GB2148946B - Metal-silicide deposition using plasma-enhanced chemical vapour deposition - Google Patents

Metal-silicide deposition using plasma-enhanced chemical vapour deposition

Info

Publication number
GB2148946B
GB2148946B GB08426071A GB8426071A GB2148946B GB 2148946 B GB2148946 B GB 2148946B GB 08426071 A GB08426071 A GB 08426071A GB 8426071 A GB8426071 A GB 8426071A GB 2148946 B GB2148946 B GB 2148946B
Authority
GB
United Kingdom
Prior art keywords
deposition
plasma
metal
enhanced chemical
chemical vapour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08426071A
Other languages
English (en)
Other versions
GB8426071D0 (en
GB2148946A (en
Inventor
Richard Stephen Rosler
George Martin Engle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ADVANCED SEMICONDUCTOR MAT
Advanced Semiconductor Materials America Inc
Original Assignee
ADVANCED SEMICONDUCTOR MAT
Advanced Semiconductor Materials America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ADVANCED SEMICONDUCTOR MAT, Advanced Semiconductor Materials America Inc filed Critical ADVANCED SEMICONDUCTOR MAT
Publication of GB8426071D0 publication Critical patent/GB8426071D0/en
Publication of GB2148946A publication Critical patent/GB2148946A/en
Application granted granted Critical
Publication of GB2148946B publication Critical patent/GB2148946B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
GB08426071A 1983-10-31 1984-10-16 Metal-silicide deposition using plasma-enhanced chemical vapour deposition Expired GB2148946B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/547,050 US4557943A (en) 1983-10-31 1983-10-31 Metal-silicide deposition using plasma-enhanced chemical vapor deposition

Publications (3)

Publication Number Publication Date
GB8426071D0 GB8426071D0 (en) 1984-11-21
GB2148946A GB2148946A (en) 1985-06-05
GB2148946B true GB2148946B (en) 1986-02-26

Family

ID=24183136

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08426071A Expired GB2148946B (en) 1983-10-31 1984-10-16 Metal-silicide deposition using plasma-enhanced chemical vapour deposition

Country Status (6)

Country Link
US (1) US4557943A (enExample)
JP (1) JPS6096763A (enExample)
DE (1) DE3439853A1 (enExample)
FR (1) FR2554132B1 (enExample)
GB (1) GB2148946B (enExample)
NL (1) NL8403011A (enExample)

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US5167986A (en) * 1988-04-15 1992-12-01 Gordon Roy G Titanium silicide-coated glass windows
US5057375A (en) * 1988-04-15 1991-10-15 Gordon Roy G Titanium silicide-coated glass windows
US4957777A (en) * 1988-07-28 1990-09-18 Massachusetts Institute Of Technology Very low pressure chemical vapor deposition process for deposition of titanium silicide films
US5104694A (en) * 1989-04-21 1992-04-14 Nippon Telephone & Telegraph Corporation Selective chemical vapor deposition of a metallic film on the silicon surface
KR930011413B1 (ko) * 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
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US6041253A (en) * 1995-12-18 2000-03-21 Massachusetts Institute Of Technology Effect of electric field and ultrasound for transdermal drug delivery
US5947921A (en) * 1995-12-18 1999-09-07 Massachusetts Institute Of Technology Chemical and physical enhancers and ultrasound for transdermal drug delivery
US6002961A (en) * 1995-07-25 1999-12-14 Massachusetts Institute Of Technology Transdermal protein delivery using low-frequency sonophoresis
EP1563788B8 (en) 1995-08-29 2015-04-08 Nitto Denko Corporation Microporation of human skin for drug delivery and monitoring applications
JPH09111460A (ja) * 1995-10-11 1997-04-28 Anelva Corp チタン系導電性薄膜の作製方法
JP2002515786A (ja) 1996-06-28 2002-05-28 ソントラ メディカル，エル．ピー． 経皮輸送の超音波増強
US5908659A (en) * 1997-01-03 1999-06-01 Mosel Vitelic Inc. Method for reducing the reflectivity of a silicide layer
US6432479B2 (en) 1997-12-02 2002-08-13 Applied Materials, Inc. Method for in-situ, post deposition surface passivation of a chemical vapor deposited film
AU740999B2 (en) 1998-01-08 2001-11-22 Sontra Medical, Inc. Sonophoretic enhanced transdermal transport
US8287483B2 (en) * 1998-01-08 2012-10-16 Echo Therapeutics, Inc. Method and apparatus for enhancement of transdermal transport
US7066884B2 (en) 1998-01-08 2006-06-27 Sontra Medical, Inc. System, method, and device for non-invasive body fluid sampling and analysis
US6046098A (en) * 1998-02-23 2000-04-04 Micron Technology, Inc. Process of forming metal silicide interconnects
US20040171980A1 (en) * 1998-12-18 2004-09-02 Sontra Medical, Inc. Method and apparatus for enhancement of transdermal transport
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
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Also Published As

Publication number Publication date
FR2554132B1 (fr) 1988-09-23
NL8403011A (nl) 1985-05-17
US4557943A (en) 1985-12-10
JPS643949B2 (enExample) 1989-01-24
JPS6096763A (ja) 1985-05-30
GB8426071D0 (en) 1984-11-21
FR2554132A1 (fr) 1985-05-03
DE3439853A1 (de) 1985-05-09
GB2148946A (en) 1985-06-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19921016