HK1132584A1 - Method for manufacturing semiconductor sensor device - Google Patents

Method for manufacturing semiconductor sensor device

Info

Publication number
HK1132584A1
HK1132584A1 HK09110058.9A HK09110058A HK1132584A1 HK 1132584 A1 HK1132584 A1 HK 1132584A1 HK 09110058 A HK09110058 A HK 09110058A HK 1132584 A1 HK1132584 A1 HK 1132584A1
Authority
HK
Hong Kong
Prior art keywords
sensor device
manufacturing semiconductor
semiconductor sensor
manufacturing
sensor
Prior art date
Application number
HK09110058.9A
Other languages
English (en)
Inventor
Takanori Aono
Ryoji Okada
Atsushi Kazama
Yoshiaki Takada
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006317972A external-priority patent/JP4548793B2/ja
Priority claimed from JP2007011473A external-priority patent/JP4548799B2/ja
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of HK1132584A1 publication Critical patent/HK1132584A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00873—Multistep processes for the separation of wafers into individual elements characterised by special arrangements of the devices, allowing an easier separation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
HK09110058.9A 2006-09-06 2009-10-29 Method for manufacturing semiconductor sensor device HK1132584A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006241089 2006-09-06
JP2006317972A JP4548793B2 (ja) 2006-09-06 2006-11-27 半導体センサー装置およびその製造方法
JP2007011473A JP4548799B2 (ja) 2007-01-22 2007-01-22 半導体センサー装置
PCT/JP2007/066552 WO2008029654A1 (en) 2006-09-06 2007-08-27 Semiconductor sensor device and method for manufacturing same

Publications (1)

Publication Number Publication Date
HK1132584A1 true HK1132584A1 (en) 2010-02-26

Family

ID=39157087

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09110058.9A HK1132584A1 (en) 2006-09-06 2009-10-29 Method for manufacturing semiconductor sensor device

Country Status (7)

Country Link
US (1) US8022433B2 (zh)
EP (1) EP2065929A4 (zh)
KR (1) KR101004574B1 (zh)
CN (1) CN101427365B (zh)
HK (1) HK1132584A1 (zh)
TW (1) TWI348020B (zh)
WO (1) WO2008029654A1 (zh)

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US8384168B2 (en) 2011-04-21 2013-02-26 Freescale Semiconductor, Inc. Sensor device with sealing structure
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TWI456201B (zh) * 2011-11-29 2014-10-11 Univ Chung Hua 無線式熱氣泡式加速儀及其製備方法
US9046546B2 (en) 2012-04-27 2015-06-02 Freescale Semiconductor Inc. Sensor device and related fabrication methods
JP6194624B2 (ja) * 2013-04-25 2017-09-13 ミツミ電機株式会社 物理量検出素子及び物理量検出装置
JP2015005597A (ja) * 2013-06-20 2015-01-08 日立オートモティブシステムズ株式会社 樹脂封止型センサ装置
DE102014105861B4 (de) * 2014-04-25 2015-11-05 Infineon Technologies Ag Sensorvorrichtung und Verfahren zum Herstellen einer Sensorvorrichtung
CN105826215B (zh) * 2015-01-09 2018-08-10 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
JP6417970B2 (ja) * 2015-01-28 2018-11-07 ミツミ電機株式会社 モジュール及びその製造方法
JP2016161472A (ja) * 2015-03-04 2016-09-05 セイコーエプソン株式会社 物理量センサーおよびその製造方法、電子機器、ならびに移動体
EP3578507B1 (en) * 2015-04-20 2022-10-12 SZ DJI Technology Co., Ltd. Systems and methods for thermally regulating sensor operation
KR102525345B1 (ko) * 2015-09-01 2023-04-25 삼성전자주식회사 반도체 칩
CN105300371B (zh) * 2015-12-02 2019-02-05 北京七维航测科技股份有限公司 抗冲击角速陀螺灌封工艺
JP6553587B2 (ja) * 2016-12-20 2019-07-31 Ｎｉｓｓｈａ株式会社 ガスセンサモジュール及びその製造方法
JP6815880B2 (ja) * 2017-01-25 2021-01-20 株式会社ディスコ 半導体パッケージの製造方法
JP6819338B2 (ja) * 2017-02-13 2021-01-27 セイコーエプソン株式会社 物理量検出装置および電子機器
TWI610403B (zh) * 2017-03-03 2018-01-01 矽品精密工業股份有限公司 基板結構及其製法與電子封裝件
JP7024349B2 (ja) * 2017-11-24 2022-02-24 セイコーエプソン株式会社 センサーユニット、センサーユニットの製造方法、慣性計測装置、電子機器、および移動体
FR3077284B1 (fr) 2018-01-30 2020-03-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede d'encapsulation d'un dispositif microelectronique, par des substrats fins ou ultrafins, facilement manipulables
JP7237666B2 (ja) * 2019-03-11 2023-03-13 セイコーインスツル株式会社 パッケージ及びパッケージの製造方法
CN109799026B (zh) * 2019-03-19 2021-12-17 中国电子科技集团公司第十三研究所 Mems压力传感器及制备方法
JPWO2021241628A1 (zh) * 2020-05-29 2021-12-02
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Also Published As

Publication number Publication date
EP2065929A1 (en) 2009-06-03
CN101427365A (zh) 2009-05-06
KR20080105097A (ko) 2008-12-03
CN101427365B (zh) 2011-06-15
EP2065929A4 (en) 2011-07-06
KR101004574B1 (ko) 2010-12-30
WO2008029654A1 (en) 2008-03-13
TW200821559A (en) 2008-05-16
US20090050990A1 (en) 2009-02-26
US8022433B2 (en) 2011-09-20
TWI348020B (en) 2011-09-01

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20160827