DE668883C - Process for making copper oxide rectifier elements - Google Patents

Process for making copper oxide rectifier elements

Info

Publication number
DE668883C
DE668883C DES121788D DES0121788D DE668883C DE 668883 C DE668883 C DE 668883C DE S121788 D DES121788 D DE S121788D DE S0121788 D DES0121788 D DE S0121788D DE 668883 C DE668883 C DE 668883C
Authority
DE
Germany
Prior art keywords
copper oxide
rectifier elements
oxide rectifier
making copper
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES121788D
Other languages
German (de)
Inventor
Georg Hoppe
Dipl-Ing Ernst Siebert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to DES121788D priority Critical patent/DE668883C/en
Priority to GB5439/37A priority patent/GB490550A/en
Priority to FR818370D priority patent/FR818370A/en
Application granted granted Critical
Publication of DE668883C publication Critical patent/DE668883C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164—Oxidation and subsequent heat treatment of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Chemical And Physical Treatments For Wood And The Like (AREA)
  • Lubricants (AREA)

Description

Verfahren zum Herstellen von Kupferoxydul-Gleichrichterelementen Es ist ein Verfahren zum Herstellen von Kupferoxydul-Gleichrichterelementen bekannt, nach welchem man auf einem Kupferkörper durch Erhitzung unter Luftzutritt eine Oxydulschicht bildet und ihn dann zweistufig in der Weise abkühlt, daß man ihn zunächst in einem Kühlofen kurzzeitig von der Oxydationstemperatur (etwa iooo° C) auf eine mittlere Temperatur (etwa 6oo° C) herunterkühlt und schließlich in kaltem Wasser abschreckt. Es soll auf diese Weise nicht nur eine besonders gleichmäßige und dichte, sondern vor allem eine an dem Kupferkörper festhaftende Oxydulschicht erzielt werden.Method of making copper oxide rectifier elements Es a method for producing copper oxide rectifier elements is known, after which a layer of oxide is formed on a copper body by heating it with the admission of air forms and then cools it in two stages in such a way that it is first in one Cooling furnace briefly from the oxidation temperature (about 100 ° C) to a medium one Temperature (about 600 ° C) cools down and finally quenched in cold water. In this way it should not only be particularly even and dense, but above all an oxide layer adhering firmly to the copper body can be achieved.

Mit diesem bekannten Verfahren lassen sich Kupferoxydulgleichrichter mit einer Sperrspannung von etwa 5 Volt pro Element herstellen, die einen verhältnismäßig niedrigen Widerstand in der Stromdurchflußrichtung aufweisen und bei gutem Wirkungsgrad mit verhältnismäßig hoher Stromstärke belastbar sind.This known method can be used for copper oxide rectifiers with a reverse voltage of about 5 volts per element, which is a relatively have low resistance in the direction of current flow and with good efficiency can be loaded with a relatively high amperage.

Es ist auch bekannt, daß man I#',upferoxydul-Gleichrichterelemente für eine höhere als die normale Sperrspannung, und zwar für 15 Volt und mehr, erzielen kann, wenn man die unter Luftzutritt geglühten Kupferscheiben sich allmählich in Luft bis auf Raumtemperatur abkühlen läßt. Die auf dieseWeise hergestellten Gleichrichterelemente weisen einen höheren Widerstand in der Durchlaßrichtung als die Scheiben für normale Sperrspannung auf, sind strommäßig weniger hoch belastbar und ergeben bei gleicher Leistung wie die normalen Scheiben einen gleichen Wirkungsgrad.It is also known to use I # ', copper oxide rectifier elements for a higher than normal reverse voltage, namely for 15 volts and more can, if the copper disks, annealed with air, are gradually turned into Allow air to cool to room temperature. The rectifying elements made in this way have a higher resistance in the forward direction than the discs for normal Reverse voltage on, are less highly resilient in terms of current and result in the same Performance as the normal disks have the same efficiency.

Die Erfindung bezweckt, Kupferoxydul-Gleichrichterelemente zu schaffen, deren Sperrspannung weit über dem normalen Wert von etwa 5 Volt pro Element liegt und die trotzdem einen kleinen Durchlaßwiderstand aufweisen. Da diese Elemente strom- und spannungsmäßig hoch belastbar sind, können sie höher ausgenutzt werden und ergeben einen besseren Wirkungsgrad als die durch kurzzeitige Anwendung einer Zwischentemperatur in einem Kühlofen und nachfolgendes Abschrecken in kaltem Wasser erzielten Gleichrichterelemente für normale Sperrspannung. Dieser Zweck wird gemäß der Erfindung dadurch erreicht, daß man die unter Luftzutritt bei etwa iooo° C geglühten Kupferscheiben im unmittelbaren Anschluß an die Glühung einer 30 Minuten oder länger dauernden Zwischenbehandlung in einem an sich bekannten Kühlofen bei 300 bis 6oo° C unterwirft und sie darauf in einem warmen, flüssigen Mittel abschreckt. Als Abschreckmittel ist sowohl warmes Wasser als auch geschmolzenes Paraffin oder Wood-Metall geeignet.The aim of the invention is to create copper oxide rectifier elements whose reverse voltage is well above the normal value of about 5 volts per element and which nevertheless have a low forward resistance. Since these elements can withstand high currents and voltages, they can be used to a greater extent and result in better efficiency than the rectifier elements for normal reverse voltage achieved by briefly applying an intermediate temperature in a cooling furnace and subsequent quenching in cold water. This purpose is achieved according to the invention by subjecting the copper disks annealed with air at about 100 ° C. immediately after the annealing to an intermediate treatment lasting 30 minutes or longer in a cooling furnace known per se at 300 to 600 ° C. and then subjecting them quenching in a warm liquid medium. Both warm water and molten paraffin or Wood metal are suitable as quenching agents.

