法

Country Status (8)

Country Link
US (1) US10658159B2 (zh)
EP (1) EP2854155B1 (zh)
JP (1) JP6433502B2 (zh)
KR (1) KR102100315B1 (zh)
CN (1) CN105593968B (zh)
HK (1) HK1222475A1 (zh)
MY (1) MY178798A (zh)
WO (1) WO2015044295A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210391146A1 (en) * 2020-06-11 2021-12-16 Applied Materials, Inc. Rf frequency control and ground path return in semiconductor process chambers

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JP2740284B2 (ja) 1989-08-09 1998-04-15 三洋電機株式会社 光起電力素子
JPH08505437A (ja) * 1992-12-30 1996-06-11 ナウチノ−プロイズボドストヴェノーエ・プレドプリェティエ・“ノヴァテク” 下地の真空プラズマ処理のための装置
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
JP3238082B2 (ja) * 1996-05-16 2001-12-10 シャープ株式会社 電子デバイス製造装置
US5981899A (en) * 1997-01-17 1999-11-09 Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor
DE69811511T2 (de) 1997-03-21 2004-02-19 Sanyo Electric Co., Ltd., Moriguchi Herstellungsverfahren für ein photovoltaisches bauelement
JP3402129B2 (ja) * 1997-07-10 2003-04-28 松下電器産業株式会社 基板のドライエッチング装置
WO2002073654A1 (en) * 2001-03-13 2002-09-19 Applied Materials, Inc. Plasma chamber support having dual electrodes
DE10261362B8 (de) * 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrat-Halter
KR100897176B1 (ko) * 2005-07-20 2009-05-14 삼성모바일디스플레이주식회사 유도 결합형 플라즈마 처리 장치
JP4756361B2 (ja) * 2006-07-10 2011-08-24 株式会社デンソー 回転力伝達装置
KR20080020722A (ko) * 2006-08-24 2008-03-06 세메스 주식회사 플라즈마 처리 장치 및 이를 이용한 기판의 처리 방법
JP4622972B2 (ja) * 2006-09-12 2011-02-02 セイコーエプソン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5349341B2 (ja) * 2007-03-16 2013-11-20 ソースル シーオー エルティディー プラズマ処理装置及びプラズマ処理方法
CN101919041B (zh) * 2008-01-16 2013-03-27 索绍股份有限公司 衬底固持器，衬底支撑设备，衬底处理设备以及使用所述衬底处理设备的衬底处理方法
US8357264B2 (en) * 2008-05-29 2013-01-22 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
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JP5563347B2 (ja) * 2010-03-30 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置及び半導体装置の製造方法
JP5719599B2 (ja) * 2011-01-07 2015-05-20 東京エレクトロン株式会社 基板処理装置
JP5840095B2 (ja) * 2011-10-31 2016-01-06 三菱電機株式会社 太陽電池の製造装置、及び太陽電池の製造方法
JP2014532813A (ja) * 2011-11-04 2014-12-08 インテヴァック インコーポレイテッド 線走査スパッタリングシステムおよび線走査スパッタリング方法
JP5996276B2 (ja) * 2012-05-31 2016-09-21 京セラ株式会社 静電チャック、吸着方法及び吸着装置

Also Published As

Publication number Publication date
KR102100315B1 (ko) 2020-04-14
JP2016541101A (ja) 2016-12-28
US20160196959A1 (en) 2016-07-07
WO2015044295A1 (en) 2015-04-02
KR20160058894A (ko) 2016-05-25
EP2854155B1 (en) 2017-11-08
MY178798A (en) 2020-10-20
JP6433502B2 (ja) 2018-12-05
EP2854155A1 (en) 2015-04-01
US10658159B2 (en) 2020-05-19
CN105593968A (zh) 2016-05-18
CN105593968B (zh) 2017-10-27

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