GB1425965A - Method of treating monocrystalline wafers - Google Patents

Method of treating monocrystalline wafers

Info

Publication number
GB1425965A
GB1425965A GB3081373A GB3081373A GB1425965A GB 1425965 A GB1425965 A GB 1425965A GB 3081373 A GB3081373 A GB 3081373A GB 3081373 A GB3081373 A GB 3081373A GB 1425965 A GB1425965 A GB 1425965A
Authority
GB
United Kingdom
Prior art keywords
wafers
susceptor
recesses
wafer
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3081373A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1425965A publication Critical patent/GB1425965A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
GB3081373A 1972-07-01 1973-06-28 Method of treating monocrystalline wafers Expired GB1425965A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7209297A NL7209297A (US06168776-20010102-C00041.png) 1972-07-01 1972-07-01

Publications (1)

Publication Number Publication Date
GB1425965A true GB1425965A (en) 1976-02-25

Family

ID=19816454

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3081373A Expired GB1425965A (en) 1972-07-01 1973-06-28 Method of treating monocrystalline wafers

Country Status (9)

Country Link
US (1) US3892940A (US06168776-20010102-C00041.png)
JP (1) JPS5320351B2 (US06168776-20010102-C00041.png)
BE (1) BE801749A (US06168776-20010102-C00041.png)
CA (1) CA995565A (US06168776-20010102-C00041.png)
DE (1) DE2331664C3 (US06168776-20010102-C00041.png)
FR (1) FR2190525B1 (US06168776-20010102-C00041.png)
GB (1) GB1425965A (US06168776-20010102-C00041.png)
IT (1) IT991007B (US06168776-20010102-C00041.png)
NL (1) NL7209297A (US06168776-20010102-C00041.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer
US4587928A (en) * 1975-12-24 1986-05-13 Tokyo Shibaura Electric Co., Ltd. Apparatus for producing a semiconductor device

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51135363A (en) * 1975-05-19 1976-11-24 Matsushita Electric Ind Co Ltd Method of manufacturing semiconductors and its equipment
JPS5271171A (en) * 1975-12-10 1977-06-14 Matsushita Electronics Corp Production of epitaxial wafer
SE7710800L (sv) * 1976-10-05 1978-04-06 Western Electric Co Forfarande for astadkommande av ett epitaxiellt skikt pa ett substrat
US4099041A (en) * 1977-04-11 1978-07-04 Rca Corporation Susceptor for heating semiconductor substrates
JPS585478Y2 (ja) * 1978-03-24 1983-01-29 大日本樹脂株式会社 農業用地上保温材
JPS5529174U (US06168776-20010102-C00041.png) * 1978-08-17 1980-02-25
JPS55110044U (US06168776-20010102-C00041.png) * 1979-01-30 1980-08-01
JPS55143455U (US06168776-20010102-C00041.png) * 1979-03-16 1980-10-14
JPS56954A (en) * 1979-06-18 1981-01-08 Sumitomo Chem Co Ltd Heat-accumulating tube made of film
US4386255A (en) * 1979-12-17 1983-05-31 Rca Corporation Susceptor for rotary disc reactor
JPS56131324A (en) * 1980-03-17 1981-10-14 Mitsubishi Monsanto Chem Mulching cultivation
JPS56131322A (en) * 1980-03-17 1981-10-14 Mitsubishi Monsanto Chem Cultivation of useful plant
JPS56157965U (US06168776-20010102-C00041.png) * 1980-04-21 1981-11-25
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
JPS5820855U (ja) * 1981-08-04 1983-02-08 前原　信良 太陽熱蓄熱及び放熱体
JPS58122951U (ja) * 1982-02-17 1983-08-22 株式会社展建築設計事務所 農業用ビニ−ル・ハウス
US5242501A (en) * 1982-09-10 1993-09-07 Lam Research Corporation Susceptor in chemical vapor deposition reactors
US4488507A (en) * 1982-09-30 1984-12-18 Jackson Jr David A Susceptors for organometallic vapor-phase epitaxial (OMVPE) method
JPS60116229U (ja) * 1984-01-10 1985-08-06 日本電気株式会社 半導体ウエ−ハの発熱担体
US4794217A (en) * 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
US5119540A (en) * 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
US8603248B2 (en) * 2006-02-10 2013-12-10 Veeco Instruments Inc. System and method for varying wafer surface temperature via wafer-carrier temperature offset
US8164028B2 (en) * 2008-01-18 2012-04-24 Momentive Performance Materials Inc. Resistance heater
US8993939B2 (en) * 2008-01-18 2015-03-31 Momentive Performance Materials Inc. Resistance heater
TWI397113B (zh) * 2008-08-29 2013-05-21 Veeco Instr Inc 具有可變熱阻之晶圓載體
CN102828169A (zh) * 2011-06-13 2012-12-19 北京北方微电子基地设备工艺研究中心有限责任公司 一种载片托盘、托盘装置和结晶膜生长设备
DE102011055061A1 (de) * 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor
KR101928356B1 (ko) * 2012-02-16 2018-12-12 엘지이노텍 주식회사 반도체 제조 장치
US10316412B2 (en) 2012-04-18 2019-06-11 Veeco Instruments Inc. Wafter carrier for chemical vapor deposition systems
US10167571B2 (en) 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
JP2015067878A (ja) * 2013-09-30 2015-04-13 東京エレクトロン株式会社 熱処理装置及び熱処理方法
KR20160111521A (ko) 2014-01-27 2016-09-26 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 시스템을 위한 복합 반경들을 갖는 유지 포켓들을 구비한 웨이퍼 캐리어
ITUB20154925A1 (it) * 2015-11-03 2017-05-03 L P E S P A Suscettore con recessi asimmetrici, reattore per deposizione epitassiale e metodo di produzione
JP7018744B2 (ja) * 2017-11-24 2022-02-14 昭和電工株式会社 ＳｉＣエピタキシャル成長装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1360497A (fr) * 1963-06-12 1964-05-08 Siemens Ag Procédé pour réaliser des couches cristallines en des substances peu volatiles, notamment des substances semi-conductrices
CH434550A (de) * 1964-11-21 1967-04-30 Tokushu Denki Kabushiki Kaisha Elektrisch beheizte drehbare Heiztrommel
DE1262244B (de) * 1964-12-23 1968-03-07 Siemens Ag Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial
US3539759A (en) * 1968-11-08 1970-11-10 Ibm Susceptor structure in silicon epitaxy
NL7103019A (US06168776-20010102-C00041.png) * 1971-03-06 1972-09-08

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587928A (en) * 1975-12-24 1986-05-13 Tokyo Shibaura Electric Co., Ltd. Apparatus for producing a semiconductor device
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer
FR2571543A1 (fr) * 1984-09-13 1986-04-11 Toshiba Ceramics Co Suscepteur a utiliser pour le depot d'une couche sur une plaquette de silicium par un procede de depot en phase vapeur

Also Published As

Publication number Publication date
BE801749A (fr) 1974-01-02
US3892940A (en) 1975-07-01
DE2331664A1 (de) 1974-03-14
NL7209297A (US06168776-20010102-C00041.png) 1974-01-03
IT991007B (it) 1975-07-30
JPS4945681A (US06168776-20010102-C00041.png) 1974-05-01
DE2331664B2 (de) 1978-10-19
FR2190525B1 (US06168776-20010102-C00041.png) 1976-09-17
FR2190525A1 (US06168776-20010102-C00041.png) 1974-02-01
DE2331664C3 (de) 1979-06-07
CA995565A (en) 1976-08-24
JPS5320351B2 (US06168776-20010102-C00041.png) 1978-06-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee