GB1471427A - Charge coupled devices - Google Patents
Charge coupled devicesInfo
- Publication number
- GB1471427A GB1471427A GB4208874A GB4208874A GB1471427A GB 1471427 A GB1471427 A GB 1471427A GB 4208874 A GB4208874 A GB 4208874A GB 4208874 A GB4208874 A GB 4208874A GB 1471427 A GB1471427 A GB 1471427A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- charge
- stage
- input
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
1471427 Charge coupled devices SIEMENS AG 27 Sept 1974 [7 Nov 1973] 42088/74 Heading H1K A CCD comprises a plurality of mutually spaced electrodes 30-39 on an insulating layer 2 on a semi-conductor substrate 1, the device having an input stage 5, a charge shift stage 6, and an output stage 7, an input electrode 30 in the input stage 5 having a larger area than any electrode 32-36 in the charge shift stage 6. A voltage connected to the input electrode 30 produces an inversion layer serving as a charge reservoir from which charges are transferred to the charge shift stage 6 and the output stage 7 via transfer electrodes 31, 38 respectively. Charges arriving under the electrode 37 produces a measurable voltage change on it, dependent on the charge transferred. The output electrode 39 may be connected to the input electrode 30 to re-circulate charges and the charge shift stage 6 may be operated by a one, two or three phase clock source. Alternatively, the output electrode 39 may be a Schottky contact. The substrate 1 and insulation 2 may be Si and SiO 2 and the electrodes Al, Cr, W or Mo.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732355715 DE2355715B2 (en) | 1973-11-07 | 1973-11-07 | LOAD SHIFTING ARRANGEMENT ACCORDING TO THE CHARGE COUPLED DEVICE PRIZIP |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1471427A true GB1471427A (en) | 1977-04-27 |
Family
ID=5897465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4208874A Expired GB1471427A (en) | 1973-11-07 | 1974-09-27 | Charge coupled devices |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS5081076A (en) |
| AT (1) | AT359561B (en) |
| BE (1) | BE821949A (en) |
| CA (1) | CA1048154A (en) |
| CH (1) | CH587534A5 (en) |
| DE (1) | DE2355715B2 (en) |
| FR (1) | FR2250202B1 (en) |
| GB (1) | GB1471427A (en) |
| IT (1) | IT1025363B (en) |
| NL (1) | NL7414426A (en) |
| SE (1) | SE402173B (en) |
-
1973
- 1973-11-07 DE DE19732355715 patent/DE2355715B2/en active Granted
-
1974
- 1974-09-27 GB GB4208874A patent/GB1471427A/en not_active Expired
- 1974-10-11 AT AT819674A patent/AT359561B/en not_active IP Right Cessation
- 1974-10-18 CH CH1397074A patent/CH587534A5/xx not_active IP Right Cessation
- 1974-10-30 FR FR7436236A patent/FR2250202B1/fr not_active Expired
- 1974-10-31 IT IT29010/74A patent/IT1025363B/en active
- 1974-11-05 SE SE7413860A patent/SE402173B/en unknown
- 1974-11-05 NL NL7414426A patent/NL7414426A/en not_active Application Discontinuation
- 1974-11-06 CA CA213,154A patent/CA1048154A/en not_active Expired
- 1974-11-07 JP JP49128530A patent/JPS5081076A/ja active Pending
- 1974-11-07 BE BE150294A patent/BE821949A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2250202A1 (en) | 1975-05-30 |
| ATA819674A (en) | 1980-04-15 |
| CA1048154A (en) | 1979-02-06 |
| NL7414426A (en) | 1975-05-12 |
| AT359561B (en) | 1980-11-25 |
| IT1025363B (en) | 1978-08-10 |
| JPS5081076A (en) | 1975-07-01 |
| FR2250202B1 (en) | 1979-02-23 |
| CH587534A5 (en) | 1977-05-13 |
| DE2355715A1 (en) | 1975-05-22 |
| SE7413860L (en) | 1975-05-09 |
| DE2355715B2 (en) | 1977-04-14 |
| SE402173B (en) | 1978-06-19 |
| BE821949A (en) | 1975-03-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |