HK1063264A1 - Memory module and memory component built-in self test and methods thereof - Google Patents

Memory module and memory component built-in self test and methods thereof

Info

Publication number
HK1063264A1
HK1063264A1 HK04105978A HK04105978A HK1063264A1 HK 1063264 A1 HK1063264 A1 HK 1063264A1 HK 04105978 A HK04105978 A HK 04105978A HK 04105978 A HK04105978 A HK 04105978A HK 1063264 A1 HK1063264 A1 HK 1063264A1
Authority
HK
Hong Kong
Prior art keywords
methods
memory
self test
component built
memory module
Prior art date
Application number
HK04105978A
Other languages
English (en)
Inventor
John Halbert
Randy Bonella
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of HK1063264A1 publication Critical patent/HK1063264A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12015—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0405—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals comprising complete test loop
HK04105978A 2000-09-18 2004-08-10 Memory module and memory component built-in self test and methods thereof HK1063264A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/664,910 US6928593B1 (en) 2000-09-18 2000-09-18 Memory module and memory component built-in self test
PCT/US2001/028774 WO2002025957A2 (en) 2000-09-18 2001-09-14 Memory module and memory component built-in self test

Publications (1)

Publication Number Publication Date
HK1063264A1 true HK1063264A1 (en) 2004-12-17

Family

ID=24667948

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04105978A HK1063264A1 (en) 2000-09-18 2004-08-10 Memory module and memory component built-in self test and methods thereof

Country Status (7)

Country Link
US (1) US6928593B1 (zh)
CN (1) CN1319072C (zh)
AU (1) AU2001290935A1 (zh)
DE (1) DE10196635B4 (zh)
HK (1) HK1063264A1 (zh)
TW (1) TWI234784B (zh)
WO (1) WO2002025957A2 (zh)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260184B4 (de) * 2002-12-20 2005-08-25 Infineon Technologies Ag Speichermodul mit einer Testeinrichtung
DE10300781B4 (de) * 2003-01-11 2014-02-06 Qimonda Ag Speicherbaustein, Testsystem und Verfahren zum Testen eines oder mehrerer Speicherbausteine
DE10317371A1 (de) * 2003-04-15 2004-11-11 Infineon Technologies Ag Daten-Interface-Schaltung und Verfahren zum Testen einer Daten-Interface-Schaltung
US7184916B2 (en) * 2003-05-20 2007-02-27 Cray Inc. Apparatus and method for testing memory cards
US7139957B2 (en) * 2003-06-30 2006-11-21 Intel Corporation Automatic self test of an integrated circuit component via AC I/O loopback
US7194670B2 (en) * 2004-02-13 2007-03-20 International Business Machines Corp. Command multiplier for built-in-self-test
US20050289287A1 (en) * 2004-06-11 2005-12-29 Seung-Man Shin Method and apparatus for interfacing between test system and embedded memory on test mode setting operation
DE102004043051A1 (de) * 2004-09-06 2006-03-30 Infineon Technologies Ag Loop-back-Verfahren zur Vermessung des Interface-Timings von Halbleiterspeichervorrichtungen unter Verwendung des Normal-Mode-Speichers
KR100770749B1 (ko) * 2006-07-11 2007-10-26 삼성전자주식회사 셀프 테스트 기능을 추가한 메모리 컨트롤러 및 이를이용한 방법
EP1927949A1 (en) * 2006-12-01 2008-06-04 Thomson Licensing Array of processing elements with local registers
US7836372B2 (en) * 2007-06-08 2010-11-16 Apple Inc. Memory controller with loopback test interface
US7721175B2 (en) * 2007-08-21 2010-05-18 Micron Technology, Inc. System, apparatus, and method for memory built-in self testing using microcode sequencers
US8001434B1 (en) 2008-04-14 2011-08-16 Netlist, Inc. Memory board with self-testing capability
US8154901B1 (en) 2008-04-14 2012-04-10 Netlist, Inc. Circuit providing load isolation and noise reduction
US8386867B2 (en) 2009-07-02 2013-02-26 Silicon Image, Inc. Computer memory test structure
IT1397374B1 (it) 2009-12-30 2013-01-10 St Microelectronics Srl Soluzione integrata per l'individuazione dei componenti difettosi in dispositivi di memoria
US8543873B2 (en) * 2010-01-06 2013-09-24 Silicon Image, Inc. Multi-site testing of computer memory devices and serial IO ports
US8345558B2 (en) * 2010-02-02 2013-01-01 Juniper Networks, Inc. Packet-based memory test of a network device
JP2012027734A (ja) * 2010-07-23 2012-02-09 Panasonic Corp メモリコントローラおよびメモリアクセスシステム
CN102013274B (zh) * 2010-11-10 2013-08-07 无锡中星微电子有限公司 一种存储器的自检测电路和方法
US9299400B2 (en) 2012-09-28 2016-03-29 Intel Corporation Distributed row hammer tracking
CN103198001B (zh) * 2013-04-25 2017-02-01 加弘科技咨询(上海)有限公司 能够自测pcie接口的存储系统及测试方法
CN104425040A (zh) * 2013-08-23 2015-03-18 辉达公司 用于测试存储器的方法和系统
US9564245B2 (en) 2013-12-26 2017-02-07 Intel Corporation Integrated circuit defect detection and repair
US9548137B2 (en) 2013-12-26 2017-01-17 Intel Corporation Integrated circuit defect detection and repair
CN103943152B (zh) * 2014-03-31 2017-02-01 西安紫光国芯半导体有限公司 存储器的快速内建自测试系统及方法
CN105070321B (zh) * 2015-08-18 2019-03-08 珠海市一微半导体有限公司 存储器件的快速测试电路及方法
CN107305789B (zh) * 2016-04-21 2020-08-07 北京兆易创新科技股份有限公司 一种非挥发性存储器的自测试方法和装置
US9959185B2 (en) * 2016-04-28 2018-05-01 United Microelectronics Corp. Memory system capable of generating notification signals
TWI776785B (zh) * 2022-04-07 2022-09-01 點序科技股份有限公司 裸晶測試系統及其裸晶測試方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837785A (en) * 1983-06-14 1989-06-06 Aptec Computer Systems, Inc. Data transfer system and method of operation thereof
USRE34445E (en) 1985-01-18 1993-11-16 University Of Michigan Self-testing dynamic RAM
JP2882426B2 (ja) * 1991-03-29 1999-04-12 株式会社アドバンテスト アドレス発生装置
JPH0553924A (ja) * 1991-08-26 1993-03-05 Nec Corp 記憶装置の試験方式
US5815512A (en) * 1994-05-26 1998-09-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory testing device
US5638382A (en) * 1994-06-29 1997-06-10 Intel Corporation Built-in self test function for a processor including intermediate test results
US5613153A (en) 1994-10-03 1997-03-18 International Business Machines Corporation Coherency and synchronization mechanisms for I/O channel controllers in a data processing system
US5633878A (en) * 1995-01-20 1997-05-27 Telefonaktiebolaget Lm Ericsson Self-diagnostic data buffers
EP0744755A1 (en) * 1995-05-25 1996-11-27 International Business Machines Corporation Test method and device for embedded memories on semiconductor substrates
JPH0922393A (ja) * 1995-07-06 1997-01-21 Mitsubishi Electric Corp 通信機能を有するワンチップフラッシュメモリ装置
KR100492205B1 (ko) * 1996-04-30 2005-09-14 텍사스 인스트루먼츠 인코포레이티드 집적회로메모리디바이스의내장자가테스트구성
US5748640A (en) 1996-09-12 1998-05-05 Advanced Micro Devices Technique for incorporating a built-in self-test (BIST) of a DRAM block with existing functional test vectors for a microprocessor
US5961653A (en) 1997-02-19 1999-10-05 International Business Machines Corporation Processor based BIST for an embedded memory
US5815427A (en) * 1997-04-02 1998-09-29 Micron Technology, Inc. Modular memory circuit and method for forming same
US6286062B1 (en) * 1997-07-01 2001-09-04 Micron Technology, Inc. Pipelined packet-oriented memory system having a unidirectional command and address bus and a bidirectional data bus
CA2212089C (en) 1997-07-31 2006-10-24 Mosaid Technologies Incorporated Bist memory test system
US5982681A (en) 1997-10-10 1999-11-09 Lsi Logic Corporation Reconfigurable built-in self test circuit
US6058056A (en) * 1998-04-30 2000-05-02 Micron Technology, Inc. Data compression circuit and method for testing memory devices
US5982684A (en) * 1998-05-28 1999-11-09 Intel Corporation Parallel access testing of a memory array
US6415403B1 (en) * 1999-01-29 2002-07-02 Global Unichip Corporation Programmable built in self test for embedded DRAM
US6477674B1 (en) * 1999-12-29 2002-11-05 Intel Corporation Method and apparatus for conducting input/output loop back tests using a local pattern generator and delay elements
JP4310878B2 (ja) 2000-02-10 2009-08-12 ソニー株式会社 バスエミュレーション装置

Also Published As

Publication number Publication date
DE10196635B4 (de) 2011-06-16
CN1475015A (zh) 2004-02-11
WO2002025957A3 (en) 2002-07-11
WO2002025957A2 (en) 2002-03-28
DE10196635T1 (de) 2003-08-21
CN1319072C (zh) 2007-05-30
US6928593B1 (en) 2005-08-09
TWI234784B (en) 2005-06-21
AU2001290935A1 (en) 2002-04-02

Similar Documents

Publication Publication Date Title
HK1063264A1 (en) Memory module and memory component built-in self test and methods thereof
SG94870A1 (en) Built-in self-test using embedded memory and processor in an application specific integrated circuit
SG83799A1 (en) Semiconductor device and memory module
TW520094U (en) Memory card connecting seat assembly and its detection device
HK1071941A1 (en) Self-test electronic assembly and test system
GB2362729B (en) Memory access debug facility
AU2003295327A8 (en) Self aligned memory element and wordline
GB2370364B (en) Testing integrated circuits
EP1324205A4 (en) MEMORY MODULE
GB2365580B (en) Built-in self test for content adjustable memory
TW496614U (en) IC test socket
GB2362990B (en) Memory device
GB2366890B (en) Memory testing apparatus and method
TW521858U (en) Integrated circuit apparatus with expandable memory
GB2370126B (en) Memory testing
GB2362976B (en) Memory device
GB0019618D0 (en) Spin memory device
TW438095U (en) Memory card connecting device
TW509404U (en) Memory card socket structure
TW476416U (en) IC testing tool structure
TW483583U (en) Chip test device
TW474471U (en) Memory card structure
GB0010671D0 (en) Memory device
TW543960U (en) Improved memory card connecting seat
TW521890U (en) Connecting device for shockproof memory card

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20170914