HK1214407A1 - Led元件及其制造方法 - Google Patents

Led元件及其制造方法 Download PDF

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Publication number
HK1214407A1
HK1214407A1 HK16102139.0A HK16102139A HK1214407A1 HK 1214407 A1 HK1214407 A1 HK 1214407A1 HK 16102139 A HK16102139 A HK 16102139A HK 1214407 A1 HK1214407 A1 HK 1214407A1
Authority
HK
Hong Kong
Prior art keywords
light
layer
moth
sapphire substrate
eye
Prior art date
Application number
HK16102139.0A
Other languages
English (en)
Chinese (zh)
Inventor
北野司森美登里近藤俊行鈴木敦志難波江宏大矢昌輝
北野司
森美登里
近藤俊行
铃木敦志
难波江宏一
大矢昌辉
Original Assignee
崇高种子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 崇高种子公司 filed Critical 崇高种子公司
Publication of HK1214407A1 publication Critical patent/HK1214407A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
HK16102139.0A 2013-04-16 2014-04-15 Led元件及其制造方法 HK1214407A1 (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2013-086049 2013-04-16
JP2013086051 2013-04-16
JP2013-086050 2013-04-16
JP2013086049 2013-04-16
JP2013-086051 2013-04-16
JP2013086050 2013-04-16
PCT/JP2014/060763 WO2014171467A1 (ja) 2013-04-16 2014-04-15 Ｌｅｄ素子及びその製造方法

Publications (1)

Publication Number Publication Date
HK1214407A1 true HK1214407A1 (zh) 2016-07-22

Family

ID=51731404

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16102139.0A HK1214407A1 (zh) 2013-04-16 2014-04-15 Led元件及其制造方法

Country Status (5)

Country Link
US (2) US9793434B2 (enExample)
JP (3) JP5643920B1 (enExample)
CN (1) CN105264676A (enExample)
HK (1) HK1214407A1 (enExample)
WO (1) WO2014171467A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3026716B1 (en) * 2013-07-30 2020-12-16 National Institute of Information and Communications Technology Semiconductor light emitting element and method for manufacturing same
JP6436694B2 (ja) * 2014-09-17 2018-12-12 住友化学株式会社 窒化物半導体テンプレートの製造方法
DE102014116999B4 (de) * 2014-11-20 2025-09-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US20180248076A1 (en) * 2015-07-17 2018-08-30 Scivax Corporation Light emitting device
JP6524904B2 (ja) 2015-12-22 2019-06-05 日亜化学工業株式会社 発光装置
JP2017175004A (ja) * 2016-03-24 2017-09-28 ソニー株式会社 チップサイズパッケージ、製造方法、電子機器、および内視鏡
CN106299085B (zh) * 2016-09-21 2019-04-30 海迪科（南通）光电科技有限公司 一种偏振发光二极管芯片
WO2018096571A1 (ja) * 2016-11-22 2018-05-31 国立研究開発法人情報通信研究機構 深紫外光を放射する半導体発光素子を備える発光モジュール
JP6608352B2 (ja) * 2016-12-20 2019-11-20 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
JP6841198B2 (ja) * 2017-09-28 2021-03-10 豊田合成株式会社 発光素子の製造方法
US10304993B1 (en) * 2018-01-05 2019-05-28 Epistar Corporation Light-emitting device and method of manufacturing the same
KR102443027B1 (ko) 2018-03-02 2022-09-14 삼성전자주식회사 반도체 발광소자
CN108447404B (zh) * 2018-04-04 2021-10-26 京东方科技集团股份有限公司 柔性阵列基板、显示装置及柔性阵列基板的制造方法
CN109599469A (zh) * 2018-12-18 2019-04-09 华中科技大学鄂州工业技术研究院 蛾眼结构深紫外发光二极管及制备方法
JP7738851B2 (ja) * 2021-11-24 2025-09-16 国立大学法人京都大学 発光ダイオード素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220972A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
JP4637781B2 (ja) * 2006-03-31 2011-02-23 昭和電工株式会社 ＧａＮ系半導体発光素子の製造方法
JP5082752B2 (ja) 2006-12-21 2012-11-28 日亜化学工業株式会社 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子
JP5379434B2 (ja) 2008-09-22 2013-12-25 学校法人 名城大学 発光素子用サファイア基板の製造方法
US8941136B2 (en) 2009-09-07 2015-01-27 El-Seed Corporation Semiconductor light emitting element
JP5477084B2 (ja) * 2010-03-17 2014-04-23 豊田合成株式会社 半導体発光素子およびその製造方法、ランプ、電子機器、機械装置
JP5142236B1 (ja) * 2011-11-15 2013-02-13 エルシード株式会社 エッチング方法

Also Published As

Publication number Publication date
US20160149076A1 (en) 2016-05-26
US20180026154A1 (en) 2018-01-25
CN105264676A (zh) 2016-01-20
JP5643920B1 (ja) 2014-12-17
WO2014171467A1 (ja) 2014-10-23
JP2015119202A (ja) 2015-06-25
JP2015029118A (ja) 2015-02-12
JP5728116B2 (ja) 2015-06-03
JPWO2014171467A1 (ja) 2017-02-23
US9793434B2 (en) 2017-10-17

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