HK1064813A1 - Variable gain low-nose amplifier for a wireless terminal - Google Patents

Variable gain low-nose amplifier for a wireless terminal

Info

Publication number
HK1064813A1
HK1064813A1 HK04107455A HK04107455A HK1064813A1 HK 1064813 A1 HK1064813 A1 HK 1064813A1 HK 04107455 A HK04107455 A HK 04107455A HK 04107455 A HK04107455 A HK 04107455A HK 1064813 A1 HK1064813 A1 HK 1064813A1
Authority
HK
Hong Kong
Prior art keywords
amplifier
wireless terminal
variable gain
gain low
network
Prior art date
Application number
HK04107455A
Other languages
English (en)
Inventor
Hoe-Sam Jeong
Seung-Wook Lee
Won-Seok Lee
Joonbae Park
Kyeongho Lee
Original Assignee
Gct Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gct Semiconductor Inc filed Critical Gct Semiconductor Inc
Publication of HK1064813A1 publication Critical patent/HK1064813A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/02—Manually-operated control
    • H03G3/04—Manually-operated control in untuned amplifiers
    • H03G3/10—Manually-operated control in untuned amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/378—A variable capacitor being added in the output circuit, e.g. collector, drain, of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
HK04107455A 2001-03-29 2004-09-27 Variable gain low-nose amplifier for a wireless terminal HK1064813A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US27945101P 2001-03-29 2001-03-29
US09/940,806 US6424222B1 (en) 2001-03-29 2001-08-29 Variable gain low noise amplifier for a wireless terminal
PCT/US2002/009478 WO2002080357A1 (en) 2001-03-29 2002-03-28 Variable gain low-noise amplifier for a wireless terminal

Publications (1)

Publication Number Publication Date
HK1064813A1 true HK1064813A1 (en) 2005-02-04

Family

ID=26959667

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04107455A HK1064813A1 (en) 2001-03-29 2004-09-27 Variable gain low-nose amplifier for a wireless terminal

Country Status (11)

Country Link
US (2) US6424222B1 (xx)
EP (1) EP1374396B1 (xx)
JP (1) JP2004522350A (xx)
KR (1) KR100914730B1 (xx)
CN (1) CN1315255C (xx)
AT (1) ATE431009T1 (xx)
CA (1) CA2442332A1 (xx)
DE (1) DE60232230D1 (xx)
HK (1) HK1064813A1 (xx)
TW (1) TWI286878B (xx)
WO (1) WO2002080357A1 (xx)

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US7760019B2 (en) * 2008-03-04 2010-07-20 Micron Technology, Inc. Adaptive operational transconductance amplifier load compensation
US8229043B2 (en) * 2008-03-21 2012-07-24 Qualcomm Incorporated Stepped gain mixer
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WO2011023210A1 (en) * 2009-08-27 2011-03-03 Verigy ( Singapore) Pte. Ltd. Adjustable gain amplifier, automated test equipment and method for adjusting a gain of an amplifier
JP2011055055A (ja) * 2009-08-31 2011-03-17 Texas Instr Japan Ltd 増幅回路及び信号強度検出回路並びにオフセット電圧調整方法
TWM377794U (en) * 2009-09-18 2010-04-01 Princeton Technology Corp Low noise amplifier and radio frequency signal receiving system
CN102474231A (zh) * 2010-03-10 2012-05-23 松下电器产业株式会社 可变增益放大器
US8912843B2 (en) * 2010-07-06 2014-12-16 Cadence Ams Design India Private Limited Ultra low cut-off frequency filter
US8258869B2 (en) * 2010-08-01 2012-09-04 Quintic Holdings Low noise amplifier with current bleeding branch
US9178669B2 (en) 2011-05-17 2015-11-03 Qualcomm Incorporated Non-adjacent carrier aggregation architecture
US9252827B2 (en) 2011-06-27 2016-02-02 Qualcomm Incorporated Signal splitting carrier aggregation receiver architecture
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US20130109331A1 (en) * 2011-10-28 2013-05-02 Broadcom Corporation Transmit/receive switch with esd protection and methods for use therewith
US8400224B1 (en) * 2011-10-28 2013-03-19 Broadcom Corporation Programmable low noise amplifier and methods for use therewith
US20130109325A1 (en) * 2011-10-28 2013-05-02 Broadcom Corporation Dual mode local area network transceiver and methods for use therewith
US8774334B2 (en) 2011-11-09 2014-07-08 Qualcomm Incorporated Dynamic receiver switching
US9362958B2 (en) 2012-03-02 2016-06-07 Qualcomm Incorporated Single chip signal splitting carrier aggregation receiver architecture
US9172402B2 (en) 2012-03-02 2015-10-27 Qualcomm Incorporated Multiple-input and multiple-output carrier aggregation receiver reuse architecture
US9118439B2 (en) 2012-04-06 2015-08-25 Qualcomm Incorporated Receiver for imbalanced carriers
US9154356B2 (en) * 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
US9867194B2 (en) 2012-06-12 2018-01-09 Qualcomm Incorporated Dynamic UE scheduling with shared antenna and carrier aggregation
CN102790589B (zh) * 2012-08-27 2015-04-29 上海市计量测试技术研究院 一种用于测量高阻高压差分探头1MHz共模抑制比的放大器
US9300420B2 (en) 2012-09-11 2016-03-29 Qualcomm Incorporated Carrier aggregation receiver architecture
US9543903B2 (en) 2012-10-22 2017-01-10 Qualcomm Incorporated Amplifiers with noise splitting
CN103138725A (zh) * 2013-01-11 2013-06-05 华为技术有限公司 具有金属板电容的电路及射频开关、低噪声放大器
US8995591B2 (en) 2013-03-14 2015-03-31 Qualcomm, Incorporated Reusing a single-chip carrier aggregation receiver to support non-cellular diversity
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CN109787574B (zh) * 2018-12-29 2021-05-04 南京汇君半导体科技有限公司 一种毫米波可变增益放大器结构
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Also Published As

Publication number Publication date
EP1374396A1 (en) 2004-01-02
EP1374396B1 (en) 2009-05-06
CA2442332A1 (en) 2002-10-10
US6657498B2 (en) 2003-12-02
KR100914730B1 (ko) 2009-08-31
KR20040015080A (ko) 2004-02-18
TWI286878B (en) 2007-09-11
ATE431009T1 (de) 2009-05-15
DE60232230D1 (de) 2009-06-18
CN1315255C (zh) 2007-05-09
US20020190796A1 (en) 2002-12-19
EP1374396A4 (en) 2007-12-12
JP2004522350A (ja) 2004-07-22
CN1502164A (zh) 2004-06-02
WO2002080357A1 (en) 2002-10-10
US6424222B1 (en) 2002-07-23

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20110328