GB490550A - An improved process for the production of cuprous oxide rectifier elements - Google Patents

An improved process for the production of cuprous oxide rectifier elements

Info

Publication number
GB490550A
GB490550A GB5439/37A GB543937A GB490550A GB 490550 A GB490550 A GB 490550A GB 5439/37 A GB5439/37 A GB 5439/37A GB 543937 A GB543937 A GB 543937A GB 490550 A GB490550 A GB 490550A
Authority
GB
United Kingdom
Prior art keywords
production
rectifier elements
improved process
cuprous oxide
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5439/37A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB490550A publication Critical patent/GB490550A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164—Oxidation and subsequent heat treatment of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Chemical And Physical Treatments For Wood And The Like (AREA)
  • Lubricants (AREA)

Abstract

Cuprous-oxide rectifier elements are made by heating copper elements to incandescence in air from 960-1040 DEG C., subjecting them to an intermediate treatment lasting for at least 30 minutes at a temperature from 300-600 DEG C. in a cooling oven and then quenching them in a liquid whose temperature is above 25 DEG C. but below that of the elements at the end of the intermediate treatment. The latter may last from 30 to 120 minutes and the upper limit of the quenching liquid may be 100 DEG C. Water, melted paraffin or melted wood-metal are suitable quenching liquids.
GB5439/37A 1936-02-27 1937-02-23 An improved process for the production of cuprous oxide rectifier elements Expired GB490550A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES121788D DE668883C (en) 1936-02-27 1936-02-27 Process for making copper oxide rectifier elements

Publications (1)

Publication Number Publication Date
GB490550A true GB490550A (en) 1938-08-17

Family

ID=7535657

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5439/37A Expired GB490550A (en) 1936-02-27 1937-02-23 An improved process for the production of cuprous oxide rectifier elements

Country Status (3)

Country Link
DE (1) DE668883C (en)
FR (1) FR818370A (en)
GB (1) GB490550A (en)

Also Published As

Publication number Publication date
FR818370A (en) 1937-09-24
DE668883C (en) 1938-12-12

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