NL8403011A - Werkwijze voor het neerslaan van titaansilicide bij lage temperatuur. - Google Patents
Werkwijze voor het neerslaan van titaansilicide bij lage temperatuur. Download PDFInfo
- Publication number
- NL8403011A NL8403011A NL8403011A NL8403011A NL8403011A NL 8403011 A NL8403011 A NL 8403011A NL 8403011 A NL8403011 A NL 8403011A NL 8403011 A NL8403011 A NL 8403011A NL 8403011 A NL8403011 A NL 8403011A
- Authority
- NL
- Netherlands
- Prior art keywords
- titanium
- silicon
- process according
- containing material
- gaseous
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 29
- 238000001556 precipitation Methods 0.000 title claims description 12
- 229910021332 silicide Inorganic materials 0.000 title description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title description 10
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000003870 refractory metal Substances 0.000 description 7
- 238000004377 microelectronic Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005234 chemical deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 2
- 238000009388 chemical precipitation Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910021352 titanium disilicide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005495 cold plasma Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54705083 | 1983-10-31 | ||
| US06/547,050 US4557943A (en) | 1983-10-31 | 1983-10-31 | Metal-silicide deposition using plasma-enhanced chemical vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8403011A true NL8403011A (nl) | 1985-05-17 |
Family
ID=24183136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8403011A NL8403011A (nl) | 1983-10-31 | 1984-10-03 | Werkwijze voor het neerslaan van titaansilicide bij lage temperatuur. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4557943A (enExample) |
| JP (1) | JPS6096763A (enExample) |
| DE (1) | DE3439853A1 (enExample) |
| FR (1) | FR2554132B1 (enExample) |
| GB (1) | GB2148946B (enExample) |
| NL (1) | NL8403011A (enExample) |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2505736B2 (ja) * | 1985-06-18 | 1996-06-12 | キヤノン株式会社 | 半導体装置の製造方法 |
| US4668530A (en) * | 1985-07-23 | 1987-05-26 | Massachusetts Institute Of Technology | Low pressure chemical vapor deposition of refractory metal silicides |
| US4796562A (en) * | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
| US4709655A (en) * | 1985-12-03 | 1987-12-01 | Varian Associates, Inc. | Chemical vapor deposition apparatus |
| US4732801A (en) * | 1986-04-30 | 1988-03-22 | International Business Machines Corporation | Graded oxide/nitride via structure and method of fabrication therefor |
| US4766006A (en) * | 1986-05-15 | 1988-08-23 | Varian Associates, Inc. | Low pressure chemical vapor deposition of metal silicide |
| US4800105A (en) * | 1986-07-22 | 1989-01-24 | Nihon Shinku Gijutsu Kabushiki Kaisha | Method of forming a thin film by chemical vapor deposition |
| NL8700820A (nl) * | 1987-04-08 | 1988-11-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| KR930003957B1 (ko) * | 1987-05-09 | 1993-05-17 | 후다바 덴시 고오교오 가부시끼가이샤 | 형광표시관 |
| FR2622052B1 (fr) * | 1987-10-19 | 1990-02-16 | Air Liquide | Procede de depot de siliciure de metal refractaire pour la fabrication de circuits integres |
| FR2623014B1 (fr) * | 1987-11-09 | 1990-03-23 | France Etat | Procede de depot selectif d'un siliciure de metal refractaire sur des zones de silicium |
| US5167986A (en) * | 1988-04-15 | 1992-12-01 | Gordon Roy G | Titanium silicide-coated glass windows |
| US5057375A (en) * | 1988-04-15 | 1991-10-15 | Gordon Roy G | Titanium silicide-coated glass windows |
| US4957777A (en) * | 1988-07-28 | 1990-09-18 | Massachusetts Institute Of Technology | Very low pressure chemical vapor deposition process for deposition of titanium silicide films |
| US5104694A (en) * | 1989-04-21 | 1992-04-14 | Nippon Telephone & Telegraph Corporation | Selective chemical vapor deposition of a metallic film on the silicon surface |
| KR930011413B1 (ko) * | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
| JPH06101462B2 (ja) * | 1991-04-30 | 1994-12-12 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 過フッ化炭化水素ポリマ膜を基板に接着する方法および 基板 |
| KR970009274B1 (ko) * | 1991-11-11 | 1997-06-09 | 미쓰비시덴키 가부시키가이샤 | 반도체장치의 도전층접속구조 및 그 제조방법 |
| US5320880A (en) * | 1992-10-20 | 1994-06-14 | Micron Technology, Inc. | Method of providing a silicon film having a roughened outer surface |
