HK1128061A1 - Projection optical system, exposure device and method, mask and display manufacturing method - Google Patents

Projection optical system, exposure device and method, mask and display manufacturing method

Info

Publication number
HK1128061A1
HK1128061A1 HK09105342.5A HK09105342A HK1128061A1 HK 1128061 A1 HK1128061 A1 HK 1128061A1 HK 09105342 A HK09105342 A HK 09105342A HK 1128061 A1 HK1128061 A1 HK 1128061A1
Authority
HK
Hong Kong
Prior art keywords
optical system
projection optical
region
scanning direction
mask
Prior art date
Application number
HK09105342.5A
Other languages
English (en)
Inventor
Masato Kumazawa
Tatsuo Fukui
Original Assignee
Nikon Corp Kabushiki Kaisha Nikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp Kabushiki Kaisha Nikon filed Critical Nikon Corp Kabushiki Kaisha Nikon
Publication of HK1128061A1 publication Critical patent/HK1128061A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0804—Catadioptric systems using two curved mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
HK09105342.5A 2006-02-16 2009-06-16 Projection optical system, exposure device and method, mask and display manufacturing method HK1128061A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006039446 2006-02-16
JP2007014631 2007-01-25
PCT/JP2007/051974 WO2007094198A1 (ja) 2006-02-16 2007-02-06 投影光学系、露光装置、露光方法、ディスプレイの製造方法、マスク及びマスクの製造方法

Publications (1)

Publication Number Publication Date
HK1128061A1 true HK1128061A1 (en) 2009-10-16

Family

ID=38371384

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09105342.5A HK1128061A1 (en) 2006-02-16 2009-06-16 Projection optical system, exposure device and method, mask and display manufacturing method

Country Status (8)

Country Link
US (2) US8305556B2 (ja)
EP (1) EP1986220A4 (ja)
JP (2) JP5453806B2 (ja)
KR (1) KR101415411B1 (ja)
CN (2) CN101385123B (ja)
HK (1) HK1128061A1 (ja)
TW (1) TWI424287B (ja)
WO (1) WO2007094198A1 (ja)

Families Citing this family (10)

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US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US20080151365A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
DE602005003665T2 (de) 2004-05-17 2008-11-20 Carl Zeiss Smt Ag Katadioptrisches projektionsobjektiv mit zwischenbildern
US8917378B2 (en) 2007-12-20 2014-12-23 Nikon Corporation Exposure method, exposure apparatus, and method for producing device with plurality of projection optical systems and pattern having first partial pattern area and second partial area having overlaid area with first partial pattern area
JP5392549B2 (ja) * 2009-05-12 2014-01-22 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
WO2010131485A1 (ja) * 2009-05-15 2010-11-18 株式会社ニコン 移動体装置、用力伝達装置、及び露光装置、並びにデバイス製造方法
DE102009045217B3 (de) * 2009-09-30 2011-04-07 Carl Zeiss Smt Gmbh Katadioptrisches Projektionsobjektiv
US8461556B2 (en) * 2010-09-08 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Using beam blockers to perform a patterned implant of a workpiece
CN103246158B (zh) * 2012-02-14 2015-03-25 旺宏电子股份有限公司 掩模及其图案配置方法与曝光方法
DE102017105580A1 (de) * 2016-11-04 2018-05-09 Carl Zeiss Meditec Ag Operationsmikroskop

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JPS6442655A (en) * 1987-08-11 1989-02-14 Nec Corp Structure of reticle
JPH05161588A (ja) 1991-12-16 1993-06-29 Mitsubishi Electric Corp 食器洗浄機の水位検出装置
US6157497A (en) * 1993-06-30 2000-12-05 Nikon Corporation Exposure apparatus
US5729331A (en) 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
JP3348467B2 (ja) 1993-06-30 2002-11-20 株式会社ニコン 露光装置及び方法
JPH0766113A (ja) * 1993-08-31 1995-03-10 Sanyo Electric Co Ltd レチクル及び位置合わせ用バーニアの形成方法
JP3477838B2 (ja) * 1993-11-11 2003-12-10 株式会社ニコン 走査型露光装置及び露光方法
JP4132095B2 (ja) * 1995-03-14 2008-08-13 株式会社ニコン 走査型露光装置
DE19757074A1 (de) 1997-12-20 1999-06-24 Zeiss Carl Fa Projektionsbelichtungsanlage und Belichtungsverfahren
JP4110606B2 (ja) 1998-02-12 2008-07-02 株式会社ニコン 走査型露光装置および露光方法
JP2000231184A (ja) * 1999-02-12 2000-08-22 Toshiba Corp アレイ基板とその製造方法
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JP2003248299A (ja) * 2002-02-26 2003-09-05 Toshiba Corp マスク基板およびその製造方法
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JP2004247487A (ja) * 2003-02-13 2004-09-02 Canon Inc 走査露光装置
JP2004327660A (ja) 2003-04-24 2004-11-18 Nikon Corp 走査型投影露光装置、露光方法及びデバイス製造方法
JP2004335864A (ja) * 2003-05-09 2004-11-25 Nikon Corp 露光装置及び露光方法
EP1480065A3 (en) 2003-05-23 2006-05-10 Canon Kabushiki Kaisha Projection optical system, exposure apparatus, and device manufacturing method
JP2005039211A (ja) * 2003-06-30 2005-02-10 Canon Inc 投影光学系、露光装置及びデバイスの製造方法
JP2005024941A (ja) * 2003-07-03 2005-01-27 Nikon Corp 投影光学系、投影露光装置、及び投影露光方法
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TWI271602B (en) * 2004-03-31 2007-01-21 Fujifilm Corp A correcting method and an exposure method of exposure device, and an exposure device
CN1954408B (zh) * 2004-06-04 2012-07-04 尼康股份有限公司 曝光装置、曝光方法及元件制造方法
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JP2006039446A (ja) 2004-07-30 2006-02-09 Ricoh Co Ltd 画像形成方法、静電荷像現像用トナー
JP2007014631A (ja) 2005-07-08 2007-01-25 Sanyo Product Co Ltd 遊技機
JP4984810B2 (ja) * 2006-02-16 2012-07-25 株式会社ニコン 露光方法、露光装置及びフォトマスク
EP2003506A2 (en) * 2006-03-20 2008-12-17 Nikon Corporation Reflective, refractive and projecting optical system; reflective, refractive and projecting device; scanning exposure device; and method of manufacturing micro device

Also Published As

Publication number Publication date
CN101976018A (zh) 2011-02-16
JP2013178535A (ja) 2013-09-09
US20130021589A1 (en) 2013-01-24
JPWO2007094198A1 (ja) 2009-07-02
TW200732868A (en) 2007-09-01
KR101415411B1 (ko) 2014-07-04
EP1986220A4 (en) 2010-08-18
KR20080101867A (ko) 2008-11-21
WO2007094198A1 (ja) 2007-08-23
US8867019B2 (en) 2014-10-21
JP5453806B2 (ja) 2014-03-26
US20090021712A1 (en) 2009-01-22
US8305556B2 (en) 2012-11-06
TWI424287B (zh) 2014-01-21
CN101385123B (zh) 2010-12-15
EP1986220A1 (en) 2008-10-29
CN101976018B (zh) 2013-01-30
CN101385123A (zh) 2009-03-11

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210208