FR1270317A - Procédé de traitement de matières solides, en particulier des matières semi-conductrices - Google Patents

Procédé de traitement de matières solides, en particulier des matières semi-conductrices

Info

Publication number
FR1270317A
FR1270317A FR840998A FR840998A FR1270317A FR 1270317 A FR1270317 A FR 1270317A FR 840998 A FR840998 A FR 840998A FR 840998 A FR840998 A FR 840998A FR 1270317 A FR1270317 A FR 1270317A
Authority
FR
France
Prior art keywords
materials
treatment
particular semiconductor
solid
semiconductor materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR840998A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1270317A publication Critical patent/FR1270317A/fr
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • C30B23/06Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066Heating of the material to be evaporated
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
FR840998A 1959-10-13 1960-10-12 Procédé de traitement de matières solides, en particulier des matières semi-conductrices Expired FR1270317A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL244298 1959-10-13

Publications (1)

Publication Number Publication Date
FR1270317A true FR1270317A (fr) 1961-08-25

Family

ID=19751976

Family Applications (1)

Application Number Title Priority Date Filing Date
FR840998A Expired FR1270317A (fr) 1959-10-13 1960-10-12 Procédé de traitement de matières solides, en particulier des matières semi-conductrices

Country Status (6)

Country Link
CH (1) CH442236A (fr)
DE (1) DE1240816B (fr)
ES (1) ES261609A1 (fr)
FR (1) FR1270317A (fr)
GB (1) GB962166A (fr)
NL (1) NL244298A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1258397B (de) * 1962-11-15 1968-01-11 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung durch einkristallines Aufwachsen halbleitender Schichten mittels Transportreaktion

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1273330B1 (fr) * 2000-03-23 2008-02-13 Nippon Steel Chemical Co., Ltd. Procede de purification par sublimation et appareil associe

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (fr) * 1951-03-07 1900-01-01
BE510303A (fr) * 1951-11-16
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1258397B (de) * 1962-11-15 1968-01-11 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung durch einkristallines Aufwachsen halbleitender Schichten mittels Transportreaktion

Also Published As

Publication number Publication date
NL244298A (fr)
ES261609A1 (es) 1960-12-01
CH442236A (de) 1967-08-31
DE1240816B (de) 1967-05-24
GB962166A (en) 1964-07-01

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