DE1143374B - Process for removing the surface of a semiconductor crystal and subsequent contacting - Google Patents
Process for removing the surface of a semiconductor crystal and subsequent contactingInfo
- Publication number
- DE1143374B DE1143374B DES45100A DES0045100A DE1143374B DE 1143374 B DE1143374 B DE 1143374B DE S45100 A DES45100 A DE S45100A DE S0045100 A DES0045100 A DE S0045100A DE 1143374 B DE1143374 B DE 1143374B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- contacting
- cathode sputtering
- carried out
- semiconductor crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000000034 method Methods 0.000 title claims description 22
- 239000013078 crystal Substances 0.000 title claims description 13
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000000889 atomisation Methods 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000003792 electrolyte Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Verfahren zur Abtragung der Oberfläche eines Halbleiterkristalls und anschließenden Kontaktierung Ein bekanntes Verfahren zur Herstellung einer Sperrandschicht aufHalbleiterkristallen,beispielsweise aus Germanium, Silicium oder halbleitenden Legierungen und/oder Verbindungen, besteht darin, daß die Halbleiteroberfläche in einem ersten Arbeitsgang elektrolytisch abgetragen und anschließend in einem zweiten Arbeitsgang elektrolytisch kontaktiert wird. Dies kann z. B. derart geschehen, daß man einen aus einer Düse austretenden Strahl eines aus einer wässerigen Lösung eines geeigneten Salzes eines Kontaktie-Irungsmetalls bestehenden Elektrolyten auf die zu be- arbeitende Stelle der Halbleiteroberfläche richtet und dabei während des ersten Arbeitsganges den Halbleiter an ein Anodenpotential, den Elektrolyten an ein Kathodenpotential legt, so daß der Elektrolyt eine abtragende Wirkung auf die Halbleiteroberfläche ausübt. Nach Beendigung des Abtragungsvorgandes wird ohne den Elektrolytstrahl zu unterbrechen umgepolt, meo daß an dem nunmehr als Kathode geschalteten Halbleiter das im Elektrolyten gelöste Metall an der Halbleiteroberfläche in elementarem Zustand niedergeschlagen wird.Method for removing the surface of a semiconductor crystal and subsequent contacting A known method for producing a barrier layer on semiconductor crystals, for example from germanium, silicon or semiconducting alloys and / or compounds, consists in removing the semiconductor surface electrolytically in a first operation and then in a second operation is contacted electrolytically. This can e.g. B. done in such a way that one directs a jet exiting a nozzle of an electrolyte consisting of an aqueous solution of a suitable salt of a contacting metal to the area to be processed on the semiconductor surface and during the first operation the semiconductor to an anode potential, the Electrolyte applies to a cathode potential, so that the electrolyte has an abrasive effect on the semiconductor surface. After the ablation process has ended, the polarity is reversed without interrupting the electrolyte jet, meaning that the metal dissolved in the electrolyte is deposited on the semiconductor surface in an elemental state on the semiconductor, which is now connected as a cathode.
Dieses Verfahren ist an sich einfach durchzuführen. Grundsätzlich muß aber bei allen elektrolytischen Verfahren, auch wenn sie derart durchgeführt werden, daß die Bearbeitungsstelle nach erfolgter Abtragung nicht mehr mit Luft in Berührung kommt, folgendes in Betracht gezogen werden: Je nach Art des verwendeten Elektrolyten findet eine spezifische chemische Wirkung mit dem Halbleiterstab auch im stromlosen Zustand statt. So ist z. B. das den Elektrolyten verdünnende Wasser bei den meisten Halbleitem ein Oxydationsmittel, welches den Halbleiter - wenn auch nur in sehr geringem Maße - oxydiert. Solange der Halbleiter am Anodenpotential liegt, wird eine Oxydation durch den Abtragungsvorgang unterbunden. Während und nach dem Umpolen ist jedoch eine solche Oxydation möglich. Wenn auch die Oxydschichten, die auf Grund der Anwendung eines Elektrolyten entstehen können, extrem dünn sind. so schieben sie sich dennoch zwischen der Metallisierung und dem eigentlichen Halbleiter ein und führen auf diese Weise zu einer Beeinträchtigung der elektrischen Kontakte, die vor allem deswegen nicht unterschätzt werden darf, weil die Stärke dieser Oxydschichten von Fall zu Fall wechselt.This procedure is in itself easy to perform. In principle, however, the following must be taken into account in all electrolytic processes, even if they are carried out in such a way that the processing point no longer comes into contact with air after removal has taken place: Depending on the type of electrolyte used, there is also a specific chemical effect with the semiconductor rod takes place in the de-energized state. So is z. As the electrolyte diluting water in most Halbleitem an oxidizer which the semiconductor - if only to a very limited extent - oxidized. As long as the semiconductor is at the anode potential, oxidation is prevented by the erosion process. However, such oxidation is possible during and after polarity reversal. Even if the oxide layers that can arise due to the use of an electrolyte are extremely thin. they slide in between the metallization and the actual semiconductor and in this way lead to an impairment of the electrical contacts, which should not be underestimated because the thickness of these oxide layers changes from case to case.
Die Erfindung bezieht sich auf ein Verfahren zur Abtragung der Oberfläche eines Halbleiterkristalls und anschließenden Kontaktierung auf elektrischem Wege unter Umpolung. Sie schlägt vor, daß die Abtragung und Kontaktierung mittels Kathodenzerstäubung im Hochvakuum oder verdünnter Gasatmosphäre durchgeführt wird.The invention relates to a method for removing the surface a semiconductor crystal and subsequent electrical contacting with polarity reversal. She suggests that the removal and contacting by means of cathode sputtering is carried out in a high vacuum or a dilute gas atmosphere.
Gemäß der Erfindung lassen sich also im Vergleich zu einem elektrolytischen Verfahren besser definierte Verfahrensbedingungen bei der Oberflächenbehandlung von Halbleiterkristallen erreichen, da sowohl die Abtragung der Halbleiteroberfläche als auch die anschließende Erzeugung einer Sperrschicht aui ihr mittels einer im Hochvakuum oder in einer verdünnten Gasatmosphäre vor sich gehenden, eine Kathodenzerstäubung bewirkenden elektrischen Entladung durchgeführt wird. Dabei empfiehlt sich insbesondere auch die Anwendung einer verdünnten Wasserstoff- und/oder Halogenatmosphäre, z. B. bei Silicium die Anwendung einer Chloratmosphäre. Gewisse Gase, z. B. Halogene, wirken bezüglich des Abtragungsvorganges besonders rasch, da sich bei ihrer Anwendung neben der durch den Aufprall von Ionen auf die zu zerstäubende Halbleiteroberfläche hervorgerufenen Zerstäubung noch eine chemische Abtragungswirkung überlagert. Eine solche chemische Kathodenzerstäubung kann daher den Prozeß beachtlich beschleunigen. Insbesondere bei der Verwendung von Chlor als Behandlungsatmosphäre ist diese chemische Kathodenzerstäubung besonders beachtlich, weil durch die Wirkung der Entladung die Moleküle dieses Gases in Atome zerlegt werden, denen eine besonders hohe Aktivität zukommt. Die durch die Einwirkung entstehenden Verbindungen sind mindestens unter den Bedingungen der Entladung vollkommen flüchtig und können daher eine Verunreinigung der zu behandelnden Oberfläche nicht bewirken. Diese Wirkung ist sowohl für eine nachfolgende Dotierung mit Störstellen, beispielsweise Donatoren, Akzeptoren, Rekombinationszentren und/oder Haftstellen als auch Legierungsbildung mit einem Metall wichtig.According to the invention, compared to an electrolytic Process better defined process conditions for surface treatment of semiconductor crystals as both the removal of the semiconductor surface as well as the subsequent creation of a barrier layer on it by means of an im High vacuum or in a dilute gas atmosphere going on, a cathode sputtering causing electrical discharge is carried out. It is particularly recommended also the use of a dilute hydrogen and / or halogen atmosphere, e.g. B. in the case of silicon, the use of a chlorine atmosphere. Certain gases, e.g. B. halogens, act particularly quickly with regard to the removal process, since they are used in addition to that caused by the impact of ions on the semiconductor surface to be sputtered induced atomization is superimposed on a chemical abrasive effect. One such chemical sputtering can therefore speed up the process considerably. In particular when chlorine is used as the treatment atmosphere, this is chemical Cathode sputtering is particularly noticeable because the effect of the discharge causes the Molecules of this gas are broken down into atoms, which have a particularly high activity comes to. The connections created by the action are at least below completely volatile under the conditions of discharge and can therefore become an impurity on the surface to be treated. This effect is for both one subsequent doping with imperfections, e.g. donors, Acceptors, recombination centers and / or traps as well as alloy formation with a metal important.
Während des ersten Verfahrensschrittes wird der Halbleiter als Kathode geschaltet. Nach Beendigung der gewünschten Abtragung wird zur Erzeugung einer sperrenden oder nicht sperrenden Kontaktierung eine Metallschicht durch Umpolung bei gegebenenfalls gleichen atmosphärischen Bedingungen durchgeführt. Zu diesem Zweck besteht die dem Halbleiter gegengeschaltete, nunmehr an Kathodenpotential liegende Elektrode mindestens an ihrer Oberfläche aus dem beabsichtigten Kontaktierungsmetall. Da nunmehr an dieser Elektrode Kathodenzerstäubung auftritt, schlägt sich aus ihr das Kathodenmetall auf der Halbleiteroberfläche nieder. Gegebenenfalls kann bei Verwendung einer entsprechenden Gasatmosphäre das Kontaktierungsmetall zum Teil aus dieser stammen.During the first process step, the semiconductor is used as the cathode switched. After completion of the desired ablation, a blocking is created or non-blocking contacting a metal layer by polarity reversal if necessary carried out under the same atmospheric conditions. For this purpose there is the dem Semiconductor counter-connected electrode now at least at cathode potential on their surface from the intended contacting metal. Since now on this Electrode sputtering occurs, the cathode metal is knocked out from it down on the semiconductor surface. If necessary, when using a corresponding Gas atmosphere, the contacting metal come in part from this.
Das Verfahren nach der Erfindung ist zur Herstellung von Gleichrichtern und Transistoren und anderen Halbleiteranordnungen geeignet.The method according to the invention is for the manufacture of rectifiers and transistors and other semiconductor devices.
Das Verfahren der Kathodenzerstäubung wurde bereits an Goldplättchen vorgenommen, um deren Kristallstruklur freizulegen. Die Anwendung zur Behandlung von Halbleiterkristallen ist jedoch neu. Durch ihre Anwendung wird das an der Oberfläche solcher Kristalle zumeist vorhandene gestörte Kristallgitter entfernt, was im allgemeinen nach kurzer Zeit erreicht wird. Vorhandenes Oxyd wird dabei nicht nur beseitigt, sondern auch abgebaut. Die während des Abtragungsvorganges zerstäubten Halbleiterteilchen schlagen sich teils an den Gefäßwänden, teils an der Anode nieder. Wird die Anode nach Umpolung zur Kathode und ihrerseits zerstäubt, so gelangt ein Teil der vorher auf ihr niedergeschlagenen Halbleiteratome wieder zum Halbleiterkristall und wird nunmehr unter Bildung eines ungestörten Kristallgitters niedergeschlagen. Diese Tatsache begünstigt die Anlagerung der nachkommenden, aus der Kathode stamme'nden Metallatome, da die Bindungskräfte dieser frisch angelagerten Halbleiteratome durch den Einbau in die Halbleiteroberfläche nur zum Teil abgesättigt sind.The process of cathode sputtering was already carried out on gold platelets made to expose their crystal structure. The application for treatment of semiconductor crystals, however, is new. Their application makes it on the surface such crystals mostly removed disturbed crystal lattice present, which in general is reached after a short time. Existing oxide is not only removed, but also dismantled. The semiconductor particles atomized during the removal process are partly deposited on the vessel walls and partly on the anode. Will the anode after polarity reversal to the cathode and in turn sputtered, a part of the previously reached The semiconductor atoms deposited on it turn back into a semiconductor crystal and become now deposited with the formation of an undisturbed crystal lattice. These The fact favors the accumulation of the following, originating from the cathode Metal atoms, because the binding forces of these freshly attached semiconductor atoms through the integration into the semiconductor surface are only partially satisfied.
Sekundärreaktionen, die, wie z. B. die Bildung eines neuen Oxydes, beim Arbeiten mit elektrolytischen Flüssigkeiten nicht zu vermeiden sind, fallen bei Ausübung des erfindungsgemäßen Verfahrens fort. Damit werden Kontakte optimaler Eigenschaften erhalten. Insbesondere gilt dies auch infolge des gemäß der Erfindung vorgeschlagenen Metallisierungsprozesses. Während elektrolytisch aufgebrachte Metallüberzüge häufig schwammig und porös sind und auf ihrer Unterlage schlecht haften, werden bei dem erfindungsgemäßen Verfahren die feinverte-ilten Metallpartikehl mit hoher Geschwindigkeit auf der störungsfreien Halbleiteroberfläche niedergeschlagen. Dies bewirkt eine äußerst feste Konsistenz der erhaltenen Metallisierung, was auf die Güte der Kontaktierung nicht ohne Einfluß sein kann.Secondary reactions, such as. B. the formation of a new oxide, cannot be avoided when working with electrolytic liquids when exercising the method according to the invention. This makes contacts more optimal Properties preserved. In particular, this also applies as a result of the according to the invention proposed metallization process. While electrolytically applied metal coatings are often spongy and porous and adhere poorly to their base in the process according to the invention, the finely divided metal particles with high Speed deposited on the interference-free semiconductor surface. this causes an extremely solid consistency of the metallization obtained, which is due to the The quality of the contact cannot be without influence.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES45100A DE1143374B (en) | 1955-08-08 | 1955-08-08 | Process for removing the surface of a semiconductor crystal and subsequent contacting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES45100A DE1143374B (en) | 1955-08-08 | 1955-08-08 | Process for removing the surface of a semiconductor crystal and subsequent contacting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1143374B true DE1143374B (en) | 1963-02-07 |
Family
ID=7485398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES45100A Pending DE1143374B (en) | 1955-08-08 | 1955-08-08 | Process for removing the surface of a semiconductor crystal and subsequent contacting |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1143374B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1765582B1 (en) * | 1967-06-15 | 1971-12-16 | Ibm | DEVICE FOR CATHODE SPRAYING AND SUBSEQUENT VAPORIZATION |
| DE1690276B1 (en) * | 1966-06-30 | 1972-05-04 | Texas Instruments Inc | CATHODE DUST PROCESS FOR PRODUCING OHMSHE CONTACTS ON A SEMICONDUCTOR SUBSTRATE AND DEVICE FOR PERFORMING THE PROCESS |
| DE2213037A1 (en) * | 1971-03-19 | 1972-10-05 | Itt Ind Gmbh Deutsche | Process for the production of semiconductor components using dry-etched techniques |
| US4339300A (en) * | 1977-07-25 | 1982-07-13 | Noble Lowell A | Process for smoothing surfaces of crystalline materials |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE668639C (en) * | 1932-07-20 | 1938-12-07 | Bernhard Berghaus | Process for the annealing of metal objects |
-
1955
- 1955-08-08 DE DES45100A patent/DE1143374B/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE668639C (en) * | 1932-07-20 | 1938-12-07 | Bernhard Berghaus | Process for the annealing of metal objects |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1690276B1 (en) * | 1966-06-30 | 1972-05-04 | Texas Instruments Inc | CATHODE DUST PROCESS FOR PRODUCING OHMSHE CONTACTS ON A SEMICONDUCTOR SUBSTRATE AND DEVICE FOR PERFORMING THE PROCESS |
| DE1765582B1 (en) * | 1967-06-15 | 1971-12-16 | Ibm | DEVICE FOR CATHODE SPRAYING AND SUBSEQUENT VAPORIZATION |
| DE2213037A1 (en) * | 1971-03-19 | 1972-10-05 | Itt Ind Gmbh Deutsche | Process for the production of semiconductor components using dry-etched techniques |
| US4339300A (en) * | 1977-07-25 | 1982-07-13 | Noble Lowell A | Process for smoothing surfaces of crystalline materials |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3872859T2 (en) | METHOD FOR METALLIZING A SILICATE, QUARTZ, GLASS OR SAPPHIRE SUBSTRATE AND SUBSTRATE OBTAINED THEREFORE. | |
| DE1621599C2 (en) | Device for removing impurities from a metallic layer applied to a semiconductor body in the area of small openings in an insulating layer by cathode sputtering | |
| DE2848691A1 (en) | METHOD AND GAS FOR TREATMENT OF SEMICONDUCTOR COMPONENTS | |
| DE2801218A1 (en) | METHOD FOR ELECTROLYTIC ETCHING OF A RECRISTALLIZED ALUMINUM FILM AND THE USE OF IT | |
| DE2142146A1 (en) | Semiconductor arrangement and method for producing such an arrangement | |
| DE1143374B (en) | Process for removing the surface of a semiconductor crystal and subsequent contacting | |
| DE1160547B (en) | Method for electrolytic etching of a semiconductor component with an essentially single-crystalline semiconductor body and a pn junction emerging on the surface | |
| Essmann et al. | Abhängigkeit der Versetzungsanordnung in Kupfereinkristallen von der Verformungstemperatur/Influence of Deformation Temperature on the Dislocation Arrangement of Copper Single Crystals | |
| DE2404016A1 (en) | METHOD OF MAKING A GAAS PHOTOCATHOD | |
| DE2239145A1 (en) | METHOD FOR TREATMENT OF SEMICONDUCTOR MATERIALS MADE OF III-V COMPOUNDS | |
| DE2327878C3 (en) | Process for etching semiconductor wafers provided with electrodes for semiconductor components | |
| DE2856214A1 (en) | PROCESS FOR PRODUCING A METAL SEMICONDUCTOR CONTACT | |
| DE1671790C3 (en) | Electrolyte carriers for fuel cells and process for their manufacture | |
| DE102015108513A1 (en) | Reduced titanium undercut in the etching process | |
| DE4104881A1 (en) | ETCH SOLUTION FOR WET CHEMICAL PROCESSES OF SEMICONDUCTOR PRODUCTION | |
| DE966905C (en) | Process for the production of electrically asymmetrically conductive systems | |
| DE1119625B (en) | Method for etching the surface of a semiconductor body | |
| DE2937518A1 (en) | SELECTIVE DIFFUSION OF ALUMINUM IN AN OPEN TUBE | |
| DE1071846B (en) | ||
| AT214981B (en) | Process for the surface treatment of semiconductor bodies | |
| DE891300C (en) | Electrically asymmetrical conductive system | |
| EP3303658B1 (en) | Method for producing a diamond electrode and diamond electrode | |
| DE1129795B (en) | Process for the electrolytic surface treatment of semiconductor bodies made of silicon | |
| DE1258235B (en) | Process for the production of an edge zone profiling of silicon wafers that increases the blocking voltage strength | |
| DE1913616C3 (en) | Process for etching a semiconductor wafer attached to a holder |