DE667750C - Process for making unipolar barriers - Google Patents
Process for making unipolar barriersInfo
- Publication number
- DE667750C DE667750C DES104231D DES0104231D DE667750C DE 667750 C DE667750 C DE 667750C DE S104231 D DES104231 D DE S104231D DE S0104231 D DES0104231 D DE S0104231D DE 667750 C DE667750 C DE 667750C
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- treatment
- electrode
- chemical
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 8
- 230000004888 barrier function Effects 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 6
- 229910052792 caesium Inorganic materials 0.000 claims description 5
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000010953 base metal Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000007792 addition Methods 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 7
- 239000005751 Copper oxide Substances 0.000 description 7
- 229910000431 copper oxide Inorganic materials 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910000497 Amalgam Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 1
- 229910001942 caesium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
- H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
- H01L21/165—Reduction of the copper oxide, treatment of the oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Bekannte Verfahren bereiten entweder nur die Kupferoxydulschicht für die Auf bringung der Ableiteelektrode oder für ein nachfolgendes Verfahren zur Erzeugung oder Aufbringung einer Sperrschicht durch Säureätzung vor; z. B. sollen bei diesen bekannten Verfahren schlechtleitendes Kupferoxyd entfernt werden oder die Kupferoxydulschicht durch Abätzen dünner und daher ihre gesamte Leit-Known methods either only prepare the copper oxide layer for application the derivation electrode or for a subsequent process for generation or application a barrier layer by acid etching; z. B. should in these known methods poorly conductive copper oxide can be removed or the copper oxide layer is thinner by etching and therefore its entire conductive
to fähigkeit erhöht werden; auch sollen die infolge der chemischen Umsetzungen bei der Ätzung möglichen starken Temperaturerhöhungen weitgehend verhindert werden,to ability to be increased; also should be the result of the chemical reactions in the Etching possible strong temperature increases are largely prevented,
, damit keine Widerstandserhöhung der Kupferoxydulschicht infolge Temperaturanstieg eintritt.so that there is no increase in resistance of the copper oxide layer occurs as a result of a rise in temperature.
Das erfindungsgemäße Verfahren zur Herstellung unipolarer Sperrschichten auf Halbleitern zur Gleichrichtung elektrischer Ströme oder für photoelektrische Zwecke besteht darin, daß vor der Aufbringung der Elektrode auf die Halbleiterfläche, an der die unipolare Sperrwirkung auftritt, diese mit unedlen Metallen, z. B. Alkali- oder Erdalkalimetall, in Dampfform in so geringer Menge, daß sie eine höchstens wenige Atomschichten starke Schicht bilden kann, behandelt wird, welche geeignet sind, gewisse, die Leitfähigkeit begünstigende chemische Komponenten oder andere gelöste Beimengungen des Halbleiters von seiner Oberfläche zu entfernen.The inventive method for producing unipolar barriers on semiconductors for rectifying electrical currents or for photoelectric purposes consists in that before the application of the electrode to the semiconductor surface on which the unipolar Locking effect occurs, this with base metals, z. B. alkali or alkaline earth metal, in Vapor form in such a small amount that it forms a layer at most a few atomic layers thick can form, is treated, which are suitable, certain ones that favor conductivity chemical components or other dissolved additions of the semiconductor from its Remove surface.
Das erfindungsgemäße Verfahren kann z. B. in der Weise ausgeführt werden, daß ein Kupferoxydulplättchen, welches entweder massiv ist oder sich nur als dünne Schicht auf einem Kupferblech befindet,· der Einwirkung von Metalldämpfen ausgesetzt wird. Als Metall kann z. B. Cäsium verwendet werden, welches wahrscheinlich mit dem im Kupferoxydul gelösten Sauerstoff Spuren von Cäsiumoxyd bildet. Die zur Anwendung gelangende Cäsiummenge ist so gering, daß sich höchstens eine wenige Atomlagen betragende Cäsiumschicht auf dem Halbleiter niederschlägt. Dadurch wird wahrscheinlich eine geringe Verarmung des Kupferoxyduls an Sauerstoff herbeigeführt, wodurch die Leitfähigkeit an der Oberfläche herabgesetzt und die Sperrwirkung vergrößert wird. Bringt man auf einer derart behandelten Fläche dann eine Elektrode an, die man z. B. thermisch oder kathodisch aufstäubt und die aus Silber oder Gold bestehen kann, so erhält man eine Sperrwirkung, die derjenigen, die man ohne vorhergehende Behandlung mit Cäsium erhält, stark überlegen ist. Man kann auf diese Weise sowohl zu Kontakten gelangen, die photoelektrisch wirksam sind, wie auch zu solchen, dieThe inventive method can, for. B. be carried out in such a way that a Copper oxide platelets, which are either massive or only appear as a thin layer is on a copper sheet, · is exposed to the effects of metal vapors. as Metal can e.g. B. Cesium can be used, which is probably with that in the copper oxide dissolved oxygen forms traces of cesium oxide. The amount of cesium used is so small that at most a cesium layer of a few atomic layers is deposited on the semiconductor. This probably leads to a slight depletion of oxygen in the copper oxide, thereby reducing the conductivity is reduced on the surface and the blocking effect is increased. Then you bring it to an area treated in this way an electrode that can be used e.g. B. thermally or cathodically sputtered and made of silver or gold, one obtains a barrier effect that of the one without previous treatment with cesium is greatly superior. You can this way get to contacts that are photoelectrically effective as well as those that
*) Von dem Patentsucher ist als der Erfinder angegeben worden:*) The patent seeker stated as the inventor:
Dr. Ferdinand Waibel in Berlin-Charlottenburg.Dr. Ferdinand Waibel in Berlin-Charlottenburg.
sich für die Zwecke der Gleichrichtung gut gebrauchen lassen.can be used well for the purpose of rectification.
Auch bei anderen Halbleitern, ζ. Β flden, S el en; den und ähnlichen, ist ei: handlung mit unedlen Metallen, z. B. oder Erdalkalimetallen, vorteilhaft. Ma: vermuten, daß auch diese Wirkung darauf "be*·" ruht, daß diese Metalle den elektronegativen Bestandteil, z.B. den Schwefel oder das Selen,Also with other semiconductors, ζ. Β flden, S el en; that and similar, is egg: trading in base metals, e.g. B. or alkaline earth metals, advantageous. Ma: suspect that this effect also "be * ·" rests that these metals have the electronegative constituent, e.g. sulfur or selenium,
ίο binden und dadurch eine oberflächliche Verarmung an diesem Bestandteil bewirken. Die Behandlung mit solchen Metallen erfolgt vorteilhaft in einem Vakuumgefäß und kann z. B. in der Weise durchgeführt werden, daß in dem Gefäß durch Heizen eines mit dem betreffenden Metall oder einer seiner Verbindungen bestrichenen Drahtes etwas Metalldampf erzeugt wird, der sich auf der Halbleiteroberfläche niederschlägt. Auf dieser Fläche wirdίο bind and thereby cause a superficial impoverishment of this component. the Treatment with such metals is advantageously carried out in a vacuum vessel and can, for. B. be carried out in such a way that in the vessel by heating one with the concerned Metal or one of its connections coated wire something metal vapor is generated, which is on the semiconductor surface precipitates. On this area is
ao dann, ohne daß der Halbleiter aus dem Gefäß entfernt wird, z.B. durch kathodisches Aufstäuben, die wirksame Elektrode hergestellt und eine Stromzuführung an dieser befestigt. Dieser letztgenannte Arbeitsgang kann z. B.ao then, without the semiconductor being removed from the vessel, e.g. by cathodic sputtering, the effective electrode produced and a power supply attached to this. This last-mentioned operation can, for. B.
in der bekannten Weise erfolgen, daß ein federnder gespannter Kontakt so angeordnet wird, daß er nach Durchbrennen eines dünnen Drähtchens frei wird und sich auf die aufgestäubte Elektrode fest auflegt. Das Gefäß kann danach evakuiert bleiben oder mit einer gewünschten Gasfüllung versehen werden.take place in the known manner that a resilient tensioned contact is arranged becomes that it becomes free after a thin wire has been burned through and settles on the dusted Electrode firmly in place. The vessel can then remain evacuated or with a required gas filling.
Werden zur chemischen Oberflächenbehandlung Metalle verwendet, so ist es erforderlich, diese stets nur in ganz geringer Menge zur Anwendung zu bringen, so'daß sie selbst nicht ausreichen, die wirksame Elektrode zu bilden. An Stelle von Metallen können auch Amalgame benutzt werden. Besitzt der Halbleiter außer der zu behandelnden noch weitere freie Oberflächen, so können diese während der Behandlung abgedeckt werden, so daß an ihnen keine Einwirkung stattfindet.If metals are used for chemical surface treatment, it is necessary to to use these only in very small quantities, so that they themselves do not sufficient to form the effective electrode. Instead of metals, amalgams can also be used to be used. Does the semiconductor have other than the one to be treated free surfaces, so these can be covered during the treatment, so that on they are not affected.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES104231D DE667750C (en) | 1932-04-16 | 1932-04-17 | Process for making unipolar barriers |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0104231 | 1932-04-16 | ||
| DES104231D DE667750C (en) | 1932-04-16 | 1932-04-17 | Process for making unipolar barriers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE667750C true DE667750C (en) | 1938-11-19 |
Family
ID=25998490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES104231D Expired DE667750C (en) | 1932-04-16 | 1932-04-17 | Process for making unipolar barriers |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE667750C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE893232C (en) * | 1949-04-09 | 1953-10-15 | Licentia Gmbh | Selenium rectifier plate |
| DE946075C (en) * | 1945-03-29 | 1956-07-26 | Siemens Ag | Dry barrier rectifier |
| DE952655C (en) * | 1953-03-06 | 1956-11-22 | Standard Elektrik Ag | Process for the production of easily formable selenium rectifier plates with low lock voltage |
| DE966967C (en) * | 1939-03-02 | 1957-09-19 | Aeg | Electrically asymmetrically conductive system, especially dry rectifier |
| DE970900C (en) * | 1944-05-24 | 1958-11-13 | Standard Elek K Lorenz Ag | Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors |
-
1932
- 1932-04-17 DE DES104231D patent/DE667750C/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE966967C (en) * | 1939-03-02 | 1957-09-19 | Aeg | Electrically asymmetrically conductive system, especially dry rectifier |
| DE970900C (en) * | 1944-05-24 | 1958-11-13 | Standard Elek K Lorenz Ag | Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors |
| DE946075C (en) * | 1945-03-29 | 1956-07-26 | Siemens Ag | Dry barrier rectifier |
| DE893232C (en) * | 1949-04-09 | 1953-10-15 | Licentia Gmbh | Selenium rectifier plate |
| DE952655C (en) * | 1953-03-06 | 1956-11-22 | Standard Elektrik Ag | Process for the production of easily formable selenium rectifier plates with low lock voltage |
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