GB2327145A - Graded layers in an optoelectronic semiconductor device - Google Patents
Graded layers in an optoelectronic semiconductor device Download PDFInfo
- Publication number
- GB2327145A GB2327145A GB9714468A GB9714468A GB2327145A GB 2327145 A GB2327145 A GB 2327145A GB 9714468 A GB9714468 A GB 9714468A GB 9714468 A GB9714468 A GB 9714468A GB 2327145 A GB2327145 A GB 2327145A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cladding
- layer
- region
- graded layer
- graded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 230000005693 optoelectronics Effects 0.000 title claims description 10
- 238000005253 cladding Methods 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 47
- 239000000470 constituent Substances 0.000 claims description 32
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- 239000004411 aluminium Substances 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052738 indium Inorganic materials 0.000 claims description 16
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims 3
- 240000002329 Inga feuillei Species 0.000 abstract description 29
- 229910052594 sapphire Inorganic materials 0.000 abstract description 8
- 239000010980 sapphire Substances 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000013500 data storage Methods 0.000 description 4
- 230000002939 deleterious effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9714468A GB2327145A (en) | 1997-07-10 | 1997-07-10 | Graded layers in an optoelectronic semiconductor device |
| EP98305437A EP0890997B1 (en) | 1997-07-10 | 1998-07-08 | III-nitride optoelectronic semiconductor devices |
| DE69838313T DE69838313T2 (de) | 1997-07-10 | 1998-07-08 | Optoelektronische Halbleiteranordnung auf Basis einer Nitridverbindung der Gruppe III |
| US09/111,975 US6072189A (en) | 1997-07-10 | 1998-07-08 | III-nitride optoelectronic semiconductor device containing Lattice mismatched III-nitride semiconductor materials |
| JP19473398A JPH1174564A (ja) | 1997-07-10 | 1998-07-09 | Ｉｉｉ族窒化物光電子半導体装置 |
| US09/500,164 US6695913B1 (en) | 1997-07-10 | 2000-02-08 | III-Nitride optoelectronic semiconductor device containing lattice mismatched III-Nitride semiconductor materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9714468A GB2327145A (en) | 1997-07-10 | 1997-07-10 | Graded layers in an optoelectronic semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9714468D0 GB9714468D0 (en) | 1997-09-17 |
| GB2327145A true GB2327145A (en) | 1999-01-13 |
Family
ID=10815606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9714468A Withdrawn GB2327145A (en) | 1997-07-10 | 1997-07-10 | Graded layers in an optoelectronic semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6072189A (enExample) |
| EP (1) | EP0890997B1 (enExample) |
| JP (1) | JPH1174564A (enExample) |
| DE (1) | DE69838313T2 (enExample) |
| GB (1) | GB2327145A (enExample) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6695913B1 (en) * | 1997-07-10 | 2004-02-24 | Sharp Kabushiki Kaisha | III-Nitride optoelectronic semiconductor device containing lattice mismatched III-Nitride semiconductor materials |
| JP3420028B2 (ja) * | 1997-07-29 | 2003-06-23 | 株式会社東芝 | ＧａＮ系化合物半導体素子の製造方法 |
| GB2331307A (en) * | 1997-11-15 | 1999-05-19 | Sharp Kk | Growth of buffer layer by molecular beam epitaxy |
| JP2000261035A (ja) * | 1999-03-12 | 2000-09-22 | Toyoda Gosei Co Ltd | ＧａＮ系の半導体素子 |
| JP2000349393A (ja) * | 1999-03-26 | 2000-12-15 | Fuji Xerox Co Ltd | 半導体デバイス、面発光型半導体レーザ、及び端面発光型半導体レーザ |
| JP4750238B2 (ja) * | 1999-06-04 | 2011-08-17 | ソニー株式会社 | 半導体発光素子 |
| GB9913950D0 (en) * | 1999-06-15 | 1999-08-18 | Arima Optoelectronics Corp | Unipolar light emitting devices based on iii-nitride semiconductor superlattices |
| US7473316B1 (en) * | 2000-04-12 | 2009-01-06 | Aixtron Ag | Method of growing nitrogenous semiconductor crystal materials |
| GB2362263A (en) * | 2000-05-12 | 2001-11-14 | Juses Chao | Amorphous and polycrystalline growth of gallium nitride-based semiconductors |
| US6707074B2 (en) * | 2000-07-04 | 2004-03-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and apparatus for driving the same |
| JP2002075880A (ja) * | 2000-09-01 | 2002-03-15 | Sanyo Electric Co Ltd | 窒化物系半導体層の形成方法および窒化物系半導体素子の製造方法 |
| US6534797B1 (en) | 2000-11-03 | 2003-03-18 | Cree, Inc. | Group III nitride light emitting devices with gallium-free layers |
| US6800876B2 (en) | 2001-01-16 | 2004-10-05 | Cree, Inc. | Group III nitride LED with undoped cladding layer (5000.137) |
| US6906352B2 (en) | 2001-01-16 | 2005-06-14 | Cree, Inc. | Group III nitride LED with undoped cladding layer and multiple quantum well |
| USRE46589E1 (en) | 2001-01-16 | 2017-10-24 | Cree, Inc. | Group III nitride LED with undoped cladding layer and multiple quantum well |
| US6576932B2 (en) | 2001-03-01 | 2003-06-10 | Lumileds Lighting, U.S., Llc | Increasing the brightness of III-nitride light emitting devices |
| JP3876649B2 (ja) * | 2001-06-05 | 2007-02-07 | ソニー株式会社 | 窒化物半導体レーザ及びその製造方法 |
| US6833564B2 (en) * | 2001-11-02 | 2004-12-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride separate confinement heterostructure light emitting devices |
| US7030428B2 (en) * | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
| US6813296B2 (en) * | 2002-04-25 | 2004-11-02 | Massachusetts Institute Of Technology | GaSb-clad mid-infrared semiconductor laser |
| US6841001B2 (en) * | 2002-07-19 | 2005-01-11 | Cree, Inc. | Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures |
| US6835957B2 (en) * | 2002-07-30 | 2004-12-28 | Lumileds Lighting U.S., Llc | III-nitride light emitting device with p-type active layer |
| US6815241B2 (en) * | 2002-09-25 | 2004-11-09 | Cao Group, Inc. | GaN structures having low dislocation density and methods of manufacture |
| DE10260937A1 (de) * | 2002-12-20 | 2004-07-08 | Technische Universität Braunschweig | Strahlungssemittierender Halbleiterkörper und Verfahren zu dessen Herstellung |
| JP4377600B2 (ja) * | 2003-03-24 | 2009-12-02 | 株式会社東芝 | ３族窒化物半導体の積層構造、その製造方法、及び３族窒化物半導体装置 |
| JP4588380B2 (ja) * | 2003-08-18 | 2010-12-01 | ローム株式会社 | 半導体発光素子 |
| JPWO2005020396A1 (ja) * | 2003-08-26 | 2006-10-19 | ソニー株式会社 | ＧａＮ系ＩＩＩ−Ｖ族化合物半導体発光素子及びその製造方法 |
| JP4854178B2 (ja) * | 2004-01-28 | 2012-01-18 | 住友電気工業株式会社 | 半導体素子 |
| US7122839B2 (en) * | 2004-10-29 | 2006-10-17 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting devices with graded composition light emitting layers |
| KR101216622B1 (ko) * | 2004-11-01 | 2012-12-31 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 매우 낮은 직렬-저항 및 개선된 히트 싱킹을 가진 발광소자 제조용의 상호 맞물린 멀티-픽셀 어레이 |
| KR100752007B1 (ko) * | 2005-01-28 | 2007-08-28 | 도요다 고세이 가부시키가이샤 | 3족 질화물계 화합물 반도체 발광 소자 및 그 제조 방법 |
| JP2006210692A (ja) * | 2005-01-28 | 2006-08-10 | Toyoda Gosei Co Ltd | ３族窒化物系化合物半導体発光素子 |
| DE102005048196B4 (de) * | 2005-07-29 | 2023-01-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender Halbleiterchip |
| JP2007048869A (ja) * | 2005-08-09 | 2007-02-22 | Sony Corp | ＧａＮ系半導体発光素子の製造方法 |
| US20070045638A1 (en) | 2005-08-24 | 2007-03-01 | Lumileds Lighting U.S., Llc | III-nitride light emitting device with double heterostructure light emitting region |
| TWI364118B (en) * | 2007-06-29 | 2012-05-11 | Huga Optotech Inc | Semiconductor structure combination for epitaxy of semiconductor optoelectronic device and manufactur thereof |
| KR101479623B1 (ko) * | 2008-07-22 | 2015-01-08 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
| JP2010251811A (ja) * | 2010-08-11 | 2010-11-04 | Sumitomo Electric Ind Ltd | 半導体素子 |
| DE102017119931A1 (de) * | 2017-08-30 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5003548A (en) * | 1988-09-21 | 1991-03-26 | Cornell Research Foundation, Inc. | High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laser |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE68920853T2 (de) * | 1988-11-28 | 1995-05-24 | Fujitsu Ltd | Verfahren für das Wachstum von epitaxialen Schichten. |
| US5646953A (en) * | 1994-04-06 | 1997-07-08 | Matsushita Electronics Corporation | Semiconductor laser device |
| US5592501A (en) * | 1994-09-20 | 1997-01-07 | Cree Research, Inc. | Low-strain laser structures with group III nitride active layers |
| JPH08264833A (ja) * | 1995-03-10 | 1996-10-11 | Hewlett Packard Co <Hp> | 発光ダイオード |
| US5625202A (en) * | 1995-06-08 | 1997-04-29 | University Of Central Florida | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
| JPH0918083A (ja) * | 1995-07-03 | 1997-01-17 | Gijutsu Kenkyu Kumiai Shinjoho Shiyori Kaihatsu Kiko | 面発光半導体レーザ |
-
1997
- 1997-07-10 GB GB9714468A patent/GB2327145A/en not_active Withdrawn
-
1998
- 1998-07-08 US US09/111,975 patent/US6072189A/en not_active Expired - Lifetime
- 1998-07-08 DE DE69838313T patent/DE69838313T2/de not_active Expired - Lifetime
- 1998-07-08 EP EP98305437A patent/EP0890997B1/en not_active Expired - Lifetime
- 1998-07-09 JP JP19473398A patent/JPH1174564A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5003548A (en) * | 1988-09-21 | 1991-03-26 | Cornell Research Foundation, Inc. | High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laser |
Non-Patent Citations (1)
| Title |
|---|
| Japanese Patent Office Abstract of JP09018083 (FUJITSU) * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0890997B1 (en) | 2007-08-29 |
| DE69838313D1 (de) | 2007-10-11 |
| DE69838313T2 (de) | 2008-05-21 |
| EP0890997A3 (en) | 1999-11-03 |
| JPH1174564A (ja) | 1999-03-16 |
| US6072189A (en) | 2000-06-06 |
| GB9714468D0 (en) | 1997-09-17 |
| EP0890997A2 (en) | 1999-01-13 |
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