GB1511637A - Surface channel field-effect transistors - Google Patents

Surface channel field-effect transistors

Info

Publication number
GB1511637A
GB1511637A GB15194/77A GB1519477A GB1511637A GB 1511637 A GB1511637 A GB 1511637A GB 15194/77 A GB15194/77 A GB 15194/77A GB 1519477 A GB1519477 A GB 1519477A GB 1511637 A GB1511637 A GB 1511637A
Authority
GB
United Kingdom
Prior art keywords
source
drain
gate
field effect
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15194/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1511637A publication Critical patent/GB1511637A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/387—Devices controllable only by the variation of applied heat
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB15194/77A 1976-05-04 1977-04-12 Surface channel field-effect transistors Expired GB1511637A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2619663A DE2619663C3 (de) 1976-05-04 1976-05-04 Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung

Publications (1)

Publication Number Publication Date
GB1511637A true GB1511637A (en) 1978-05-24

Family

ID=5977037

Family Applications (1)

Application Number Title Priority Date Filing Date
GB15194/77A Expired GB1511637A (en) 1976-05-04 1977-04-12 Surface channel field-effect transistors

Country Status (8)

Country Link
US (1) US4219829A (enExample)
JP (1) JPS52134382A (enExample)
BE (1) BE854267A (enExample)
DE (1) DE2619663C3 (enExample)
FR (1) FR2350694A1 (enExample)
GB (1) GB1511637A (enExample)
IT (1) IT1076036B (enExample)
NL (1) NL7704867A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2144913A (en) * 1983-08-12 1985-03-13 American Telephone & Telegraph Field-effect device

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US4163986A (en) * 1978-05-03 1979-08-07 International Business Machines Corporation Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor
IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
US4697198A (en) * 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect
US5162877A (en) * 1987-01-27 1992-11-10 Fujitsu Limited Semiconductor integrated circuit device and method of producing same
US6784492B1 (en) * 1991-03-18 2004-08-31 Canon Kabushiki Kaisha Semiconductor device including a gate-insulated transistor
US5739569A (en) * 1991-05-15 1998-04-14 Texas Instruments Incorporated Non-volatile memory cell with oxide and nitride tunneling layers
US5708398A (en) * 1996-07-01 1998-01-13 Motorola Dual voltage controlled oscillator using integrated transistor and negative differential resistance diode
KR100262457B1 (ko) * 1998-05-04 2000-08-01 윤종용 반도체 장치의 오픈 드레인 입출력단 구조 및 그 제조방법
US6512274B1 (en) 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6593612B2 (en) 2000-12-05 2003-07-15 Infineon Technologies Ag Structure and method for forming a body contact for vertical transistor cells
US7071811B2 (en) * 2003-09-23 2006-07-04 Lsi Logic Corporation High performance voltage control diffusion resistor
US7855128B2 (en) * 2008-05-28 2010-12-21 Sarnoff Corporation Back-illuminated imager using ultra-thin silicon on insulator substrates
CN103094478B (zh) * 2013-01-21 2015-01-21 中国科学技术大学 基于硅-分子复合体系单分子负微分电阻器件及制备方法
US10777566B2 (en) 2017-11-10 2020-09-15 Macronix International Co., Ltd. 3D array arranged for memory and in-memory sum-of-products operations
US10719296B2 (en) 2018-01-17 2020-07-21 Macronix International Co., Ltd. Sum-of-products accelerator array
US10957392B2 (en) 2018-01-17 2021-03-23 Macronix International Co., Ltd. 2D and 3D sum-of-products array for neuromorphic computing system
US10242737B1 (en) 2018-02-13 2019-03-26 Macronix International Co., Ltd. Device structure for neuromorphic computing system
US10635398B2 (en) 2018-03-15 2020-04-28 Macronix International Co., Ltd. Voltage sensing type of matrix multiplication method for neuromorphic computing system
US10664746B2 (en) 2018-07-17 2020-05-26 Macronix International Co., Ltd. Neural network system
US11138497B2 (en) 2018-07-17 2021-10-05 Macronix International Co., Ltd In-memory computing devices for neural networks
US11636325B2 (en) 2018-10-24 2023-04-25 Macronix International Co., Ltd. In-memory data pooling for machine learning
US11562229B2 (en) 2018-11-30 2023-01-24 Macronix International Co., Ltd. Convolution accelerator using in-memory computation
US10672469B1 (en) 2018-11-30 2020-06-02 Macronix International Co., Ltd. In-memory convolution for machine learning
US11934480B2 (en) 2018-12-18 2024-03-19 Macronix International Co., Ltd. NAND block architecture for in-memory multiply-and-accumulate operations
US11119674B2 (en) 2019-02-19 2021-09-14 Macronix International Co., Ltd. Memory devices and methods for operating the same
US10783963B1 (en) 2019-03-08 2020-09-22 Macronix International Co., Ltd. In-memory computation device with inter-page and intra-page data circuits
US11132176B2 (en) 2019-03-20 2021-09-28 Macronix International Co., Ltd. Non-volatile computing method in flash memory
US10910393B2 (en) 2019-04-25 2021-02-02 Macronix International Co., Ltd. 3D NOR memory having vertical source and drain structures
US11737274B2 (en) 2021-02-08 2023-08-22 Macronix International Co., Ltd. Curved channel 3D memory device
US11916011B2 (en) 2021-04-14 2024-02-27 Macronix International Co., Ltd. 3D virtual ground memory and manufacturing methods for same
US11710519B2 (en) 2021-07-06 2023-07-25 Macronix International Co., Ltd. High density memory with reference memory using grouped cells and corresponding operations
US12299597B2 (en) 2021-08-27 2025-05-13 Macronix International Co., Ltd. Reconfigurable AI system
US12321603B2 (en) 2023-02-22 2025-06-03 Macronix International Co., Ltd. High bandwidth non-volatile memory for AI inference system
US12536404B2 (en) 2023-02-22 2026-01-27 Macronix International Co., Ltd. Data optimization for high bandwidth (HBW) NVM AI inference system
US20240370715A1 (en) * 2023-05-04 2024-11-07 Macronix International Co., Ltd. 3D Hybrid Bonding 3D Memory Devices with NPU/CPU for AI Inference Application
US12417170B2 (en) 2023-05-10 2025-09-16 Macronix International Co., Ltd. Computing system and method of operation thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4053915A (en) * 1976-03-22 1977-10-11 Motorola, Inc. Temperature compensated constant current source device
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor
US4145233A (en) * 1978-05-26 1979-03-20 Ncr Corporation Method for making narrow channel FET by masking and ion-implantation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2144913A (en) * 1983-08-12 1985-03-13 American Telephone & Telegraph Field-effect device

Also Published As

Publication number Publication date
FR2350694B1 (enExample) 1982-02-05
DE2619663B2 (de) 1981-11-26
JPS52134382A (en) 1977-11-10
US4219829A (en) 1980-08-26
NL7704867A (nl) 1977-11-08
IT1076036B (it) 1985-04-22
FR2350694A1 (fr) 1977-12-02
BE854267A (fr) 1977-09-01
DE2619663C3 (de) 1982-07-22
DE2619663A1 (de) 1977-11-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee