DE2619663C3 - Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung - Google Patents
Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten SchaltungInfo
- Publication number
- DE2619663C3 DE2619663C3 DE2619663A DE2619663A DE2619663C3 DE 2619663 C3 DE2619663 C3 DE 2619663C3 DE 2619663 A DE2619663 A DE 2619663A DE 2619663 A DE2619663 A DE 2619663A DE 2619663 C3 DE2619663 C3 DE 2619663C3
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- channel
- transistor according
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 5
- 239000002019 doping agent Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 14
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 239000011593 sulfur Substances 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000010355 oscillation Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- -1 sulfur ions Chemical class 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/387—Devices controllable only by the variation of applied heat
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
Landscapes
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2619663A DE2619663C3 (de) | 1976-05-04 | 1976-05-04 | Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung |
| GB15194/77A GB1511637A (en) | 1976-05-04 | 1977-04-12 | Surface channel field-effect transistors |
| FR7712982A FR2350694A1 (fr) | 1976-05-04 | 1977-04-29 | Transistor a effet de champ a canal superficiel |
| IT23003/77A IT1076036B (it) | 1976-05-04 | 1977-04-29 | Transistore a effetto di campo con canale di superficie |
| NL7704867A NL7704867A (nl) | 1976-05-04 | 1977-05-03 | Veldeffecttransistor met een oppervlaktekanaal. |
| BE177277A BE854267A (fr) | 1976-05-04 | 1977-05-04 | Transistor a effet de champ a canal superficiel |
| US05/793,714 US4219829A (en) | 1976-05-04 | 1977-05-04 | Field effect transistor having a surface channel and its method of operation |
| JP5169377A JPS52134382A (en) | 1976-05-04 | 1977-05-04 | Fet transistor with surface channel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2619663A DE2619663C3 (de) | 1976-05-04 | 1976-05-04 | Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2619663A1 DE2619663A1 (de) | 1977-11-10 |
| DE2619663B2 DE2619663B2 (de) | 1981-11-26 |
| DE2619663C3 true DE2619663C3 (de) | 1982-07-22 |
Family
ID=5977037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2619663A Expired DE2619663C3 (de) | 1976-05-04 | 1976-05-04 | Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4219829A (enExample) |
| JP (1) | JPS52134382A (enExample) |
| BE (1) | BE854267A (enExample) |
| DE (1) | DE2619663C3 (enExample) |
| FR (1) | FR2350694A1 (enExample) |
| GB (1) | GB1511637A (enExample) |
| IT (1) | IT1076036B (enExample) |
| NL (1) | NL7704867A (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4163986A (en) * | 1978-05-03 | 1979-08-07 | International Business Machines Corporation | Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor |
| US4472727A (en) * | 1983-08-12 | 1984-09-18 | At&T Bell Laboratories | Carrier freezeout field-effect device |
| IT1214805B (it) * | 1984-08-21 | 1990-01-18 | Ates Componenti Elettron | Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown |
| US4697198A (en) * | 1984-08-22 | 1987-09-29 | Hitachi, Ltd. | MOSFET which reduces the short-channel effect |
| US5162877A (en) * | 1987-01-27 | 1992-11-10 | Fujitsu Limited | Semiconductor integrated circuit device and method of producing same |
| US6784492B1 (en) * | 1991-03-18 | 2004-08-31 | Canon Kabushiki Kaisha | Semiconductor device including a gate-insulated transistor |
| US5739569A (en) * | 1991-05-15 | 1998-04-14 | Texas Instruments Incorporated | Non-volatile memory cell with oxide and nitride tunneling layers |
