DE2749711A1 - Verfahren und anordnung zur beeinflussung und erfassung von ladungstraegerinjektionsvorgaengen in feldeffektbauelementen - Google Patents
Verfahren und anordnung zur beeinflussung und erfassung von ladungstraegerinjektionsvorgaengen in feldeffektbauelementenInfo
- Publication number
- DE2749711A1 DE2749711A1 DE19772749711 DE2749711A DE2749711A1 DE 2749711 A1 DE2749711 A1 DE 2749711A1 DE 19772749711 DE19772749711 DE 19772749711 DE 2749711 A DE2749711 A DE 2749711A DE 2749711 A1 DE2749711 A1 DE 2749711A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- junction
- gate
- bias
- reverse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000002347 injection Methods 0.000 title claims description 25
- 239000007924 injection Substances 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 23
- 230000005669 field effect Effects 0.000 title claims description 12
- 230000008569 process Effects 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000969 carrier Substances 0.000 claims description 19
- 239000002800 charge carrier Substances 0.000 claims description 19
- 230000000694 effects Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000015556 catabolic process Effects 0.000 claims description 13
- 230000002441 reversible effect Effects 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241001214257 Mene Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012549 training Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/743,253 US4075653A (en) | 1976-11-19 | 1976-11-19 | Method for injecting charge in field effect devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2749711A1 true DE2749711A1 (de) | 1978-05-24 |
Family
ID=24988084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772749711 Withdrawn DE2749711A1 (de) | 1976-11-19 | 1977-11-07 | Verfahren und anordnung zur beeinflussung und erfassung von ladungstraegerinjektionsvorgaengen in feldeffektbauelementen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4075653A (enExample) |
| JP (1) | JPS5364482A (enExample) |
| DE (1) | DE2749711A1 (enExample) |
| FR (1) | FR2371692A1 (enExample) |
| GB (1) | GB1535019A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100459A (ja) * | 1981-12-10 | 1983-06-15 | Nippon Telegr & Teleph Corp <Ntt> | Ｍｏｓ型半導体装置の特性安定化処理方法 |
| JPS6117836A (ja) * | 1984-07-04 | 1986-01-25 | Matsushita Electric Ind Co Ltd | 電気コンロ |
| JP2794678B2 (ja) * | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
| KR960001611B1 (ko) | 1991-03-06 | 1996-02-02 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법 |
| US6624450B1 (en) | 1992-03-27 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US5598009A (en) * | 1994-11-15 | 1997-01-28 | Advanced Micro Devices, Inc. | Hot carrier injection test structure and testing technique for statistical evaluation |
| DE10224956A1 (de) * | 2002-06-05 | 2004-01-08 | Infineon Technologies Ag | Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung |
| JP4967476B2 (ja) * | 2005-07-04 | 2012-07-04 | 株式会社デンソー | 半導体装置の検査方法 |
| WO2023012893A1 (ja) * | 2021-08-03 | 2023-02-09 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4844585B1 (enExample) * | 1969-04-12 | 1973-12-25 | ||
| NL7208026A (enExample) * | 1972-06-13 | 1973-12-17 |
-
1976
- 1976-11-19 US US05/743,253 patent/US4075653A/en not_active Expired - Lifetime
-
1977
- 1977-09-30 JP JP11697477A patent/JPS5364482A/ja active Granted
- 1977-10-07 FR FR7731530A patent/FR2371692A1/fr active Granted
- 1977-10-25 GB GB44409/77A patent/GB1535019A/en not_active Expired
- 1977-11-07 DE DE19772749711 patent/DE2749711A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US4075653A (en) | 1978-02-21 |
| GB1535019A (en) | 1978-12-06 |
| JPS5548459B2 (enExample) | 1980-12-05 |
| FR2371692B1 (enExample) | 1982-04-09 |
| JPS5364482A (en) | 1978-06-08 |
| FR2371692A1 (fr) | 1978-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE19752434A1 (de) | Nichtflüchtige Halbleiterspeichervorrichtung mit einer Gateelektrode mit schwebendem Potential | |
| DE3122768A1 (de) | "laterale feldeffekttransistoranordnung mit isolierter gate-elektrode" | |
| DE2838907A1 (de) | Verfahren zum programmieren einer igfet-speicherzelle | |
| DE4020007A1 (de) | Nichtfluechtiger speicher | |
| DE2838937A1 (de) | Rom-speicheranordnung mit feldeffekttransistoren | |
| DE2326751A1 (de) | Halbleiter-speichervorrichtung und feldeffekttransistor, der fuer die verwendung in dieser vorrichtung geeignet ist | |
| DE2356275C2 (de) | Halbleiterspeicherelement mit einem Doppelgate-Isolierschicht- FET | |
| DE2658666A1 (de) | Integrierter schaltkreis | |
| DE69429239T2 (de) | Verfahren und Schaltung zum Löschen von Flash-EEPROMs | |
| DE3941312A1 (de) | Bipolartransistor mit isoliertem gate und verfahren zu seiner herstellung | |
| DE1807857A1 (de) | Metall-Halbleitertransistor | |
| DE2409472A1 (de) | Elektrisch loeschbares halbleiterspeicherelement mit einem doppelgate-isolierschicht-fet | |
| DE19733974C2 (de) | MOSFET-Einrichtung und Verfahren zur Herstellung | |
| DE2432352C3 (de) | MNOS-Halbleiterspeicherelement | |
| DE3244488C2 (enExample) | ||
| DE2749711A1 (de) | Verfahren und anordnung zur beeinflussung und erfassung von ladungstraegerinjektionsvorgaengen in feldeffektbauelementen | |
| DE1614300B2 (de) | Feldeffekttransistor mit isolierter Steuerelektrode | |
| DE2359184A1 (de) | Messeinrichtung zur bestimmung der effektiven ladung in einem dielektrikum | |
| DE2201028B2 (de) | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens | |
| DE3105693C2 (enExample) | ||
| DE3345190C2 (enExample) | ||
| DE10249009A1 (de) | Halbleitervorrichtung | |
| EP1136833A1 (de) | Verfahren zur Durchführung eines Burn-in-Prozesses zum elektrischen Stressen eines Halbleiterspeichers | |
| DE2733674A1 (de) | Rauscharme eingangsschaltung fuer ladungsgekoppelte schaltungsanordnungen | |
| DE2136509A1 (de) | Halbleitervorrichtung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |