HK1099962A1 - Exposure apparatus, exposure method, and method for manufacturing device - Google Patents

Exposure apparatus, exposure method, and method for manufacturing device

Info

Publication number
HK1099962A1
HK1099962A1 HK07107176.4A HK07107176A HK1099962A1 HK 1099962 A1 HK1099962 A1 HK 1099962A1 HK 07107176 A HK07107176 A HK 07107176A HK 1099962 A1 HK1099962 A1 HK 1099962A1
Authority
HK
Hong Kong
Prior art keywords
exposure
manufacturing device
exposure apparatus
exposure method
manufacturing
Prior art date
Application number
HK07107176.4A
Other languages
English (en)
Inventor
Takeyuki Mizutani
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004274990A external-priority patent/JP4400390B2/ja
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1099962A1 publication Critical patent/HK1099962A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
HK07107176.4A 2004-09-17 2007-07-05 Exposure apparatus, exposure method, and method for manufacturing device HK1099962A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004271635 2004-09-17
JP2004274990A JP4400390B2 (ja) 2004-09-22 2004-09-22 露光装置及びデバイス製造方法
PCT/JP2005/017163 WO2006030902A1 (ja) 2004-09-17 2005-09-16 露光装置、露光方法及びデバイス製造方法

Publications (1)

Publication Number Publication Date
HK1099962A1 true HK1099962A1 (en) 2007-08-31

Family

ID=36060149

Family Applications (1)

Application Number Title Priority Date Filing Date
HK07107176.4A HK1099962A1 (en) 2004-09-17 2007-07-05 Exposure apparatus, exposure method, and method for manufacturing device

Country Status (8)

Country Link
US (3) US8675174B2 (ko)
EP (1) EP1796146B1 (ko)
KR (7) KR101618493B1 (ko)
HK (1) HK1099962A1 (ko)
IL (1) IL181873A (ko)
SG (3) SG10201802153XA (ko)
TW (5) TW201804516A (ko)
WO (1) WO2006030902A1 (ko)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7180571B2 (en) * 2004-12-08 2007-02-20 Asml Netherlands B.V. Lithographic projection apparatus and actuator
EP3079164A1 (en) 2005-01-31 2016-10-12 Nikon Corporation Exposure apparatus and method for producing device
US7330238B2 (en) * 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US7701551B2 (en) 2006-04-14 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5151977B2 (ja) * 2006-05-10 2013-02-27 株式会社ニコン 露光装置及びデバイス製造方法
CN103645608B (zh) 2006-08-31 2016-04-20 株式会社尼康 曝光装置及方法、组件制造方法以及决定方法
TWI572995B (zh) 2006-08-31 2017-03-01 尼康股份有限公司 Exposure method and exposure apparatus, and component manufacturing method
TWI653511B (zh) 2006-08-31 2019-03-11 日商尼康股份有限公司 Exposure apparatus, exposure method, and component manufacturing method
TWI652720B (zh) 2006-09-01 2019-03-01 日商尼康股份有限公司 Exposure method and device and component manufacturing method
KR101660668B1 (ko) 2006-09-01 2016-09-27 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
JP2008147577A (ja) * 2006-12-13 2008-06-26 Canon Inc 露光装置及びデバイス製造方法
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US7586960B2 (en) * 2007-01-23 2009-09-08 Corning Incorporated Forced wavelength chirping in semiconductor lasers
CN104111588B (zh) * 2007-07-18 2016-08-03 株式会社尼康 测量方法、载台装置、及曝光装置
NL1035908A1 (nl) 2007-09-25 2009-03-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL1036009A1 (nl) * 2007-10-05 2009-04-07 Asml Netherlands Bv An Immersion Lithography Apparatus.
US8233139B2 (en) * 2008-03-27 2012-07-31 Nikon Corporation Immersion system, exposure apparatus, exposing method, and device fabricating method
JP4922359B2 (ja) * 2008-07-25 2012-04-25 エーエスエムエル ネザーランズ ビー．ブイ． 流体ハンドリング構造、リソグラフィ装置及びデバイス製造方法
NL2003392A (en) 2008-09-17 2010-03-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
JP5482784B2 (ja) 2009-03-10 2014-05-07 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
NL2009692A (en) 2011-12-07 2013-06-10 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
US9823580B2 (en) 2012-07-20 2017-11-21 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
US9568828B2 (en) 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9494870B2 (en) * 2012-10-12 2016-11-15 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9651873B2 (en) * 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
US9720331B2 (en) 2012-12-27 2017-08-01 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
JP6286183B2 (ja) * 2013-11-07 2018-02-28 株式会社日立ハイテクノロジーズ 分析装置

