HK1134059A1 - Wet processing using a fluid meniscus, apparatus and method - Google Patents

Wet processing using a fluid meniscus, apparatus and method

Info

Publication number
HK1134059A1
HK1134059A1 HK09111590.2A HK09111590A HK1134059A1 HK 1134059 A1 HK1134059 A1 HK 1134059A1 HK 09111590 A HK09111590 A HK 09111590A HK 1134059 A1 HK1134059 A1 HK 1134059A1
Authority
HK
Hong Kong
Prior art keywords
wet processing
fluid meniscus
meniscus
fluid
wet
Prior art date
Application number
HK09111590.2A
Other languages
English (en)
Inventor
Ricrdo I Fuentes
Original Assignee
Materials And Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials And Technologies Corp filed Critical Materials And Technologies Corp
Publication of HK1134059A1 publication Critical patent/HK1134059A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/161—Process or apparatus coating on selected surface areas by direct patterning from plating step, e.g. inkjet
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Electroplating Methods And Accessories (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemically Coating (AREA)
  • Micromachines (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
HK09111590.2A 2006-10-16 2009-12-10 Wet processing using a fluid meniscus, apparatus and method HK1134059A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/582,195 US8852383B2 (en) 1999-09-29 2006-10-16 Wet processing using a fluid meniscus apparatus
PCT/US2006/040732 WO2008048259A2 (en) 2006-10-16 2006-10-16 Wet processing using a fluid meniscus, apparatus and method

Publications (1)

Publication Number Publication Date
HK1134059A1 true HK1134059A1 (en) 2010-04-16

Family

ID=39314523

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09111590.2A HK1134059A1 (en) 2006-10-16 2009-12-10 Wet processing using a fluid meniscus, apparatus and method

Country Status (9)

Country Link
US (1) US8852383B2 (xx)
EP (1) EP2073939B1 (xx)
JP (3) JP2010507226A (xx)
CN (1) CN101541438B (xx)
CA (1) CA2663325A1 (xx)
DK (1) DK2073939T3 (xx)
ES (1) ES2394167T3 (xx)
HK (1) HK1134059A1 (xx)
WO (1) WO2008048259A2 (xx)

Families Citing this family (12)

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ES2394167T3 (es) * 2006-10-16 2013-01-23 Materials And Technologies Corporation Aparato de procesamiento húmedo usando un menisco de fluído
JP5276420B2 (ja) 2008-01-31 2013-08-28 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP5593233B2 (ja) * 2008-02-22 2014-09-17 マテリアルズ・アンド・テクノロジーズ・コーポレーション 片面式高スループットの湿式エッチングおよび湿式処理装置および方法
US20110027458A1 (en) * 2009-07-02 2011-02-03 Dexcom, Inc. Continuous analyte sensors and methods of making same
JP5153750B2 (ja) * 2009-10-09 2013-02-27 三菱電機株式会社 基板表面処理装置、太陽電池セルの製造装置
ITMI20100407A1 (it) * 2010-03-12 2011-09-13 Rise Technology S R L Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto
DE102011081980B4 (de) * 2011-09-01 2023-07-06 Gebr. Schmid Gmbh & Co. Vorrichtung zum Benetzen von flachen Substraten und Anlage mit einer solchen Vorrichtung
WO2015017331A1 (en) * 2013-07-29 2015-02-05 Baker Solar, Inc. Spatially limited processing of a substrate
WO2016179023A1 (en) * 2015-05-01 2016-11-10 Adarza Biosystems, Inc. Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings
KR101860019B1 (ko) * 2015-07-30 2018-05-23 한국과학기술연구원 그래핀 습식 전사를 위한 장치 및 방법
JP2018049199A (ja) * 2016-09-23 2018-03-29 Hoya株式会社 局所ウェットエッチング装置及びフォトマスク用基板の製造方法
CN108892099B (zh) * 2018-06-25 2021-03-16 武汉大学 一种压印超薄材料制备均匀表面微结构的方法

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US4590094A (en) * 1984-10-29 1986-05-20 International Business Machines Corporation Inverted apply using bubble dispense
JPS62188322A (ja) 1986-02-14 1987-08-17 Hitachi Micro Comput Eng Ltd 洗浄装置
JPH03272140A (ja) 1990-03-22 1991-12-03 Fujitsu Ltd 半導体基板の薬品処理装置
JPH04253332A (ja) * 1991-01-28 1992-09-09 Toshiba Corp 半導体ウェーハ処理装置
US5339842A (en) * 1992-12-18 1994-08-23 Specialty Coating Systems, Inc. Methods and apparatus for cleaning objects
US5270079A (en) * 1992-12-18 1993-12-14 Specialty Coatings Systems, Inc. Methods of meniscus coating
JP3198377B2 (ja) * 1994-08-31 2001-08-13 東京エレクトロン株式会社 処理方法及び処理装置
KR100262902B1 (ko) * 1994-08-31 2000-09-01 다카시마 히로시 현상처리장치 및 현상처리방법
US5660642A (en) * 1995-05-26 1997-08-26 The Regents Of The University Of California Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor
JPH1074724A (ja) 1996-08-30 1998-03-17 Hitachi Ltd 半導体集積回路装置の製造方法および製造装置
JP3511441B2 (ja) * 1996-11-29 2004-03-29 忠弘 大見 洗浄やエッチング、現像、剥離等を含むウエット処理に用いる省液型の液体供給ノズル、ウエット処理装置及びウエット処理方法
JP2000294527A (ja) 1999-04-01 2000-10-20 Nec Corp ウエハの処理方法及びその処理装置
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US8062471B2 (en) * 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
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US9011064B2 (en) * 2005-11-23 2015-04-21 Materials And Technologies Corporation Device and method for holding a substrate
US20070207106A1 (en) * 2006-03-06 2007-09-06 Sabelko Jobiah J Low molecular weight ampholytic polymers for personal care applications
US8198505B2 (en) 2006-07-12 2012-06-12 The Procter & Gamble Company Disposable absorbent articles comprising non-biopersistent inorganic vitreous microfibers
ES2394167T3 (es) * 2006-10-16 2013-01-23 Materials And Technologies Corporation Aparato de procesamiento húmedo usando un menisco de fluído
JP4799464B2 (ja) * 2007-03-29 2011-10-26 大日本スクリーン製造株式会社 基板処理装置
JP5593233B2 (ja) * 2008-02-22 2014-09-17 マテリアルズ・アンド・テクノロジーズ・コーポレーション 片面式高スループットの湿式エッチングおよび湿式処理装置および方法
JP2013190334A (ja) * 2012-03-14 2013-09-26 Taiyo Yuden Co Ltd 判定方法、検査装置及び検査システム

Also Published As

Publication number Publication date
US8852383B2 (en) 2014-10-07
JP2010507226A (ja) 2010-03-04
EP2073939A2 (en) 2009-07-01
ES2394167T3 (es) 2013-01-23
EP2073939A4 (en) 2011-07-13
JP2014007423A (ja) 2014-01-16
EP2073939B1 (en) 2012-08-08
CN101541438B (zh) 2013-08-21
DK2073939T3 (da) 2012-10-22
WO2008048259A2 (en) 2008-04-24
CN101541438A (zh) 2009-09-23
CA2663325A1 (en) 2008-04-24
WO2008048259A3 (en) 2009-04-23
JP2015195411A (ja) 2015-11-05
US20070084560A1 (en) 2007-04-19

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20171016