JPS55158781A - Pickup device using charge transfer element - Google Patents
Pickup device using charge transfer elementInfo
- Publication number
- JPS55158781A JPS55158781A JP6558079A JP6558079A JPS55158781A JP S55158781 A JPS55158781 A JP S55158781A JP 6558079 A JP6558079 A JP 6558079A JP 6558079 A JP6558079 A JP 6558079A JP S55158781 A JPS55158781 A JP S55158781A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrodes
- layer
- sio2
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000005365 phosphate glass Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To increase the sensitivity and then secure the steady working characteristics, by forming the conductor electrodes at the photosensitive part, the storing part and the register part each with the desired materials and then securing the larger thickness for the gate insulated layer of the photosensitive part than that of the register part. CONSTITUTION:The surfaces of p-type semiconductor substrate 15-1 and 15-2 feature n-type buried channel layer 16 each at the storing part. Gate SiO2 film 17-1 exists on layer 16, and 1st layer polycrystalline silicon electrodes 18-1-18-3 plus 2nd layer electrodes 19-1-19-2 which are insulated from each other via SiO2 film 24 exist on film 17-1. And SiO2 films 25-1 and 25-2 formed through the heat oxidation exist on electrodes 19-1 and 19-2 each, and then film 20-1 is formed on films 24, 25-1 and 25-2 via CVD. Film 17-1 is formed in the same way at the photosensitive part, and 2nd layer SnO2 electrodes 21-1 and 21-2 are formed on SiO2 films 24-2 and SiO2 film 20-2 each. And film 20-1 is provided at the storing part; and phosphate glass 22-1 and 22-2 are provided on electrodes 21-1, 21-2 and 20-2 each at the photosensitive part respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6558079A JPS55158781A (en) | 1979-05-29 | 1979-05-29 | Pickup device using charge transfer element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6558079A JPS55158781A (en) | 1979-05-29 | 1979-05-29 | Pickup device using charge transfer element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55158781A true JPS55158781A (en) | 1980-12-10 |
Family
ID=13291081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6558079A Pending JPS55158781A (en) | 1979-05-29 | 1979-05-29 | Pickup device using charge transfer element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55158781A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57129582A (en) * | 1981-02-05 | 1982-08-11 | Nec Corp | Solid state image pickup device and its driving method |
-
1979
- 1979-05-29 JP JP6558079A patent/JPS55158781A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57129582A (en) * | 1981-02-05 | 1982-08-11 | Nec Corp | Solid state image pickup device and its driving method |
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