DE971095C - Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors and particularly high voltage load capacity in the reverse direction - Google Patents
Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors and particularly high voltage load capacity in the reverse directionInfo
- Publication number
- DE971095C DE971095C DES19635D DES0019635D DE971095C DE 971095 C DE971095 C DE 971095C DE S19635 D DES19635 D DE S19635D DE S0019635 D DES0019635 D DE S0019635D DE 971095 C DE971095 C DE 971095C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- production
- thallium
- liquid
- unipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 25
- 229910052711 selenium Inorganic materials 0.000 title claims description 25
- 239000011669 selenium Substances 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 20
- 239000004020 conductor Substances 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 229940065287 selenium compound Drugs 0.000 title claims description 3
- 150000003343 selenium compounds Chemical class 0.000 title claims description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 13
- 229910052716 thallium Inorganic materials 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 10
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 4
- -1 thallium ions Chemical class 0.000 claims description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000009736 wetting Methods 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 1
- 150000003476 thallium compounds Chemical class 0.000 description 1
- 229910003438 thallium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
. Verfahren zur Herstellung unipolarer Leiter mit Selen oder Selenverbindungen als Halbleiter und besonders hoher Spannungsbelastbarkeit in der Sperrichtung Nach dem im Hauptpatent beschriebenen Verfahren können unipolare Leiter mit Selen als Halbleiter hergestellt werden, die in Sperrichtung mit einer bedeutend. höheren als der bisher für diese Gleichrichter üblichen Spannung von r8 bis 2o Volt je Gleichrichterscheibe belastet werden können.. Process for the production of unipolar conductors with selenium or selenium compounds as a semiconductor and particularly high voltage load capacity in the reverse direction to the process described in the main patent can use unipolar conductors with selenium as Semiconductors are manufactured with a significant reverse bias. higher than the voltage of r8 to 20 volts per rectifier disk that was previously used for these rectifiers can be charged.
Bei dem im Hauptpatent angegebenen Verfahren werden Thalliumatome vor dem Aufbringen der Gegenelektrode in die Oberfläche der kristallinen Selenschicht in der Weise eingelagert, daß die Selenoberfläche der Einwirkung von Thalliumdampf oder thalliumhaltigem Dampf ausgesetzt und darauf einer Wärmebehandlung unterzogen wird. Durch die Anwendung dieses Verfahrens wird eine für die Ausbildung einer Sperrschicht besonders günstige Art der Einlagerung der Thalliumatome in das Selengitter, ein gewissermaßen eingefrorener Gleichgewichtszustand zwischen Selen und Thallium erreicht. Das Verfahren des Patentes 970 900 ist eine Weiterbildung des Verfahrens des Hauptpatentes und dient ebenfalls einer für die Ausbildung einer besonders guten Sperrschicht günstigen Einlagerung von Metallatomen, insbesondere von Thalliumatomen, in die Oberfläche von Selenschichten.In the process specified in the main patent, thallium atoms before applying the counter electrode in the surface of the crystalline selenium layer stored in such a way that the selenium surface is exposed to thallium vapor or exposed to steam containing thallium and then subjected to a heat treatment will. By using this process one is able to form a barrier layer a particularly favorable type of incorporation of the thallium atoms in the selenium lattice a kind of frozen equilibrium between selenium and thallium is reached. That The method of patent 970 900 is a further development of the method of the main patent and also serves one for the formation of a particularly good barrier layer favorable incorporation of metal atoms, especially of thallium atoms, in the Surface of selenium layers.
Das Verfahren beruht darauf, daß die Thalliumatome mit Hilfe einer Flüssigkeit mit der Selenoberfläche in Berührung und zum Eindiffundieren in die Selenschicht gebracht werden.The method is based on the fact that the thallium atoms with the help of a Liquid in contact with the selenium surface and to diffuse into the Selenium layer are brought.
