GB1502087A - Method of preparing semiconductor compounds and manufacturing single crystals thereof - Google Patents

Method of preparing semiconductor compounds and manufacturing single crystals thereof

Info

Publication number
GB1502087A
GB1502087A GB511376A GB511376A GB1502087A GB 1502087 A GB1502087 A GB 1502087A GB 511376 A GB511376 A GB 511376A GB 511376 A GB511376 A GB 511376A GB 1502087 A GB1502087 A GB 1502087A
Authority
GB
United Kingdom
Prior art keywords
temperature
liquid mass
gallium arsenide
mass
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB511376A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1502087A publication Critical patent/GB1502087A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C30B11/065—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added before crystallising, e.g. synthesis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1502087 Semi-conductor compounds; gallium arsenide PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 10 Feb 1976 [12 Feb 1975] 05113/76 Heading C1A A III-V type semi-conductor compound is synthesized from at least one volatile component supplied in gaseous form and at least one component in a liquid mass heated in a horizontal elongate vessel, the liquid mass having a free surface at its upper side where the volatile component is supplied to the liquid mass from the gaseous phase, portions of the liquid mass nearest the wall of the vessel being kept at a lower temperature than portions thereof present at the free surface of the liquid. Suitably, the temperature gradient between the free surface of the liquid and the wall of the elongate vessel is between 5 and 20‹ C. per cm., the temperature gradient in the longitudinal direction of the vessel during synthesis being negligible with respect thereto. In a preferred embodiment, gallium arsenide is made from a liquid mass 2 of gallium and arsenic in vapour form supplied from a store 7 of solid arsenic provided in the same space as the liquid mass. The temperature of the arsenic store is gradually raised to approximately 620‹ C., while simultaneously the free surface of the liquid mass in boat 2 is gradually brought throughout the greater part of its length to approximately 1250‹ C., while the temperature of the wall of the same part of the length of the mass is gradually brought to approximately 1230‹ C., solid gallium arsenide being deposited on the wall. The necessary temperature control is effected by control of heating elements 22 and 21 in the body and cover of the furnace 8 respectively, and distributed over the length of the furnace so that three temperature zones can be formed, viz, a first zone 11 comprising chamber 14 of tube 5 in which the arsenic is heated, a second zone 12 enabling the temperature of a seed crystal 3 of gallium arsenide to be adjusted, and a third zone 13 intended to bring the gallium mass to the desired temperature and after the synthesis of the gallium arsenide to adjust a cooling gradient in the crystallization step. Preferably the temperature of the seed crystal during the heating of the liquid mass is kept lower than that of the greater part thereof and does not exceed 1100‹ C. A rod-shaped single crystal of the semi-conductor compound so made may be grown from the seed crystal in boat 2 while using a temperature gradient in the longitudinal direction of the boat.
GB511376A 1975-02-12 1976-02-10 Method of preparing semiconductor compounds and manufacturing single crystals thereof Expired GB1502087A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7504325A FR2300616A1 (en) 1975-02-12 1975-02-12 SEMICONDUCTOR COMPOUNDS SYNTHESIS PROCESS

Publications (1)

Publication Number Publication Date
GB1502087A true GB1502087A (en) 1978-02-22

Family

ID=9151100

Family Applications (1)

Application Number Title Priority Date Filing Date
GB511376A Expired GB1502087A (en) 1975-02-12 1976-02-10 Method of preparing semiconductor compounds and manufacturing single crystals thereof

Country Status (5)

Country Link
JP (1) JPS51115769A (en)
BE (1) BE838425A (en)
DE (1) DE2605125A1 (en)
FR (1) FR2300616A1 (en)
GB (1) GB1502087A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3726713A1 (en) * 1987-02-06 1988-08-18 Furukawa Electric Co Ltd METHOD AND DEVICE FOR GROWING CONNECTING SEMICONDUCTOR SINGLE CRYSTALS

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155073U (en) * 1984-09-11 1986-04-14

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1494831A (en) * 1966-07-05 1967-09-15 Radiotechnique Coprim Method of manufacturing a single crystal and implementation device
JPS5148152B2 (en) * 1972-05-11 1976-12-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3726713A1 (en) * 1987-02-06 1988-08-18 Furukawa Electric Co Ltd METHOD AND DEVICE FOR GROWING CONNECTING SEMICONDUCTOR SINGLE CRYSTALS

Also Published As

Publication number Publication date
FR2300616B1 (en) 1977-07-22
FR2300616A1 (en) 1976-09-10
DE2605125A1 (en) 1976-08-26
JPS51115769A (en) 1976-10-12
BE838425A (en) 1976-08-10
JPS5412267B2 (en) 1979-05-22

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee