JPS6442655A - Structure of reticle - Google Patents

Structure of reticle

Info

Publication number
JPS6442655A
JPS6442655A JP19910987A JP19910987A JPS6442655A JP S6442655 A JPS6442655 A JP S6442655A JP 19910987 A JP19910987 A JP 19910987A JP 19910987 A JP19910987 A JP 19910987A JP S6442655 A JPS6442655 A JP S6442655A
Authority
JP
Japan
Prior art keywords
region
wafer
regions
image
device pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19910987A
Other languages
Japanese (ja)
Inventor
Toshiyuki Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19910987A priority Critical patent/JPS6442655A/en
Publication of JPS6442655A publication Critical patent/JPS6442655A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To increase a number of chips per wafer by forming the region of a device pattern and the region of a wafer alignment mark for directly drawing an image by charged beams separately from each other and surrounding the regions with a light shaded region. CONSTITUTION:The 2 regions of the device pattern region 102 in which a device pattern and a chip alignment mark 104 for directly drawing an image by charged beams and the wafer alignment mark region 103 for directly drawing an image by charged beams are formed on a reticle 101 separately from each other, and these regions are surrounded by the light shaded region 105, thus permitting either of both regions to be blinded at the time of reduction projection exposure and only the other to be used for exposing on the wafer, accordingly, the unnecessary mark 103 not to be used for exposure, and the number of the chips to be formed on the wafer to be increased by the area corresponding to the mark 103.
JP19910987A 1987-08-11 1987-08-11 Structure of reticle Pending JPS6442655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19910987A JPS6442655A (en) 1987-08-11 1987-08-11 Structure of reticle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19910987A JPS6442655A (en) 1987-08-11 1987-08-11 Structure of reticle

Publications (1)

Publication Number Publication Date
JPS6442655A true JPS6442655A (en) 1989-02-14

Family

ID=16402275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19910987A Pending JPS6442655A (en) 1987-08-11 1987-08-11 Structure of reticle

Country Status (1)

Country Link
JP (1) JPS6442655A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013178535A (en) * 2006-02-16 2013-09-09 Nikon Corp Mask and mask manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013178535A (en) * 2006-02-16 2013-09-09 Nikon Corp Mask and mask manufacturing method

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