| US5708398A (en) * | 1996-07-01 | 1998-01-13 | Motorola | Dual voltage controlled oscillator using integrated transistor and negative differential resistance diode |
| KR100262457B1 (ko) * | 1998-05-04 | 2000-08-01 | 윤종용 | 반도체 장치의 오픈 드레인 입출력단 구조 및 그 제조방법 |
| US6512274B1 (en) | 2000-06-22 | 2003-01-28 | Progressant Technologies, Inc. | CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same |
| US6593612B2 (en) | 2000-12-05 | 2003-07-15 | Infineon Technologies Ag | Structure and method for forming a body contact for vertical transistor cells |
| US7071811B2 (en) * | 2003-09-23 | 2006-07-04 | Lsi Logic Corporation | High performance voltage control diffusion resistor |
| US7855128B2 (en) * | 2008-05-28 | 2010-12-21 | Sarnoff Corporation | Back-illuminated imager using ultra-thin silicon on insulator substrates |
| CN103094478B (zh) * | 2013-01-21 | 2015-01-21 | 中国科学技术大学 | 基于硅-分子复合体系单分子负微分电阻器件及制备方法 |
| US10777566B2 (en) | 2017-11-10 | 2020-09-15 | Macronix International Co., Ltd. | 3D array arranged for memory and in-memory sum-of-products operations |
| US10719296B2 (en) | 2018-01-17 | 2020-07-21 | Macronix International Co., Ltd. | Sum-of-products accelerator array |
| US10957392B2 (en) | 2018-01-17 | 2021-03-23 | Macronix International Co., Ltd. | 2D and 3D sum-of-products array for neuromorphic computing system |
| US10242737B1 (en) | 2018-02-13 | 2019-03-26 | Macronix International Co., Ltd. | Device structure for neuromorphic computing system |
| US10635398B2 (en) | 2018-03-15 | 2020-04-28 | Macronix International Co., Ltd. | Voltage sensing type of matrix multiplication method for neuromorphic computing system |
| US10664746B2 (en) | 2018-07-17 | 2020-05-26 | Macronix International Co., Ltd. | Neural network system |
| US11138497B2 (en) | 2018-07-17 | 2021-10-05 | Macronix International Co., Ltd | In-memory computing devices for neural networks |
| US11636325B2 (en) | 2018-10-24 | 2023-04-25 | Macronix International Co., Ltd. | In-memory data pooling for machine learning |
| US11562229B2 (en) | 2018-11-30 | 2023-01-24 | Macronix International Co., Ltd. | Convolution accelerator using in-memory computation |
| US10672469B1 (en) | 2018-11-30 | 2020-06-02 | Macronix International Co., Ltd. | In-memory convolution for machine learning |
| US11934480B2 (en) | 2018-12-18 | 2024-03-19 | Macronix International Co., Ltd. | NAND block architecture for in-memory multiply-and-accumulate operations |
| US11119674B2 (en) | 2019-02-19 | 2021-09-14 | Macronix International Co., Ltd. | Memory devices and methods for operating the same |
| US10783963B1 (en) | 2019-03-08 | 2020-09-22 | Macronix International Co., Ltd. | In-memory computation device with inter-page and intra-page data circuits |
| US11132176B2 (en) | 2019-03-20 | 2021-09-28 | Macronix International Co., Ltd. | Non-volatile computing method in flash memory |
| US10910393B2 (en) | 2019-04-25 | 2021-02-02 | Macronix International Co., Ltd. | 3D NOR memory having vertical source and drain structures |
| US11737274B2 (en) | 2021-02-08 | 2023-08-22 | Macronix International Co., Ltd. | Curved channel 3D memory device |
| US11916011B2 (en) | 2021-04-14 | 2024-02-27 | Macronix International Co., Ltd. | 3D virtual ground memory and manufacturing methods for same |
| US11710519B2 (en) | 2021-07-06 | 2023-07-25 | Macronix International Co., Ltd. | High density memory with reference memory using grouped cells and corresponding operations |
| US12299597B2 (en) | 2021-08-27 | 2025-05-13 | Macronix International Co., Ltd. | Reconfigurable AI system |
| US12321603B2 (en) | 2023-02-22 | 2025-06-03 | Macronix International Co., Ltd. | High bandwidth non-volatile memory for AI inference system |
