JP5643920B1 - Ｌｅｄ素子及びその製造方法 - Google Patents

Ｌｅｄ素子及びその製造方法 Download PDF

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Publication number
JP5643920B1
JP5643920B1 JP2014531040A JP2014531040A JP5643920B1 JP 5643920 B1 JP5643920 B1 JP 5643920B1 JP 2014531040 A JP2014531040 A JP 2014531040A JP 2014531040 A JP2014531040 A JP 2014531040A JP 5643920 B1 JP5643920 B1 JP 5643920B1
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layer
light
moth
sapphire substrate
eye
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Expired - Fee Related
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JP2014531040A
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English (en)
Japanese (ja)
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JPWO2014171467A1 (ja
Inventor
司 北野
司 北野
森　みどり
みどり 森
近藤　俊行
俊行 近藤
敦志 鈴木
敦志 鈴木
宏一 難波江
宏一 難波江
昌輝 大矢
昌輝 大矢
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EL Seed Corp
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EL Seed Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Devices (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP2014531040A 2013-04-16 2014-04-15 Ｌｅｄ素子及びその製造方法 Expired - Fee Related JP5643920B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014531040A JP5643920B1 (ja) 2013-04-16 2014-04-15 Ｌｅｄ素子及びその製造方法

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2013086051 2013-04-16
JP2013086051 2013-04-16
JP2013086049 2013-04-16
JP2013086050 2013-04-16
JP2013086050 2013-04-16
JP2013086049 2013-04-16
JP2014531040A JP5643920B1 (ja) 2013-04-16 2014-04-15 Ｌｅｄ素子及びその製造方法
PCT/JP2014/060763 WO2014171467A1 (ja) 2013-04-16 2014-04-15 Ｌｅｄ素子及びその製造方法

Related Child Applications (1)

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JP2014181167A Division JP5728116B2 (ja) 2013-04-16 2014-09-05 Ｌｅｄ素子及びその製造方法

Publications (2)

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JP5643920B1 true JP5643920B1 (ja) 2014-12-17
JPWO2014171467A1 JPWO2014171467A1 (ja) 2017-02-23

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JP2014531040A Expired - Fee Related JP5643920B1 (ja) 2013-04-16 2014-04-15 Ｌｅｄ素子及びその製造方法
JP2014181167A Active JP5728116B2 (ja) 2013-04-16 2014-09-05 Ｌｅｄ素子及びその製造方法
JP2015065738A Withdrawn JP2015119202A (ja) 2013-04-16 2015-03-27 Ｌｅｄ素子及びその製造方法

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JP2014181167A Active JP5728116B2 (ja) 2013-04-16 2014-09-05 Ｌｅｄ素子及びその製造方法
JP2015065738A Withdrawn JP2015119202A (ja) 2013-04-16 2015-03-27 Ｌｅｄ素子及びその製造方法

Country Status (5)

Country Link
US (2) US9793434B2 (enExample)
JP (3) JP5643920B1 (enExample)
CN (1) CN105264676A (enExample)
HK (1) HK1214407A1 (enExample)
WO (1) WO2014171467A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3026716B1 (en) * 2013-07-30 2020-12-16 National Institute of Information and Communications Technology Semiconductor light emitting element and method for manufacturing same
JP6436694B2 (ja) * 2014-09-17 2018-12-12 住友化学株式会社 窒化物半導体テンプレートの製造方法
DE102014116999B4 (de) * 2014-11-20 2025-09-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US20180248076A1 (en) * 2015-07-17 2018-08-30 Scivax Corporation Light emitting device
JP6524904B2 (ja) 2015-12-22 2019-06-05 日亜化学工業株式会社 発光装置
JP2017175004A (ja) * 2016-03-24 2017-09-28 ソニー株式会社 チップサイズパッケージ、製造方法、電子機器、および内視鏡
CN106299085B (zh) * 2016-09-21 2019-04-30 海迪科（南通）光电科技有限公司 一种偏振发光二极管芯片
WO2018096571A1 (ja) * 2016-11-22 2018-05-31 国立研究開発法人情報通信研究機構 深紫外光を放射する半導体発光素子を備える発光モジュール
JP6608352B2 (ja) * 2016-12-20 2019-11-20 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
JP6841198B2 (ja) * 2017-09-28 2021-03-10 豊田合成株式会社 発光素子の製造方法
US10304993B1 (en) * 2018-01-05 2019-05-28 Epistar Corporation Light-emitting device and method of manufacturing the same
KR102443027B1 (ko) 2018-03-02 2022-09-14 삼성전자주식회사 반도체 발광소자
CN108447404B (zh) * 2018-04-04 2021-10-26 京东方科技集团股份有限公司 柔性阵列基板、显示装置及柔性阵列基板的制造方法
CN109599469A (zh) * 2018-12-18 2019-04-09 华中科技大学鄂州工业技术研究院 蛾眼结构深紫外发光二极管及制备方法
JP7738851B2 (ja) * 2021-11-24 2025-09-16 国立大学法人京都大学 発光ダイオード素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177528A (ja) * 2006-12-21 2008-07-31 Nichia Chem Ind Ltd 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子
JP2010074090A (ja) * 2008-09-22 2010-04-02 Meijo Univ 発光素子、発光素子用サファイア基板及び発光素子用サファイア基板の製造方法
WO2011027679A1 (ja) * 2009-09-07 2011-03-10 エルシード株式会社 半導体発光素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220972A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
JP4637781B2 (ja) * 2006-03-31 2011-02-23 昭和電工株式会社 ＧａＮ系半導体発光素子の製造方法
JP5477084B2 (ja) * 2010-03-17 2014-04-23 豊田合成株式会社 半導体発光素子およびその製造方法、ランプ、電子機器、機械装置
JP5142236B1 (ja) * 2011-11-15 2013-02-13 エルシード株式会社 エッチング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177528A (ja) * 2006-12-21 2008-07-31 Nichia Chem Ind Ltd 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子
JP2010074090A (ja) * 2008-09-22 2010-04-02 Meijo Univ 発光素子、発光素子用サファイア基板及び発光素子用サファイア基板の製造方法
WO2011027679A1 (ja) * 2009-09-07 2011-03-10 エルシード株式会社 半導体発光素子

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Publication number Publication date
US20160149076A1 (en) 2016-05-26
HK1214407A1 (zh) 2016-07-22
US20180026154A1 (en) 2018-01-25
CN105264676A (zh) 2016-01-20
WO2014171467A1 (ja) 2014-10-23
JP2015119202A (ja) 2015-06-25
JP2015029118A (ja) 2015-02-12
JP5728116B2 (ja) 2015-06-03
JPWO2014171467A1 (ja) 2017-02-23
US9793434B2 (en) 2017-10-17

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