HK1210629A1 - Plasma device, carbon thin film manufacturing method and coating method using plasma device - Google Patents

Plasma device, carbon thin film manufacturing method and coating method using plasma device Download PDF

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Publication number
HK1210629A1
HK1210629A1 HK15111277.4A HK15111277A HK1210629A1 HK 1210629 A1 HK1210629 A1 HK 1210629A1 HK 15111277 A HK15111277 A HK 15111277A HK 1210629 A1 HK1210629 A1 HK 1210629A1
Authority
HK
Hong Kong
Prior art keywords
cathode member
arc
plasma apparatus
plasma
discharge
Prior art date
Application number
HK15111277.4A
Other languages
English (en)
Chinese (zh)
Inventor
Kenji Kato
Masato Takahashi
Qi Sun
Takashi Mikami
Toshihiro Miyazaki
Original Assignee
Nissin Denki Kabushiki Kaisha (Nissin Electric Co., Ltd.)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Denki Kabushiki Kaisha (Nissin Electric Co., Ltd.) filed Critical Nissin Denki Kabushiki Kaisha (Nissin Electric Co., Ltd.)
Publication of HK1210629A1 publication Critical patent/HK1210629A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Plasma Technology (AREA)
HK15111277.4A 2013-01-22 2014-01-21 Plasma device, carbon thin film manufacturing method and coating method using plasma device HK1210629A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013-009363 2013-01-22
JP2013009363 2013-01-22
JP2013-010820 2013-01-24
JP2013010820 2013-01-24
PCT/JP2014/051141 WO2014115733A1 (ja) 2013-01-22 2014-01-21 プラズマ装置、それを用いたカーボン薄膜の製造方法およびコーティング方法

Publications (1)

Publication Number Publication Date
HK1210629A1 true HK1210629A1 (en) 2016-04-29

Family

ID=51227524

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15111277.4A HK1210629A1 (en) 2013-01-22 2014-01-21 Plasma device, carbon thin film manufacturing method and coating method using plasma device

Country Status (8)

Country Link
US (1) US20150371833A1 (enExample)
EP (1) EP2949779A4 (enExample)
JP (2) JP5954440B2 (enExample)
KR (1) KR20150133179A (enExample)
CN (1) CN104937132B (enExample)
HK (1) HK1210629A1 (enExample)
SG (1) SG11201505685SA (enExample)
WO (1) WO2014115733A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017438A1 (ja) * 2014-07-28 2016-02-04 日本アイ・ティ・エフ株式会社 カーボン薄膜、それを製造するプラズマ装置および製造方法
JP2016195035A (ja) * 2015-03-31 2016-11-17 ウシオ電機株式会社 極端紫外光光源装置
US12084777B2 (en) 2017-09-25 2024-09-10 Sumitomo Electric Industries, Ltd. Method for manufacturing hard carbon-based coating, and member provided with coating
CN115135439B (zh) * 2020-04-24 2025-08-12 住友电工硬质合金株式会社 切削工具
WO2022029962A1 (ja) * 2020-08-06 2022-02-10 日本アイ・ティ・エフ株式会社 真空アーク蒸着装置
CN112133619B (zh) * 2020-09-22 2023-06-23 重庆臻宝科技股份有限公司 下部电极塑封夹具及塑封工艺
WO2022254611A1 (ja) * 2021-06-02 2022-12-08 住友電工ハードメタル株式会社 切削工具
DE102021128160B3 (de) * 2021-10-28 2023-01-05 Joachim Richter Systeme und Maschinen GmbH & Co. KG Vorrichtung und Verfahren zum Herstellen einer Graphenschicht
WO2025243543A1 (ja) * 2024-05-24 2025-11-27 国立大学法人豊橋技術科学大学 真空アーク放電発生装置における陰極および真空アーク放電発生装置

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US3836451A (en) * 1968-12-26 1974-09-17 A Snaper Arc deposition apparatus
US4673477A (en) * 1984-03-02 1987-06-16 Regents Of The University Of Minnesota Controlled vacuum arc material deposition, method and apparatus
ATE146010T1 (de) * 1990-03-01 1996-12-15 Balzers Hochvakuum Vorrichtung und verfahren zum verdampfen von material im vakuum sowie anwendung des verfahrens
US5269898A (en) * 1991-03-20 1993-12-14 Vapor Technologies, Inc. Apparatus and method for coating a substrate using vacuum arc evaporation
US5401543A (en) * 1993-11-09 1995-03-28 Minnesota Mining And Manufacturing Company Method for forming macroparticle-free DLC films by cathodic arc discharge
GB9722649D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source for metallic and dielectric coatings
JP2000212729A (ja) * 1999-01-22 2000-08-02 Kobe Steel Ltd 真空ア―ク蒸着装置
JP2002105628A (ja) 2000-10-03 2002-04-10 Nissin Electric Co Ltd 真空アーク蒸着装置
JP2003003251A (ja) * 2001-06-20 2003-01-08 Olympus Optical Co Ltd 薄膜形成方法及び薄膜形成装置並びに蒸着源
JP2003183816A (ja) * 2001-12-13 2003-07-03 Ulvac Japan Ltd 同軸型真空アーク蒸着源
JP4034563B2 (ja) * 2001-12-27 2008-01-16 株式会社神戸製鋼所 真空アーク蒸発源
JP4109503B2 (ja) * 2002-07-22 2008-07-02 日新電機株式会社 真空アーク蒸着装置
JP2006111930A (ja) * 2004-10-15 2006-04-27 Nissin Electric Co Ltd 成膜装置
JP4859523B2 (ja) * 2006-05-09 2012-01-25 スタンレー電気株式会社 プラズマ源、成膜装置および膜の製造方法
JP2007126754A (ja) * 2006-12-21 2007-05-24 Nissin Electric Co Ltd 真空アーク蒸着装置
JP5063143B2 (ja) * 2007-03-02 2012-10-31 株式会社リケン アーク式蒸発源
GB2450933A (en) * 2007-07-13 2009-01-14 Hauzer Techno Coating Bv Method of providing a hard coating
US8114256B2 (en) * 2007-11-30 2012-02-14 Applied Materials, Inc. Control of arbitrary scan path of a rotating magnetron
JP4985490B2 (ja) * 2008-03-12 2012-07-25 日新電機株式会社 成膜装置
JP2009283107A (ja) * 2008-05-26 2009-12-03 Fuji Electric Device Technology Co Ltd テトラヘドラル・アモルファス・カーボン膜を主体とする保護膜および該保護膜を有する磁気記録媒体
JP5649308B2 (ja) * 2009-04-28 2015-01-07 株式会社神戸製鋼所 成膜速度が速いアーク式蒸発源及びこのアーク式蒸発源を用いた皮膜の製造方法
WO2013015280A1 (ja) * 2011-07-26 2013-01-31 日新電機株式会社 プラズマ装置およびそれを用いたカーボン薄膜の製造方法

Also Published As

Publication number Publication date
WO2014115733A1 (ja) 2014-07-31
SG11201505685SA (en) 2015-09-29
JP2016172927A (ja) 2016-09-29
JPWO2014115733A1 (ja) 2017-01-26
JP6460034B2 (ja) 2019-01-30
EP2949779A4 (en) 2016-10-05
CN104937132A (zh) 2015-09-23
JP5954440B2 (ja) 2016-07-20
EP2949779A1 (en) 2015-12-02
KR20150133179A (ko) 2015-11-27
CN104937132B (zh) 2017-10-24
US20150371833A1 (en) 2015-12-24

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