HK1094278A1 - Self-aligned silicon carbide or gallium nitride semiconductor devices and methods of making the same - Google Patents
Self-aligned silicon carbide or gallium nitride semiconductor devices and methods of making the sameInfo
- Publication number
- HK1094278A1 HK1094278A1 HK07101025.0A HK07101025A HK1094278A1 HK 1094278 A1 HK1094278 A1 HK 1094278A1 HK 07101025 A HK07101025 A HK 07101025A HK 1094278 A1 HK1094278 A1 HK 1094278A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- self
- making
- methods
- silicon carbide
- same
- Prior art date
Links
- 229910002601 GaN Inorganic materials 0.000 title 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55239804P | 2004-03-12 | 2004-03-12 | |
US11/076,857 US7470967B2 (en) | 2004-03-12 | 2005-03-11 | Self-aligned silicon carbide semiconductor devices and methods of making the same |
PCT/US2005/008526 WO2005089303A2 (en) | 2004-03-12 | 2005-03-14 | Self-aligned silicon carbide semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1094278A1 true HK1094278A1 (en) | 2007-03-23 |
Family
ID=34922300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK07101025.0A HK1094278A1 (en) | 2004-03-12 | 2007-01-29 | Self-aligned silicon carbide or gallium nitride semiconductor devices and methods of making the same |
Country Status (10)
Country | Link |
---|---|
US (2) | US7470967B2 (de) |
EP (1) | EP1726043B1 (de) |
JP (1) | JP5101273B2 (de) |
KR (2) | KR101259330B1 (de) |
CN (1) | CN101040387B (de) |
AU (1) | AU2005222981B2 (de) |
CA (1) | CA2557702A1 (de) |
HK (1) | HK1094278A1 (de) |
NZ (1) | NZ549359A (de) |
WO (1) | WO2005089303A2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7132751B2 (en) * | 2004-06-22 | 2006-11-07 | Intel Corporation | Memory cell using silicon carbide |
JP4612534B2 (ja) * | 2005-12-01 | 2011-01-12 | 三菱電機株式会社 | 半導体装置の製造方法 |
US7274083B1 (en) * | 2006-05-02 | 2007-09-25 | Semisouth Laboratories, Inc. | Semiconductor device with surge current protection and method of making the same |
US8269262B2 (en) * | 2006-05-02 | 2012-09-18 | Ss Sc Ip Llc | Vertical junction field effect transistor with mesa termination and method of making the same |
US7821015B2 (en) * | 2006-06-19 | 2010-10-26 | Semisouth Laboratories, Inc. | Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy |
US8067776B2 (en) * | 2007-06-08 | 2011-11-29 | Nissan Motor Co., Ltd. | Method of manufacturing semiconductor device and semiconductor device manufactured thereof |
US20100013009A1 (en) * | 2007-12-14 | 2010-01-21 | James Pan | Structure and Method for Forming Trench Gate Transistors with Low Gate Resistance |
JP4761319B2 (ja) * | 2008-02-19 | 2011-08-31 | シャープ株式会社 | 窒化物半導体装置とそれを含む電力変換装置 |
US7560325B1 (en) * | 2008-04-14 | 2009-07-14 | Semisouth Laboratories, Inc. | Methods of making lateral junction field effect transistors using selective epitaxial growth |
US20100038715A1 (en) * | 2008-08-18 | 2010-02-18 | International Business Machines Corporation | Thin body silicon-on-insulator transistor with borderless self-aligned contacts |
US8278666B1 (en) * | 2009-09-25 | 2012-10-02 | Northrop Grumman Systems Corporation | Method and apparatus for growing high purity 2H-silicon carbide |
US8890277B2 (en) | 2010-03-15 | 2014-11-18 | University Of Florida Research Foundation Inc. | Graphite and/or graphene semiconductor devices |
CN101834206B (zh) * | 2010-04-12 | 2012-10-10 | 清华大学 | 半导体器件结构及其形成方法 |
CN102339868B (zh) * | 2011-09-01 | 2013-08-14 | 西安电子科技大学 | 带反型隔离层结构的金属半导体场效应晶体管及制作方法 |
US9093395B2 (en) * | 2011-09-02 | 2015-07-28 | Avogy, Inc. | Method and system for local control of defect density in gallium nitride based electronics |
KR20130107490A (ko) * | 2012-03-22 | 2013-10-02 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
CN104051243A (zh) * | 2013-03-12 | 2014-09-17 | 中国科学院宁波材料技术与工程研究所 | 一种非晶态碳化硅薄膜的制备方法及其薄膜晶体管 |
JP6553336B2 (ja) * | 2014-07-28 | 2019-07-31 | エア・ウォーター株式会社 | 半導体装置 |
EP3180803A4 (de) * | 2014-08-13 | 2018-04-11 | Intel Corporation | Selbstausgerichtete gate-last-iii-n-transistoren |
CN104167445B (zh) * | 2014-08-29 | 2017-05-10 | 电子科技大学 | 具有埋栅结构的氮化镓基增强耗尽型异质结场效应晶体管 |
US9780206B2 (en) * | 2015-02-27 | 2017-10-03 | Purdue Research Foundation | Methods of reducing the electrical and thermal resistance of SiC substrates and devices made thereby |
CN107924939A (zh) * | 2015-08-11 | 2018-04-17 | 剑桥电子有限公司 | 具有间隔层的半导体结构 |
CN114335152B (zh) * | 2022-03-02 | 2022-05-24 | 江苏游隼微电子有限公司 | 一种碳化硅功率半导体器件及其制备方法 |