| US5814599A (en) * | 1995-08-04 | 1998-09-29 | Massachusetts Insitiute Of Technology | Transdermal delivery of encapsulated drugs |
| US5426003A (en) * | 1994-02-14 | 1995-06-20 | Westinghouse Electric Corporation | Method of forming a plasma sprayed interconnection layer on an electrode of an electrochemical cell |
| US5975912A (en) * | 1994-06-03 | 1999-11-02 | Materials Research Corporation | Low temperature plasma-enhanced formation of integrated circuits |
| US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
| US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
| WO1995034092A1 (en) * | 1994-06-03 | 1995-12-14 | Materials Research Corporation | A method of nitridization of titanium thin films |
| US5972790A (en) * | 1995-06-09 | 1999-10-26 | Tokyo Electron Limited | Method for forming salicides |
| US5780050A (en) | 1995-07-20 | 1998-07-14 | Theratech, Inc. | Drug delivery compositions for improved stability of steroids |
| US5947921A (en) * | 1995-12-18 | 1999-09-07 | Massachusetts Institute Of Technology | Chemical and physical enhancers and ultrasound for transdermal drug delivery |
| US6002961A (en) * | 1995-07-25 | 1999-12-14 | Massachusetts Institute Of Technology | Transdermal protein delivery using low-frequency sonophoresis |
| US6041253A (en) * | 1995-12-18 | 2000-03-21 | Massachusetts Institute Of Technology | Effect of electric field and ultrasound for transdermal drug delivery |
| EP2921111A1 (en) | 1995-08-29 | 2015-09-23 | Nitto Denko Corporation | Microporation of human skin for drug delivery and monitoring applications |
| JPH09111460A (ja) * | 1995-10-11 | 1997-04-28 | Anelva Corp | チタン系導電性薄膜の作製方法 |
| WO1998000194A2 (en) | 1996-06-28 | 1998-01-08 | Sontra Medical, L.P. | Ultrasound enhancement of transdermal transport |
| US5908659A (en) * | 1997-01-03 | 1999-06-01 | Mosel Vitelic Inc. | Method for reducing the reflectivity of a silicide layer |
| US6432479B2 (en) | 1997-12-02 | 2002-08-13 | Applied Materials, Inc. | Method for in-situ, post deposition surface passivation of a chemical vapor deposited film |
| CA2317777C (en) | 1998-01-08 | 2005-05-03 | Sontra Medical, Inc. | Sonophoretic enhanced transdermal transport |
| US7066884B2 (en) | 1998-01-08 | 2006-06-27 | Sontra Medical, Inc. | System, method, and device for non-invasive body fluid sampling and analysis |
| US8287483B2 (en) * | 1998-01-08 | 2012-10-16 | Echo Therapeutics, Inc. | Method and apparatus for enhancement of transdermal transport |
| US6046098A (en) * | 1998-02-23 | 2000-04-04 | Micron Technology, Inc. | Process of forming metal silicide interconnects |
| US20040171980A1 (en) * | 1998-12-18 | 2004-09-02 | Sontra Medical, Inc. | Method and apparatus for enhancement of transdermal transport |
| US6821571B2 (en) | 1999-06-18 | 2004-11-23 | Applied Materials Inc. | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers |
| US20030078499A1 (en) | 1999-08-12 | 2003-04-24 | Eppstein Jonathan A. | Microporation of tissue for delivery of bioactive agents |
| US6541369B2 (en) | 1999-12-07 | 2003-04-01 | Applied Materials, Inc. | Method and apparatus for reducing fixed charges in a semiconductor device |
| US6795727B2 (en) | 2001-10-17 | 2004-09-21 | Pedro Giammarusti | Devices and methods for promoting transcutaneous movement of substances |
| WO2003077970A2 (en) | 2002-03-11 | 2003-09-25 | Altea Therapeutics Corporation | Transdermal integrated actuator device, methods of making and using same |
| US9918665B2 (en) | 2002-03-11 | 2018-03-20 | Nitto Denko Corporation | Transdermal porator and patch system and method for using same |
| US8116860B2 (en) * | 2002-03-11 | 2012-02-14 | Altea Therapeutics Corporation | Transdermal porator and patch system and method for using same |
| US8016811B2 (en) | 2003-10-24 | 2011-09-13 | Altea Therapeutics Corporation | Method for transdermal delivery of permeant substances |
| US8224414B2 (en) | 2004-10-28 | 2012-07-17 | Echo Therapeutics, Inc. | System and method for analyte sampling and analysis with hydrogel |
| US8097614B2 (en) | 2005-02-17 | 2012-01-17 | Velcera Pharmaceuticals, Inc. | Transmucosal administration of meloxicam compositions for treating and preventing disorders in non-human domesticated animals |
| US7432069B2 (en) | 2005-12-05 | 2008-10-07 | Sontra Medical Corporation | Biocompatible chemically crosslinked hydrogels for glucose sensing |
| EP2124723A1 (en) | 2007-03-07 | 2009-12-02 | Echo Therapeutics, Inc. | Transdermal analyte monitoring systems and methods for analyte detection |
| ATE499967T1 (de) | 2007-04-27 | 2011-03-15 | Echo Therapeutics Inc | Hautpermeationsvorrichtung für analytenmessung oder transdermale arzneiabgabe |
| US9295417B2 (en) | 2011-04-29 | 2016-03-29 | Seventh Sense Biosystems, Inc. | Systems and methods for collecting fluid from a subject |
| JP6078230B2 (ja) | 2009-03-02 | 2017-02-08 | セブンス センス バイオシステムズ，インコーポレーテッド | 血液サンプリングに関連する技術および装置 |
| US20110288389A9 (en) | 2009-03-02 | 2011-11-24 | Seventh Sense Biosystems, Inc. | Oxygen sensor |
| WO2011094573A1 (en) | 2010-01-28 | 2011-08-04 | Seventh Sense Biosystems, Inc. | Monitoring or feedback systems and methods |
| WO2011163347A2 (en) | 2010-06-23 | 2011-12-29 | Seventh Sense Biosystems, Inc. | Sampling devices and methods involving relatively little pain |
| ES2561824T3 (es) | 2010-07-16 | 2016-03-01 | Seventh Sense Biosystems, Inc. | Ambiente a baja presión para dispositivos de transferencia de fluidos |
| US20130158482A1 (en) | 2010-07-26 | 2013-06-20 | Seventh Sense Biosystems, Inc. | Rapid delivery and/or receiving of fluids |
| US20120039809A1 (en) | 2010-08-13 | 2012-02-16 | Seventh Sense Biosystems, Inc. | Systems and techniques for monitoring subjects |
| US8808202B2 (en) | 2010-11-09 | 2014-08-19 | Seventh Sense Biosystems, Inc. | Systems and interfaces for blood sampling |
| US20130158468A1 (en) | 2011-12-19 | 2013-06-20 | Seventh Sense Biosystems, Inc. | Delivering and/or receiving material with respect to a subject surface |
| WO2012149126A1 (en) | 2011-04-29 | 2012-11-01 | Seventh Sense Biosystems, Inc. | Plasma or serum production and removal of fluids under reduced pressure |
| JP6121400B2 (ja) | 2011-04-29 | 2017-04-26 | セブンス センス バイオシステムズ，インコーポレーテッド | 流体の送達および／または受け取り |
| US20140066837A1 (en) | 2012-07-26 | 2014-03-06 | Ronald L. Moy | Skin care compositions and methods |
| US10204764B2 (en) * | 2014-10-28 | 2019-02-12 | Applied Materials, Inc. | Methods for forming a metal silicide interconnection nanowire structure |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3540920A (en) * | 1967-08-24 | 1970-11-17 | Texas Instruments Inc | Process of simultaneously vapor depositing silicides of chromium and titanium |
| US3658577A (en) * | 1969-10-01 | 1972-04-25 | Gene F Wakefield | Vapor phase deposition of silicide refractory coatings |
| US4180596A (en) * | 1977-06-30 | 1979-12-25 | International Business Machines Corporation | Method for providing a metal silicide layer on a substrate |
| US4218291A (en) * | 1978-02-28 | 1980-08-19 | Vlsi Technology Research Association | Process for forming metal and metal silicide films |
| US4239819A (en) * | 1978-12-11 | 1980-12-16 | Chemetal Corporation | Deposition method and products |
| JPS5644765A (en) * | 1979-09-20 | 1981-04-24 | Daijietsuto Kogyo Kk | Covered hard metal tool |
| JPS584975A (ja) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | 半導体装置の製造方法 |
| US4359490A (en) * | 1981-07-13 | 1982-11-16 | Fairchild Camera & Instrument Corp. | Method for LPCVD co-deposition of metal and silicon to form metal silicide |
| JPS57147431A (en) * | 1981-10-06 | 1982-09-11 | Semiconductor Energy Lab Co Ltd | Plasma gas phase method |
| DE3211752C2 (de) * | 1982-03-30 | 1985-09-26 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum selektiven Abscheiden von aus Siliziden hochschmelzender Metalle bestehenden Schichtstrukturen auf im wesentlichen aus Silizium bestehenden Substraten und deren Verwendung |
| JPS5956574A (ja) * | 1982-09-24 | 1984-04-02 | Fujitsu Ltd | チタン・シリサイド膜の形成方法 |
-
1983
- 1983-10-31 US US06/547,050 patent/US4557943A/en not_active Expired - Fee Related
-
1984
- 1984-08-28 JP JP59179148A patent/JPS6096763A/ja active Granted
- 1984-10-03 NL NL8403011A patent/NL8403011A/nl not_active Application Discontinuation
- 1984-10-16 GB GB08426071A patent/GB2148946B/en not_active Expired
- 1984-10-30 FR FR8416908A patent/FR2554132B1/fr not_active Expired
- 1984-10-31 DE DE19843439853 patent/DE3439853A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6096763A (ja) | 1985-05-30 |
| GB8426071D0 (en) | 1984-11-21 |
| FR2554132A1 (fr) | 1985-05-03 |
| US4557943A (en) | 1985-12-10 |
| GB2148946B (en) | 1986-02-26 |
| FR2554132B1 (fr) | 1988-09-23 |
| GB2148946A (en) | 1985-06-05 |
| DE3439853A1 (de) | 1985-05-09 |
| JPS643949B2 (enExample) | 1989-01-24 |
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