Das Verfahren kann in der Weise ausgeübt werden, daß eine Thalliumverbindung, z. B. Thalliumoxyd, in destilliertem Wasser gelöst wird. Die Lösung ist basisch. Das Thallium kann aber auch unmittelbar in Wasser oxydiert und dabei gelöst werden. In diesem Falle ist es erforderlich, daß ein kräftiger Luftstrom durch das Wasser gegen das Thallium geblasen wird. In das so gewonnene thalliumionenhaltige Wasser werden die nach einem bekannten Verfahren in den graukristallinen Zustand übergeführten Selenschichten vor dem Aufbringen einer Gegenelektrode eingetaucht, oder das thalliumionenhaltige Wasser wird auf die Oberfläche der Selenschichten in feiner Verteilung aufgestäubt. Die so aufgebrachten Thalliumatome diffundieren dann in die Selenoberfläche ein. Dieser Vorgang kann bei Zimmertemperatur oder auch bei erhöhten Temperaturen erfolgen. Die Wärmebehandlung kann während oder nach dem Aufbringen der thalliumionenhaltigen Flüssigkeit auf die Selenschicht, muß aber jedenfalls vor dem Aufbringen der Gegenelektrode vorgenommen werden. Die Eigenschaften des nach diesem Verfahren hergestellten Selengleichrichters lassen sich durch die Konzentration der Thalliumlösung, die Dauer ihres Einwirkens, die Länge und Temperatur der nachträglichen Wärmebehandlung beeinflussen.The method can be practiced in such a way that a thallium compound, z. B. thallium oxide, is dissolved in distilled water. The solution is basic. The thallium can, however, also be oxidized and dissolved directly in water. In this case it is necessary to have a strong flow of air through the water is blown against the thallium. In the thallium ion-containing water obtained in this way are converted into the gray crystalline state by a known process Selenium layers immersed before the application of a counter electrode, or the one containing thallium ions Water is sprayed on the surface of the selenium layers in fine distribution. The thallium atoms applied in this way then diffuse into the selenium surface. This process can take place at room temperature or at elevated temperatures. The heat treatment can take place during or after the application of the thallium ions Liquid on the selenium layer, but must in any case before the counter electrode is applied be made. The properties of the selenium rectifier made by this process can be determined by the concentration of the thallium solution, the duration of its action, affect the length and temperature of the subsequent heat treatment.
Nach der erfindungsgemäßen Behandlung wird in bekannter Weise die Gegenelektrode auf die Selenschicht aufgebracht.After the treatment according to the invention is in a known manner Counter electrode applied to the selenium layer.
Die nach dem erfindungsgemäßen Verfahren in eine Selenschicht einzubringenden Metalle können auch in einer anderen geeigneten Flüssigkeit gelöst werden.Those to be introduced into a selenium layer by the method according to the invention Metals can also be dissolved in another suitable liquid.
Indium sowie Alkali- oder Erdalkalimetalle sind für die Aufbringung nach dem neuen Verfahren mittels einer Flüssigkeit ebenfalls geeignet.Indium as well as alkali or alkaline earth metals are for the application also suitable according to the new process by means of a liquid.
Nach dem neuen Verfahren hergestellte Selengleichrichter können Spannungen von 8o und mehr Volt effektiv mit einer Gleichrichterscheibe sperren.Selenium rectifiers manufactured using the new process can reduce voltages of 8o and more volts effectively block with a rectifier disk.
Das Verfahren kann auch bei der Herstellung von unipolaren Selenzellen, die als Selenphotoelemente Verwendung finden sollen, angewendet werden.The process can also be used in the production of unipolar selenium cells, which are to be used as selenium photo elements.
Claims (3)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES19638D DE970900C (en) | 1944-05-24 | 1944-05-25 | Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors |
| DES19635D DE971095C (en) | 1944-05-24 | 1944-06-28 | Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors and particularly high voltage load capacity in the reverse direction |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0019638 | 1944-05-24 | ||
| DES19638D DE970900C (en) | 1944-05-24 | 1944-05-25 | Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors |
| DES0019635 | 1944-06-27 | ||
| DES19635D DE971095C (en) | 1944-05-24 | 1944-06-28 | Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors and particularly high voltage load capacity in the reverse direction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE971095C true DE971095C (en) | 1958-12-11 |
Family
ID=34812120
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES19638D Expired DE970900C (en) | 1944-05-24 | 1944-05-25 | Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors |
| DES19635D Expired DE971095C (en) | 1944-05-24 | 1944-06-28 | Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors and particularly high voltage load capacity in the reverse direction |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES19638D Expired DE970900C (en) | 1944-05-24 | 1944-05-25 | Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| DE (2) | DE970900C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE975925C (en) * | 1952-09-17 | 1962-12-13 | Siemens Ag | Process for the production of a defined, gradedly distributed fault point content in a semiconductor body |
| DE1166220B (en) * | 1958-07-23 | 1964-03-26 | Philips Nv | Thermoclectric or electrothermal arrangement, in particular Peltier cooling arrangement, in which a semiconducting connection is used for at least one thermocouple limb |
| DE1219591B (en) * | 1962-04-07 | 1966-06-23 | Licentia Gmbh | Method for applying a uniform thallium selenide layer to the selenium layer of a rectifier |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT131780B (en) * | 1930-08-07 | 1933-02-10 | Erwin Falkenthal | Photoelectric cell and method of making the same. |
| DE667750C (en) * | 1932-04-16 | 1938-11-19 | Siemens & Halske Akt Ges | Process for making unipolar barriers |
| DE739904C (en) * | 1935-02-07 | 1943-10-07 | Philips Patentverwaltung | Process for the production of the barrier layer of a selenium rectifier |
| NL95164C (en) * | 1938-09-09 | |||
| BE445828A (en) * | 1941-06-20 |
-
1944
- 1944-05-25 DE DES19638D patent/DE970900C/en not_active Expired
- 1944-06-28 DE DES19635D patent/DE971095C/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE970900C (en) | 1958-11-13 |
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