CN114678419A (zh) * | 2022-05-27 | 2022-06-28 | 深圳平创半导体有限公司 | 半导体器件及其制作方法、功率开关器件和功率放大器件 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07107906B2 (ja) * | 1987-10-30 | 1995-11-15 | 株式会社東芝 | 半導体装置の製造方法 |
JPH01117366U (de) * | 1988-01-30 | 1989-08-08 | ||
JPH03292744A (ja) * | 1990-01-24 | 1991-12-24 | Toshiba Corp | 化合物半導体装置およびその製造方法 |
JPH04167439A (ja) * | 1990-10-30 | 1992-06-15 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5270554A (en) | 1991-06-14 | 1993-12-14 | Cree Research, Inc. | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
US5925895A (en) | 1993-10-18 | 1999-07-20 | Northrop Grumman Corporation | Silicon carbide power MESFET with surface effect supressive layer |
US5399883A (en) | 1994-05-04 | 1995-03-21 | North Carolina State University At Raleigh | High voltage silicon carbide MESFETs and methods of fabricating same |
JPH08115924A (ja) * | 1994-08-22 | 1996-05-07 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタおよびその製造方法 |
US5686737A (en) | 1994-09-16 | 1997-11-11 | Cree Research, Inc. | Self-aligned field-effect transistor for high frequency applications |
US5543637A (en) | 1994-11-14 | 1996-08-06 | North Carolina State University | Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein |
JP3158973B2 (ja) | 1995-07-20 | 2001-04-23 | 富士電機株式会社 | 炭化けい素縦型fet |
EP0851460B1 (de) * | 1996-12-24 | 1999-11-03 | Advantest Corporation | Kanonenlinse zur Partikelstrahlerzeugung |
JPH10209435A (ja) * | 1997-01-20 | 1998-08-07 | Nec Corp | 半導体装置及びその製造方法 |
JPH10209182A (ja) * | 1997-01-23 | 1998-08-07 | Mitsubishi Electric Corp | 電界効果トランジスタ及びその製造方法 |
WO1998035389A1 (en) * | 1997-02-07 | 1998-08-13 | Northrop Grumman Corporation | Silicon carbide power mesfet |
JPH11283994A (ja) * | 1998-03-30 | 1999-10-15 | Toshiba Corp | マルチフィンガー型電界効果トランジスタ |
US6159781A (en) | 1998-10-01 | 2000-12-12 | Chartered Semiconductor Manufacturing, Ltd. | Way to fabricate the self-aligned T-shape gate to reduce gate resistivity |
US6686616B1 (en) * | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
EP1358681A4 (de) | 2001-01-03 | 2008-04-30 | Univ Mississippi | Siliciumcarbid- und verwandte transistoren mit grosser bandlücke zur halbisolierenden epitaxie für schnelle hochleistungsanwendungen |
WO2003075319A2 (en) * | 2001-07-12 | 2003-09-12 | Mississippi State University | Self-aligned transistor and diode topologies |
US6906350B2 (en) * | 2001-10-24 | 2005-06-14 | Cree, Inc. | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
JP2004150538A (ja) * | 2002-10-30 | 2004-05-27 | Tadahiro Omi | 断熱パネル及び加熱装置 |
JP2005011915A (ja) * | 2003-06-18 | 2005-01-13 | Hitachi Ltd | 半導体装置、半導体回路モジュールおよびその製造方法 |
-
2005
- 2005-03-11 US US11/076,857 patent/US7470967B2/en active Active
- 2005-03-14 EP EP05725593.7A patent/EP1726043B1/de not_active Not-in-force
- 2005-03-14 CN CN200580008008.1A patent/CN101040387B/zh not_active Expired - Fee Related
- 2005-03-14 CA CA002557702A patent/CA2557702A1/en not_active Abandoned
- 2005-03-14 AU AU2005222981A patent/AU2005222981B2/en not_active Ceased
- 2005-03-14 KR KR1020127014340A patent/KR101259330B1/ko not_active IP Right Cessation
- 2005-03-14 KR KR1020067018730A patent/KR101318090B1/ko not_active IP Right Cessation
- 2005-03-14 WO PCT/US2005/008526 patent/WO2005089303A2/en not_active Application Discontinuation
- 2005-03-14 NZ NZ549359A patent/NZ549359A/en not_active IP Right Cessation
- 2005-03-14 JP JP2007503110A patent/JP5101273B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-29 HK HK07101025.0A patent/HK1094278A1/xx not_active IP Right Cessation
- 2007-01-30 US US11/699,509 patent/US7510921B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2005089303A3 (en) | 2007-04-05 |
KR101259330B1 (ko) | 2013-05-06 |
CN101040387B (zh) | 2010-06-09 |
US20050199882A1 (en) | 2005-09-15 |
KR20070051776A (ko) | 2007-05-18 |
CA2557702A1 (en) | 2005-09-29 |
EP1726043A2 (de) | 2006-11-29 |
US7470967B2 (en) | 2008-12-30 |
EP1726043B1 (de) | 2013-11-20 |
US7510921B2 (en) | 2009-03-31 |
NZ549359A (en) | 2009-03-31 |
EP1726043A4 (de) | 2010-11-03 |
WO2005089303A2 (en) | 2005-09-29 |
KR20120062948A (ko) | 2012-06-14 |
CN101040387A (zh) | 2007-09-19 |
AU2005222981B2 (en) | 2011-05-26 |
AU2005222981A1 (en) | 2005-09-29 |
JP5101273B2 (ja) | 2012-12-19 |
KR101318090B1 (ko) | 2013-10-14 |
JP2007529885A (ja) | 2007-10-25 |
US20070122951A1 (en) | 2007-05-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20180314 |