Family Cites Families (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
JPS6078454A (ja) 1983-10-05 1985-05-04 Nippon Kogaku Kk <Nikon> 投影露光装置
US4666273A (en) 1983-10-05 1987-05-19 Nippon Kogaku K. K. Automatic magnification correcting system in a projection optical apparatus
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JP2830492B2 (ja) 1991-03-06 1998-12-02 株式会社ニコン 投影露光装置及び投影露光方法
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
US5357304A (en) 1992-03-25 1994-10-18 Sony Corporation Image development apparatus and method
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JPH07220990A (ja) * 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US6036667A (en) * 1996-10-04 2000-03-14 United States Surgical Corporation Ultrasonic dissection and coagulation system
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
CN1144263C (zh) 1996-11-28 2004-03-31 株式会社尼康 曝光装置以及曝光方法
DE69735016T2 (de) 1996-12-24 2006-08-17 Asml Netherlands B.V. Lithographisches Gerät mit zwei Objekthaltern
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
JP2001345245A (ja) 2000-05-31 2001-12-14 Nikon Corp 露光方法及び露光装置並びにデバイス製造方法
JP2001358056A (ja) * 2000-06-15 2001-12-26 Canon Inc 露光装置
TW497013B (en) 2000-09-07 2002-08-01 Asm Lithography Bv Method for calibrating a lithographic projection apparatus and apparatus capable of applying such a method
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
EP1532489A2 (en) 2002-08-23 2005-05-25 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
CN101424881B (zh) 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100446179C (zh) 2002-12-10 2008-12-24 株式会社尼康 曝光设备和器件制造法
WO2004055803A1 (en) * 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
CN100385535C (zh) 2002-12-19 2008-04-30 皇家飞利浦电子股份有限公司 照射光敏层上斑点的方法和装置
KR101643112B1 (ko) 2003-02-26 2016-07-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
KR20170064003A (ko) * 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
KR101178754B1 (ko) 2003-04-10 2012-09-07 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI421906B (zh) * 2003-05-23 2014-01-01 尼康股份有限公司 An exposure method, an exposure apparatus, and an element manufacturing method
JP4770129B2 (ja) * 2003-05-23 2011-09-14 株式会社ニコン 露光装置、並びにデバイス製造方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1646074A4 (en) * 2003-07-09 2007-10-03 Nikon Corp EXPOSURE DEVICE AND METHOD OF MANUFACTURE
EP1643543B1 (en) * 2003-07-09 2010-11-24 Nikon Corporation Exposure apparatus and method for manufacturing device
KR101475995B1 (ko) * 2003-08-21 2014-12-23 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101590686B1 (ko) 2003-09-03 2016-02-01 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
WO2005029559A1 (ja) 2003-09-19 2005-03-31 Nikon Corporation 露光装置及びデバイス製造方法
EP1519230A1 (en) * 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101498437B1 (ko) 2003-09-29 2015-03-03 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
JP4515209B2 (ja) * 2003-10-02 2010-07-28 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US7352433B2 (en) * 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005159322A (ja) 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
JP2005159431A (ja) 2003-11-20 2005-06-16 Nec Infrontia Corp シグナリング方法並びにサーバ及びゲートウェイ端末
JP2005183744A (ja) * 2003-12-22 2005-07-07 Nikon Corp 露光装置及びデバイス製造方法
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005191394A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
WO2005069355A1 (ja) * 2004-01-15 2005-07-28 Nikon Corporation 露光装置及びデバイスの製造方法
JP2007520893A (ja) 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
EP1727188A4 (en) 2004-02-20 2008-11-26 Nikon Corp EXPOSURE DEVICE, FEEDING METHOD AND RECOVERY METHOD, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD
KR101707294B1 (ko) 2004-03-25 2017-02-15 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4474979B2 (ja) 2004-04-15 2010-06-09 株式会社ニコン ステージ装置及び露光装置
JP4677986B2 (ja) 2004-04-19 2011-04-27 株式会社ニコン ノズル部材、露光方法、露光装置及びデバイス製造方法
EP1747499A2 (en) 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4543767B2 (ja) * 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
US7161654B2 (en) * 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7330238B2 (en) * 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow

Also Published As

Publication number Publication date
KR20150046366A (ko) 2015-04-29
IL181873A (en) 2014-09-30
US20080032234A1 (en) 2008-02-07
TWI610340B (zh) 2018-01-01
KR20130010916A (ko) 2013-01-29
TW201546879A (zh) 2015-12-16
KR101264939B1 (ko) 2013-05-15
US8675174B2 (en) 2014-03-18
SG188914A1 (en) 2013-04-30
TWI417940B (zh) 2013-12-01
KR101618493B1 (ko) 2016-05-04
EP1796146A1 (en) 2007-06-13
SG155929A1 (en) 2009-10-29
TW201804516A (zh) 2018-02-01
EP1796146A4 (en) 2009-09-02
US9958785B2 (en) 2018-05-01
KR20170010116A (ko) 2017-01-25
KR101285963B1 (ko) 2013-07-12
KR20140119816A (ko) 2014-10-10
TW201415535A (zh) 2014-04-16
KR101506100B1 (ko) 2015-03-26
EP1796146B1 (en) 2013-01-16
KR20120034137A (ko) 2012-04-09
IL181873A0 (en) 2007-07-04
TWI506674B (zh) 2015-11-01
KR101508455B1 (ko) 2015-04-07
KR20130129315A (ko) 2013-11-27
TW201237933A (en) 2012-09-16
SG10201802153XA (en) 2018-05-30
US20140111783A1 (en) 2014-04-24
US20180239261A1 (en) 2018-08-23
KR20070054634A (ko) 2007-05-29
TW200623234A (en) 2006-07-01
TWI508136B (zh) 2015-11-11
WO2006030902A1 (ja) 2006-03-23
KR101700547B1 (ko) 2017-01-26

Similar Documents

Publication Publication Date Title
HK1243226B (zh) 曝光裝置、曝光方法以及器件製造方法
HK1251949A1 (zh) 曝光方法和曝光裝置、及半導體元件製造方法
HK1244547A1 (zh) 曝光方法和裝置以及製造裝置的方法
HK1248027A1 (zh) 曝光裝置和器件製造方法
IL181873A0 (en) Exposure apparatus, exposure method, and method for manufacturing device
HK1215755A1 (zh) 曝光裝置及元件製造方法
EP1821338A4 (en) EXPOSURE DEVICE, EXPOSURE METHOD AND MANUFACTURING METHOD FOR THE DEVICE
IL188276A0 (en) Exposure method and exposure apparatus, and device manufacturing method
EP1947683A4 (en) EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
HK1199107A1 (zh) 曝光設備、 曝光方式以及裝置製造方法
EP1901339A4 (en) EXPOSURE DEVICE, EXPOSURE METHOD, COMPONENT MANUFACTURING METHOD AND SYSTEM
EP1808884A4 (en) EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
IL179826A0 (en) Exposure apparatus, exposure method, and device producing method
HK1091596A1 (zh) 曝光裝置、曝光方法以及設備製造方法
SG116611A1 (en) Lithographic apparatus and device manufacturing method.
IL183882A0 (en) Substrate holding apparatus, exposure apparatus, and device fabricating method
HK1173232A1 (en) Exposure method and apparatus, and device manufacturing method
HK1168662A1 (en) Exposure method and apparatus, and device manufacturing method
HK1093119A1 (en) Exposure apparatus, exposure method, and device manufacturing method
SG10201607457PA (en) Exposure apparatus, exposure method and device manufacturing method
HK1225811A1 (zh) 曝光裝置、曝光方法以及器件製造方法
HK1243191A1 (zh) 曝光裝置、曝光方法及裝置製造方法
EP1876635A4 (en) EXPOSURE METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD
EP1965414A4 (en) EXPOSURE METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
EP1863070A4 (en) EXPOSURE DEVICE AND METHOD FOR PRODUCING THE DEVICE

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20190914