| US12536404B2 (en) | 2023-02-22 | 2026-01-27 | Macronix International Co., Ltd. | Data optimization for high bandwidth (HBW) NVM AI inference system |
| US20240370715A1 (en) * | 2023-05-04 | 2024-11-07 | Macronix International Co., Ltd. | 3D Hybrid Bonding 3D Memory Devices with NPU/CPU for AI Inference Application |
| US12417170B2 (en) | 2023-05-10 | 2025-09-16 | Macronix International Co., Ltd. | Computing system and method of operation thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4053915A (en) * | 1976-03-22 | 1977-10-11 | Motorola, Inc. | Temperature compensated constant current source device |
| US4078947A (en) * | 1976-08-05 | 1978-03-14 | International Business Machines Corporation | Method for forming a narrow channel length MOS field effect transistor |
| US4145233A (en) * | 1978-05-26 | 1979-03-20 | Ncr Corporation | Method for making narrow channel FET by masking and ion-implantation |
-
1976
- 1976-05-04 DE DE2619663A patent/DE2619663C3/de not_active Expired
-
1977
- 1977-04-12 GB GB15194/77A patent/GB1511637A/en not_active Expired
- 1977-04-29 IT IT23003/77A patent/IT1076036B/it active
- 1977-04-29 FR FR7712982A patent/FR2350694A1/fr active Granted
- 1977-05-03 NL NL7704867A patent/NL7704867A/xx not_active Application Discontinuation
- 1977-05-04 JP JP5169377A patent/JPS52134382A/ja active Pending
- 1977-05-04 BE BE177277A patent/BE854267A/xx unknown
- 1977-05-04 US US05/793,714 patent/US4219829A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2350694B1 (enExample) | 1982-02-05 |
| DE2619663B2 (de) | 1981-11-26 |
| GB1511637A (en) | 1978-05-24 |
| JPS52134382A (en) | 1977-11-10 |
| US4219829A (en) | 1980-08-26 |
| NL7704867A (nl) | 1977-11-08 |
| IT1076036B (it) | 1985-04-22 |
| FR2350694A1 (fr) | 1977-12-02 |
| BE854267A (fr) | 1977-09-01 |
| DE2619663A1 (de) | 1977-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2619663C3 (de) | Feldeffekttransistor, Verfahren zu seinem Betrieb und Verwendung als schneller Schalter sowie in einer integrierten Schaltung | |
| DE2853736C2 (de) | Feldeffektanordnung | |
| DE4100444C2 (enExample) | ||
| DE2611338C3 (de) | Feldeffekttransistor mit sehr kurzer Kanallange | |
| DE69414311T2 (de) | Halbleiteranordnung mit einer Bipolarfeldeffektanordnung mit isoliertem Gate | |
| DE2706623C2 (enExample) | ||
| DE69119820T2 (de) | Halbleiteranordnung mit verringten zeitabhängigen dielektrischen Fehlern | |
| DE2326751C3 (de) | Halbleiterbauelement zum Speichern und Verfahren zum Betrieb | |
| DE2801085C2 (enExample) | ||
| DE3009719C2 (enExample) | ||
| DE3024015A1 (de) | Steuerbarer halbleiterschalter | |
| DE69114984T2 (de) | Dünnfilm-Transistor. | |
| DE3704609A1 (de) | Vorrichtung zur erzeugung einer bezugsgleichspannung | |
| DE19630628A1 (de) | Siliciumkarbidtransistor mit hoher Durchbruchspannung | |
| DE112010003495T5 (de) | Tunnelfeldeffekteinheiten | |
| DE2201028C3 (de) | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens | |
| DE10249009A1 (de) | Halbleitervorrichtung | |
| WO1998012749A2 (de) | Emittergesteuerter thyristor | |
| DE3208500A1 (de) | Spannungsfester mos-transistor fuer hoechstintegrierte schaltungen | |
| DE102008047850B4 (de) | Halbleiterkörper mit einer Schutzstruktur und Verfahren zum Herstellen derselben | |
| DE2001622A1 (de) | Feldeffekttransistor-Bauelement | |
| DE1919406C3 (de) | Feldeffekttransistor und seine Verwendung in einer Schaltungsanordnung für einen Miller-Integrator | |
| EP0040263B1 (de) | Isolierschicht-Feldeffekttransistor | |
| DE1805843A1 (de) | Elektrische Schutzschaltung | |
| DE1439368A1 (de) | Halbleiterstromtor mit Zuendung durch Feldeffekt |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |