GB962166A - Improvements in or relating to methods of treating solid materials - Google Patents

Improvements in or relating to methods of treating solid materials

Info

Publication number
GB962166A
GB962166A GB3462160A GB3462160A GB962166A GB 962166 A GB962166 A GB 962166A GB 3462160 A GB3462160 A GB 3462160A GB 3462160 A GB3462160 A GB 3462160A GB 962166 A GB962166 A GB 962166A
Authority
GB
United Kingdom
Prior art keywords
furnace
powder
boat
oct
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3462160A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB962166A publication Critical patent/GB962166A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB3462160A 1959-10-13 1960-10-10 Improvements in or relating to methods of treating solid materials Expired GB962166A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL244298 1959-10-13

Publications (1)

Publication Number Publication Date
GB962166A true GB962166A (en) 1964-07-01

Family

ID=19751976

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3462160A Expired GB962166A (en) 1959-10-13 1960-10-10 Improvements in or relating to methods of treating solid materials

Country Status (6)

Country Link
CH (1) CH442236A (fr)
DE (1) DE1240816B (fr)
ES (1) ES261609A1 (fr)
FR (1) FR1270317A (fr)
GB (1) GB962166A (fr)
NL (1) NL244298A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1273330A1 (fr) * 2000-03-23 2003-01-08 Nippon Steel Chemical Co., Ltd. Procede de purification par sublimation et appareil associe

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1258397B (de) * 1962-11-15 1968-01-11 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung durch einkristallines Aufwachsen halbleitender Schichten mittels Transportreaktion

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (fr) * 1951-03-07 1900-01-01
NL168491B (fr) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1273330A1 (fr) * 2000-03-23 2003-01-08 Nippon Steel Chemical Co., Ltd. Procede de purification par sublimation et appareil associe
EP1273330A4 (fr) * 2000-03-23 2003-06-04 Nippon Steel Chemical Co Procede de purification par sublimation et appareil associe
US6878183B2 (en) 2000-03-23 2005-04-12 Nippon Steel Chemical Co., Ltd. Sublimation purifying method and apparatus

Also Published As

Publication number Publication date
NL244298A (fr)
CH442236A (de) 1967-08-31
DE1240816B (de) 1967-05-24
FR1270317A (fr) 1961-08-25
ES261609A1 (es) 1960-12-01

Similar Documents

Publication Publication Date Title
GB774270A (en) Method of producing bodies of metals or matalloids
JPS5792591A (en) Production of single crystal
US4303465A (en) Method of growing monocrystals of corundum from a melt
GB1074248A (en) High resistivity gallium arsenide and process of making same
DE1292640B (de) Vorrichtung zum Abscheiden von hochreinem Silicium aus einem hochreinen, eine Siliciumverbindung enthaltenden Reaktionsgas
GB962166A (en) Improvements in or relating to methods of treating solid materials
INUZUKA et al. On In2Te3, its preparation and lattice constant
GB939102A (en) Improvements in and relating to the production of crystals, and apparatus for use therein
Wehmeier The growth of cadmium chromium selenide by chemical transport with cadmium chloride and the behavior of cadmium chromium selenide at elevated temperatures
US3242015A (en) Apparatus and method for producing single crystal structures
GB1045664A (en) A process for melting a rod of polycrystalline material zone-by-zone
JPS539209A (en) High frequency heating coil of floating zone purifying apparatus
GB903412A (en) Improvements in devices for use in crystal-pulling apparatus
GB1148007A (en) Improvements in or relating to a method of and apparatus for crucible-free zone melting
GB1146230A (en) Apparatus for causing a rod of crystalline material to grow
Morin et al. Growth of titanium single crystals by electrotransport
GB2159433A (en) Chrysoberyl single crystal showing iridescent effect and process for its preparation
JPS5688895A (en) Growth of single crystal
GB809486A (en) Method and apparatus for producing single-crystal semiconductor material
GB1057543A (en) Method of growing lithium ferrite
FR2122768A5 (en) Ruby single crystals - prodn in cold crucibles in an oxidising atmos
GB1495800A (en) Manufacture of monocrystalline gallium arsenide
SU388498A1 (ru) Способ получени монодоменных кристаллов метатанталата лити
DELONS Growth of rutile single crystals by chemical vapor transport(Growth of rutile single crystals by chemical vapor transport)[M. S. Thesis]
GB1502087A (en) Method of preparing semiconductor compounds and manufacturing single crystals thereof