HK1129649A1 - Method and apparatus for treating silicon particle - Google Patents
Method and apparatus for treating silicon particleInfo
- Publication number
- HK1129649A1 HK1129649A1 HK09107584.8A HK09107584A HK1129649A1 HK 1129649 A1 HK1129649 A1 HK 1129649A1 HK 09107584 A HK09107584 A HK 09107584A HK 1129649 A1 HK1129649 A1 HK 1129649A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- silicon particle
- treating silicon
- treating
- particle
- silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D24/00—Filters comprising loose filtering material, i.e. filtering material without any binder between the individual particles or fibres thereof
- B01D24/38—Feed or discharge devices
- B01D24/44—Feed or discharge devices for discharging filter cake, e.g. chutes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
- Filtration Of Liquid (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006048905 | 2006-02-24 | ||
PCT/JP2006/308613 WO2007097046A1 (fr) | 2006-02-24 | 2006-04-25 | Procede et appareil de traitement de particule de silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1129649A1 true HK1129649A1 (en) | 2009-12-04 |
Family
ID=38437104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09107584.8A HK1129649A1 (en) | 2006-02-24 | 2009-08-18 | Method and apparatus for treating silicon particle |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090274596A1 (fr) |
JP (1) | JPWO2007097046A1 (fr) |
KR (1) | KR101323765B1 (fr) |
CN (1) | CN101426723B (fr) |
HK (1) | HK1129649A1 (fr) |
WO (1) | WO2007097046A1 (fr) |
Families Citing this family (11)
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---|---|---|---|---|
CN101855391B (zh) | 2007-10-03 | 2014-10-29 | 希里科材料公司 | 用于处理硅粉末来获得硅晶体的方法 |
CN101597095A (zh) * | 2008-06-05 | 2009-12-09 | 佳科太阳能硅(厦门)有限公司 | 湿法冶硅的废酸回收处理方法 |
KR100985861B1 (ko) * | 2008-09-24 | 2010-10-08 | 씨앤지하이테크 주식회사 | 반도체용 슬러리 공급장치 및 슬러리 공급방법 |
EP2382291A2 (fr) * | 2008-12-31 | 2011-11-02 | MEMC Singapore Pte. Ltd. | Procédés et appareil pour la récupération et la purification de silicium depuis une suspension de sciage |
JP2010207800A (ja) * | 2009-02-16 | 2010-09-24 | Kuraray Co Ltd | ろ過ユニットおよびこれを備えたろ過装置 |
US8309711B2 (en) * | 2009-08-07 | 2012-11-13 | Corn Products Development Inc. | Filtration of corn starch followed by washing and collection of the resultant corn starch cake |
JP2013189318A (ja) * | 2010-06-22 | 2013-09-26 | Sumco Corp | シリコン系太陽電池用原料の製造方法 |
KR101408245B1 (ko) * | 2012-11-20 | 2014-06-23 | 남서울대학교 산학협력단 | 폐오일 여과 시스템 클리닝 방법 |
JP2016198841A (ja) * | 2015-04-09 | 2016-12-01 | 株式会社クラレ | シリコン回収方法及びシリコン回収装置 |
EP3434646A1 (fr) * | 2017-07-25 | 2019-01-30 | Total Solar International | Procédé de recyclage de si-particles submicronique à partir d'un processus de production de tranche de si |
CN115193101B (zh) * | 2021-04-09 | 2024-02-13 | 中国矿业大学 | 一种线切冷却液回收方法 |
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-
2006
- 2006-04-25 JP JP2008501601A patent/JPWO2007097046A1/ja not_active Withdrawn
- 2006-04-25 WO PCT/JP2006/308613 patent/WO2007097046A1/fr active Application Filing
- 2006-04-25 US US12/280,169 patent/US20090274596A1/en not_active Abandoned
- 2006-04-25 CN CN2006800543209A patent/CN101426723B/zh not_active Expired - Fee Related
- 2006-04-25 KR KR1020087022682A patent/KR101323765B1/ko active IP Right Grant
-
2009
- 2009-08-18 HK HK09107584.8A patent/HK1129649A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20090274596A1 (en) | 2009-11-05 |
CN101426723B (zh) | 2011-12-14 |
JPWO2007097046A1 (ja) | 2009-07-09 |
KR101323765B1 (ko) | 2013-10-31 |
WO2007097046A1 (fr) | 2007-08-30 |
CN101426723A (zh) | 2009-05-06 |
KR20080104318A (ko) | 2008-12-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20190421 |