Die günstige Wirkung des vorstehend beschriebenen Verfahrens dürfte darauf zurückzuführen sein, daß infolge der verlängerten Zwischenhandlung (30 oder mehr Minuten, statt wie bisher nur 5- bis 8 Minuten) ein Sauerstoffausgleich herbeigeführt wird; der den Scheiben höchste Zeitfähigkeit ve und daß infolge des verzögerten Ab im warmen Mittel eine hohe SperrfÄ'81,a. erzielt wird.The beneficial effect of the method described above can be attributed to the fact that, as a result of the prolonged intermediate action (30 or more minutes, instead of only 5 to 8 minutes as before), an oxygen balance is brought about; the the disks have the highest time capacity and that as a result of the delayed Ab in the warm mean a high blocking factor 81, a. is achieved.

Claims (1)

PATENTANSPRUCH: Verfahren zum Herstellen von Kupferoxydul-Gleichrichterelementen durch kurzzeitiges Glühen von Kupferscheiben unter Luftzutritt bei etwa iooo° C, anschließende Zwischenkühlung und Abschrecken, dadurch gekennzeichnet, daß die oxydierten Scheiben, nachdem sie im unmittelbaren Anschluß an die Glühung einer 3o Minuten oder länger dauernden Zwischenbehandlung bei 3oo bis 6oo° C in einem an sich bekannten Kühlofen unterworfen worden sind, in einem warmen, flüssigen Mittel (z. B. heißem Wasser, geschmolzenem Paraffin oder verflüssigtem Wood-Metall) abgeschreckt werden.PATENT CLAIM: Process for the production of copper oxide rectifier elements by briefly annealing copper washers with air admission at around 100 ° C, subsequent intermediate cooling and quenching, characterized in that the oxidized Slices after they were immediately following the annealing for a 30 minute period or longer intermediate treatment at 3oo to 6oo ° C in a known per se Cooling furnace have been subjected to a warm, liquid medium (e.g. hot Water, molten paraffin or liquefied Wood metal).
DES121788D 1936-02-27 1936-02-27 Process for making copper oxide rectifier elements Expired DE668883C (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DES121788D DE668883C (en) 1936-02-27 1936-02-27 Process for making copper oxide rectifier elements
GB5439/37A GB490550A (en) 1936-02-27 1937-02-23 An improved process for the production of cuprous oxide rectifier elements
FR818370D FR818370A (en) 1936-02-27 1937-02-25 Process for manufacturing cuprous oxide rectifying elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES121788D DE668883C (en) 1936-02-27 1936-02-27 Process for making copper oxide rectifier elements

Publications (1)

Publication Number Publication Date
DE668883C true DE668883C (en) 1938-12-12

Family

ID=7535657

Family Applications (1)

Application Number Title Priority Date Filing Date
DES121788D Expired DE668883C (en) 1936-02-27 1936-02-27 Process for making copper oxide rectifier elements

Country Status (3)

Country Link
DE (1) DE668883C (en)
FR (1) FR818370A (en)
GB (1) GB490550A (en)

Also Published As

Publication number Publication date
FR818370A (en) 1937-09-24
GB490550A (en) 1938-08-17

Similar Documents

Publication Publication Date Title
DE831453C (en) Copper alloys
DE668883C (en) Process for making copper oxide rectifier elements
DE732188C (en) Magnesium alloy
DE1264476B (en) Process to reduce the power loss and to increase the permeability of silicon steel sheet
DE563639C (en) Process for the manufacture of copper oxide rectifiers
DE691061C (en) nduesen
DE763878C (en) Process for manufacturing copper oxide rectifier elements
DE543994C (en) Process for the manufacture of rectifier elements
DE765294C (en) Process for cold rolling silicon steel
DE723526C (en) Process for the manufacture of copper oxide rectifiers
DE624114C (en) Method of manufacturing a copper oxide rectifier
DE971095C (en) Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors and particularly high voltage load capacity in the reverse direction
DE851227C (en) Selenium rectifier
DE738418C (en) Process for making metal oxide rectifier elements
DE676677C (en) Magnetic core or Krarup windings with little instability
DE755790C (en) Process for the manufacture of copper oxide rectifier plates
DE863965C (en) Process for the production of AC rectifiers according to the dry surface contact system
DE536910C (en) Process for making the electrodes of dry metal rectifiers
DE665183C (en) Process for the production of electrical resistance bodies from uranium dioxide
DE833088C (en) Method of manufacturing AC rectifiers
DE543136C (en) Process for the manufacture of plates for copper oxide rectifiers
DE441071C (en) Lead bearing metal
DE883476C (en) Process for reducing the aging of selenium rectifiers with a cover electrode applied to the selenium layer, for example made of a tin-cadmium alloy
DE740517C (en) Process for the heat treatment of austenitic materials in a tower furnace
DE851981C (en) Process for the production of copper oxide dry rectifiers