GB1535019A - Field effect devices - Google Patents
Field effect devicesInfo
- Publication number
- GB1535019A GB1535019A GB44409/77A GB4440977A GB1535019A GB 1535019 A GB1535019 A GB 1535019A GB 44409/77 A GB44409/77 A GB 44409/77A GB 4440977 A GB4440977 A GB 4440977A GB 1535019 A GB1535019 A GB 1535019A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- igfet
- applying
- field effect
- avalanche breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 230000015654 memory Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/743,253 US4075653A (en) | 1976-11-19 | 1976-11-19 | Method for injecting charge in field effect devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1535019A true GB1535019A (en) | 1978-12-06 |
Family
ID=24988084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB44409/77A Expired GB1535019A (en) | 1976-11-19 | 1977-10-25 | Field effect devices |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4075653A (enExample) |
| JP (1) | JPS5364482A (enExample) |
| DE (1) | DE2749711A1 (enExample) |
| FR (1) | FR2371692A1 (enExample) |
| GB (1) | GB1535019A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100459A (ja) * | 1981-12-10 | 1983-06-15 | Nippon Telegr & Teleph Corp <Ntt> | Ｍｏｓ型半導体装置の特性安定化処理方法 |
| JPS6117836A (ja) * | 1984-07-04 | 1986-01-25 | Matsushita Electric Ind Co Ltd | 電気コンロ |
| JP2794678B2 (ja) * | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
| KR960001611B1 (ko) | 1991-03-06 | 1996-02-02 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법 |
| US6624450B1 (en) | 1992-03-27 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US5598009A (en) * | 1994-11-15 | 1997-01-28 | Advanced Micro Devices, Inc. | Hot carrier injection test structure and testing technique for statistical evaluation |
| DE10224956A1 (de) * | 2002-06-05 | 2004-01-08 | Infineon Technologies Ag | Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung |
| JP4967476B2 (ja) * | 2005-07-04 | 2012-07-04 | 株式会社デンソー | 半導体装置の検査方法 |
| WO2023012893A1 (ja) * | 2021-08-03 | 2023-02-09 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4844585B1 (enExample) * | 1969-04-12 | 1973-12-25 | ||
| NL7208026A (enExample) * | 1972-06-13 | 1973-12-17 |
-
1976
- 1976-11-19 US US05/743,253 patent/US4075653A/en not_active Expired - Lifetime
-
1977
- 1977-09-30 JP JP11697477A patent/JPS5364482A/ja active Granted
- 1977-10-07 FR FR7731530A patent/FR2371692A1/fr active Granted
- 1977-10-25 GB GB44409/77A patent/GB1535019A/en not_active Expired
- 1977-11-07 DE DE19772749711 patent/DE2749711A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US4075653A (en) | 1978-02-21 |
| JPS5548459B2 (enExample) | 1980-12-05 |
| FR2371692B1 (enExample) | 1982-04-09 |
| JPS5364482A (en) | 1978-06-08 |
| FR2371692A1 (fr) | 1978-06-16 |
| DE2749711A1 (de) | 1978-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |