HK1134059A1 - Wet processing using a fluid meniscus, apparatus and method - Google Patents

Wet processing using a fluid meniscus, apparatus and method

Info

Publication number
HK1134059A1
HK1134059A1 HK09111590.2A HK09111590A HK1134059A1 HK 1134059 A1 HK1134059 A1 HK 1134059A1 HK 09111590 A HK09111590 A HK 09111590A HK 1134059 A1 HK1134059 A1 HK 1134059A1
Authority
HK
Hong Kong
Prior art keywords
wet processing
fluid meniscus
meniscus
fluid
wet
Prior art date
Application number
HK09111590.2A
Other languages
English (en)
Inventor
Ricrdo I Fuentes
Original Assignee
Materials And Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials And Technologies Corp filed Critical Materials And Technologies Corp
Publication of HK1134059A1 publication Critical patent/HK1134059A1/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/161Process or apparatus coating on selected surface areas by direct patterning from plating step, e.g. inkjet
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Electroplating Methods And Accessories (AREA)
  • ing And Chemical Polishing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
  • Chemically Coating (AREA)
HK09111590.2A 2006-10-16 2009-12-10 Wet processing using a fluid meniscus, apparatus and method HK1134059A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/US2006/040732 WO2008048259A2 (en) 2006-10-16 2006-10-16 Wet processing using a fluid meniscus, apparatus and method
US11/582,195 US8852383B2 (en) 1999-09-29 2006-10-16 Wet processing using a fluid meniscus apparatus

Publications (1)

Publication Number Publication Date
HK1134059A1 true HK1134059A1 (en) 2010-04-16

Family

ID=39314523

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09111590.2A HK1134059A1 (en) 2006-10-16 2009-12-10 Wet processing using a fluid meniscus, apparatus and method

Country Status (9)

Country Link
US (1) US8852383B2 (da)
EP (1) EP2073939B1 (da)
JP (3) JP2010507226A (da)
CN (1) CN101541438B (da)
CA (1) CA2663325A1 (da)
DK (1) DK2073939T3 (da)
ES (1) ES2394167T3 (da)
HK (1) HK1134059A1 (da)
WO (1) WO2008048259A2 (da)

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CN101541438B (zh) * 2006-10-16 2013-08-21 材料及技术公司 使用流体弯液面湿加工的设备及方法
JP5276420B2 (ja) 2008-01-31 2013-08-28 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
WO2009105758A1 (en) * 2008-02-22 2009-08-27 Materials And Technologies Corporation Single-sided high throughput wet etching and wet processing apparatus and method
US20110027458A1 (en) * 2009-07-02 2011-02-03 Dexcom, Inc. Continuous analyte sensors and methods of making same
JP5153750B2 (ja) * 2009-10-09 2013-02-27 三菱電機株式会社 基板表面処理装置、太陽電池セルの製造装置
ITMI20100407A1 (it) * 2010-03-12 2011-09-13 Rise Technology S R L Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto
DE102011081980B4 (de) 2011-09-01 2023-07-06 Gebr. Schmid Gmbh & Co. Vorrichtung zum Benetzen von flachen Substraten und Anlage mit einer solchen Vorrichtung
CN105592944B (zh) * 2013-07-29 2018-05-11 贝克太阳能有限公司 对基板进行的空间有限的加工
WO2016179023A1 (en) * 2015-05-01 2016-11-10 Adarza Biosystems, Inc. Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings
KR101860019B1 (ko) * 2015-07-30 2018-05-23 한국과학기술연구원 그래핀 습식 전사를 위한 장치 및 방법
JP2018049199A (ja) * 2016-09-23 2018-03-29 Hoya株式会社 局所ウェットエッチング装置及びフォトマスク用基板の製造方法
CN108892099B (zh) * 2018-06-25 2021-03-16 武汉大学 一种压印超薄材料制备均匀表面微结构的方法

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JPS62188322A (ja) 1986-02-14 1987-08-17 Hitachi Micro Comput Eng Ltd 洗浄装置
JPH03272140A (ja) 1990-03-22 1991-12-03 Fujitsu Ltd 半導体基板の薬品処理装置
JPH04253332A (ja) * 1991-01-28 1992-09-09 Toshiba Corp 半導体ウェーハ処理装置
US5339842A (en) * 1992-12-18 1994-08-23 Specialty Coating Systems, Inc. Methods and apparatus for cleaning objects
US5270079A (en) * 1992-12-18 1993-12-14 Specialty Coatings Systems, Inc. Methods of meniscus coating
KR100262902B1 (ko) * 1994-08-31 2000-09-01 다카시마 히로시 현상처리장치 및 현상처리방법
JP3198377B2 (ja) 1994-08-31 2001-08-13 東京エレクトロン株式会社 処理方法及び処理装置
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JP3511441B2 (ja) * 1996-11-29 2004-03-29 忠弘 大見 洗浄やエッチング、現像、剥離等を含むウエット処理に用いる省液型の液体供給ノズル、ウエット処理装置及びウエット処理方法
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JP4943448B2 (ja) * 2005-11-23 2012-05-30 マテリアルズ・アンド・テクノロジーズ・コーポレーション 基板を保持するための装置及び方法
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CN101541438B (zh) * 2006-10-16 2013-08-21 材料及技术公司 使用流体弯液面湿加工的设备及方法
JP4799464B2 (ja) * 2007-03-29 2011-10-26 大日本スクリーン製造株式会社 基板処理装置
WO2009105758A1 (en) * 2008-02-22 2009-08-27 Materials And Technologies Corporation Single-sided high throughput wet etching and wet processing apparatus and method
JP2013190334A (ja) * 2012-03-14 2013-09-26 Taiyo Yuden Co Ltd 判定方法、検査装置及び検査システム

Also Published As

Publication number Publication date
WO2008048259A3 (en) 2009-04-23
WO2008048259A2 (en) 2008-04-24
EP2073939A2 (en) 2009-07-01
EP2073939A4 (en) 2011-07-13
CN101541438A (zh) 2009-09-23
JP2010507226A (ja) 2010-03-04
US20070084560A1 (en) 2007-04-19
EP2073939B1 (en) 2012-08-08
CA2663325A1 (en) 2008-04-24
JP2015195411A (ja) 2015-11-05
ES2394167T3 (es) 2013-01-23
US8852383B2 (en) 2014-10-07
JP2014007423A (ja) 2014-01-16
CN101541438B (zh) 2013-08-21
DK2073939T3 (da) 2012-10-22

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20171016