DE898627C - Method of reducing the aging of selenium rectifiers - Google Patents

Method of reducing the aging of selenium rectifiers

Info

Publication number
DE898627C
DE898627C DES9915D DES0009915D DE898627C DE 898627 C DE898627 C DE 898627C DE S9915 D DES9915 D DE S9915D DE S0009915 D DES0009915 D DE S0009915D DE 898627 C DE898627 C DE 898627C
Authority
DE
Germany
Prior art keywords
aging
selenium
reducing
rectifiers
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES9915D
Other languages
German (de)
Inventor
Ernst Dipl-Ing Siebert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DES13924D priority Critical patent/DE883476C/en
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES9915D priority patent/DE898627C/en
Application granted granted Critical
Publication of DE898627C publication Critical patent/DE898627C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing

Description

Verfahren zur Verringerung der Alterung von Selengleichrichtern Zusatz zum Patent 883476 Es ist bekannt, daß Setengleichrichter im Laufe der Zeit altern, d. h. daß der Widerstand in der Durchlaß richtung größer wird. Es kann sich dabei um eine Erhöhung des übergangswiderstandes zwischen Trägerelektrode und Halblei,ter, eine Erhöhung des Bahnwiderstandes der Halbleiterschicht, eine Änderung des Widerstandes der Sperrschicht und eine Erhöhung des Übergangswiderstandes zur Gegen oder Deckelelektrode handeln. Je nach der Herstellungsweise der Gleichrichter wird die eine oder andere Unsache überwiegen.Method of reducing the aging of selenium rectifiers addition for patent 883476 It is known that rectifiers age over time, d. H. that the resistance in the forward direction is greater. It can turn out to be to increase the contact resistance between the carrier electrode and the semiconductor, an increase in the sheet resistance of the semiconductor layer, a change in the resistance the barrier layer and an increase in the contact resistance to the counter or cover electrode Act. Depending on how the rectifier is manufactured, one or the other Bad things outweigh.

Gegenstand der Erfindung des. Patents. 883 476 ist ein Verfahren zur Verringerung der Alterung von Selengleichrichtern, welches darin besteht, daß der fertige Selengleichrichter während einer längeren, mindestens einige Stunden umfassenden Zeite dauer einer Nacherwärmung auf eine über der Betriehst emperatur des Gleichrichters, höchstens aber beim Schmelzpunkt der Deckelektrode lie gende Temperatur ausgesetzt. wird. Durch diesen Nacherwärmungsvorgang (Temperung) wird eine wesentlich höhere Konstanz der elektrischen Werte des Selengleichrichters erreicht. Subject of the invention of the. Patent. 883 476 is a procedure to reduce the aging of selenium rectifiers, which consists in that the finished selenium rectifier for a long time, at least a few hours comprehensive time duration of reheating to a temperature above the operating temperature of the rectifier, but not more than the melting point of the top electrode Exposed to temperature. will. This reheating process (tempering) is A much higher constancy of the electrical values of the selenium rectifier is achieved.

Gemäß der Erfindung werden die durch dlie Temperung nach dem Verfahren des. Patents 883 476 erzielten elektrischen Eigenschaften des Selengleichrichters bei solchen Gleichrichtern, die thalliumhaltige Gegenelektroden haben, noch dadurch wesentlich verbessert, daß die Gleichrichter nach ihrer Fertigstellung, also im Anschluß an den Nacherwärmungsvorgang, kurzzeitig nachformieft, d. h. der Einwirkung einer Gleichspannung ausgesetzt werden. Durch ein solches kurzzeitig es Nachformieren werden schon nach einer Formierungszeit von nur Io bfs; 20 Sekunden überaus gute Sperrwerte erzielt. Es hat s,ich gezeigt, daß Selengleichrichter, welche gemäß der Erfindung zunächst getempert und dann nachformiert werden, eih besseres elektrisches Verhalten haben als solche Gleichrichter, bei denen vor dem Aufbringen der Deckelektrode die Oberfläche der Selenschicht einer Behandlung mit Schwefel unterzogen wurde. Das bedeutet, daß die in dem Herstellungsprozeß meist kritische Operation der Schwefelung fallen gelassen werden kann, wo;bei das Ergebnis gleichzeitig noch verbessert wird. According to the invention, the by the tempering according to the method des. Patent 883 476 achieved electrical properties of the Selenium rectifier with rectifiers that have thallium-containing counter-electrodes, this is still the case much improved that the rectifier after its completion, so in Connection to the reheating process, briefly reformed, d. H. the impact exposed to direct voltage. By such a short-term it reforming are already after a formation time of only Io bfs; 20 seconds very good Lock values achieved. It has s, I showed that selenium rectifiers, which according to the Invention first tempered and then reformed, eih better electrical Have behavior as such rectifier, in which before the application of the cover electrode the surface of the selenium layer has been subjected to a treatment with sulfur. This means that the most critical operation in the manufacturing process is sulfurization can be dropped where the result is improved at the same time.

Das Verfahren nach der Erfindung wurde mit besonders gutem Erfolg bei solchen Selengleichrichtern angewendet, bei denen als Gegen- oder Deckelektrode eine Eutektikumlegierung aus Zinn und Kadmium und bei denen chlorhaltiges Selen für die Selenschieht verwendet wird. The method of the invention has met with particularly good success used in such selenium rectifiers, where as a counter or top electrode a eutectic alloy made of tin and cadmium and in which selenium contains chlorine for which Selenschicht is used.

Claims (2)

P A T E N T A N S P R Ü C H E : I. Verfahren zur Verringerung der Alterung von Selengleichrichtern mit thalliumhaltiger Gegenelektrode, bei denen gemäß Patent 883 476 die Gleichrichterscheiben einer Nacherwärmung ausgesetzt werden, dadurch gekennzeichnet, daß die Gleichrichterscheiben zusätzlich nachformiert werden. P A T E N T A N S P R Ü C H E: I. Procedure for reducing the Aging of selenium rectifiers with a thallium-containing counter electrode, in which according to patent 883 476 the rectifier disks are subjected to reheating, characterized in that the rectifier disks are additionally reformed. 2. Verfahren nach Anspruch I, gekennzeichnet durch eine Formierungsdauer von etwa 10 bis 20 Sekunden. 2. The method according to claim I, characterized by a formation time from about 10 to 20 seconds.
DES9915D 1943-02-03 1944-06-10 Method of reducing the aging of selenium rectifiers Expired DE898627C (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DES13924D DE883476C (en) 1943-02-03 1943-02-04 Process for reducing the aging of selenium rectifiers with a cover electrode applied to the selenium layer, for example made of a tin-cadmium alloy
DES9915D DE898627C (en) 1943-02-03 1944-06-10 Method of reducing the aging of selenium rectifiers

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES0013924 1943-02-03
DES13924D DE883476C (en) 1943-02-03 1943-02-04 Process for reducing the aging of selenium rectifiers with a cover electrode applied to the selenium layer, for example made of a tin-cadmium alloy
DES0009915 1944-06-09
DES9915D DE898627C (en) 1943-02-03 1944-06-10 Method of reducing the aging of selenium rectifiers

Publications (1)

Publication Number Publication Date
DE898627C true DE898627C (en) 1953-12-03

Family

ID=34812118

Family Applications (2)

Application Number Title Priority Date Filing Date
DES13924D Expired DE883476C (en) 1943-02-03 1943-02-04 Process for reducing the aging of selenium rectifiers with a cover electrode applied to the selenium layer, for example made of a tin-cadmium alloy
DES9915D Expired DE898627C (en) 1943-02-03 1944-06-10 Method of reducing the aging of selenium rectifiers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DES13924D Expired DE883476C (en) 1943-02-03 1943-02-04 Process for reducing the aging of selenium rectifiers with a cover electrode applied to the selenium layer, for example made of a tin-cadmium alloy

Country Status (1)

Country Link
DE (2) DE883476C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1015543B (en) * 1954-09-18 1957-09-12 Standard Elektrik Ag Process for the production of selenium dry rectifiers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1015543B (en) * 1954-09-18 1957-09-12 Standard Elektrik Ag Process for the production of selenium dry rectifiers

Also Published As

Publication number Publication date
DE883476C (en) 1953-07-16

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