GB1302993A - - Google Patents

Info

Publication number
GB1302993A
GB1302993A GB1861671*[A GB1861671A GB1302993A GB 1302993 A GB1302993 A GB 1302993A GB 1861671 A GB1861671 A GB 1861671A GB 1302993 A GB1302993 A GB 1302993A
Authority
GB
United Kingdom
Prior art keywords
tube
ground
suction
stopper
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1861671*[A
Other languages
English (en)
Inventor
R Emeis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1302993A publication Critical patent/GB1302993A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
GB1861671*[A 1970-07-06 1971-06-02 Expired GB1302993A (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2033444A DE2033444C3 (de) 1970-07-06 1970-07-06 Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
GB1302993A true GB1302993A (cg-RX-API-DMAC7.html) 1973-01-10

Family

ID=5775931

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1861671*[A Expired GB1302993A (cg-RX-API-DMAC7.html) 1970-07-06 1971-06-02

Country Status (12)

Country Link
US (1) US3705567A (cg-RX-API-DMAC7.html)
JP (1) JPS4910190B1 (cg-RX-API-DMAC7.html)
AT (1) AT336679B (cg-RX-API-DMAC7.html)
BE (1) BE764513A (cg-RX-API-DMAC7.html)
CA (1) CA944869A (cg-RX-API-DMAC7.html)
CH (1) CH524252A (cg-RX-API-DMAC7.html)
CS (1) CS149456B2 (cg-RX-API-DMAC7.html)
DE (1) DE2033444C3 (cg-RX-API-DMAC7.html)
FR (1) FR2100223A5 (cg-RX-API-DMAC7.html)
GB (1) GB1302993A (cg-RX-API-DMAC7.html)
NL (1) NL7109322A (cg-RX-API-DMAC7.html)
SE (1) SE377286B (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0077408A1 (en) * 1981-10-16 1983-04-27 Helmut Seier GmbH A method and apparatus for the heat treatment of semiconductor articles

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2324365C3 (de) * 1973-05-14 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper
BE817066R (fr) * 1973-11-29 1974-10-16 Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes
JPS51119592A (en) * 1975-04-12 1976-10-20 Hitachi Zosen Corp Polishing-sweeping head
JPS51119591A (en) * 1975-04-12 1976-10-20 Hitachi Zosen Corp Device of injecting polishing-sweeping material
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
FR2670219B1 (fr) * 1990-12-07 1993-03-19 Europ Propulsion Appareil et creuset pour depot en phase vapeur.
KR930008872B1 (ko) * 1991-02-18 1993-09-16 삼성전자 주식회사 Open-Tube형 불순물 확산장치
JP3971810B2 (ja) * 1995-11-30 2007-09-05 三星電子株式会社 縦型拡散炉
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
ATE452445T1 (de) 1999-03-04 2010-01-15 Nichia Corp Nitridhalbleiterlaserelement
JP4301564B2 (ja) * 2004-04-27 2009-07-22 株式会社山寿セラミックス 圧電性酸化物単結晶の帯電抑制処理方法、および帯電抑制処理装置
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3202485A (en) * 1962-05-01 1965-08-24 Alton F Armington Sublimation apparatus
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
DE1262244B (de) * 1964-12-23 1968-03-07 Siemens Ag Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial
DE1297086B (de) * 1965-01-29 1969-06-12 Siemens Ag Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial
US3394390A (en) * 1965-03-31 1968-07-23 Texas Instruments Inc Method for making compond semiconductor materials
US3371995A (en) * 1965-07-09 1968-03-05 Corning Glass Works Method of making macroscopic silicon carbide fibers with a silica sheath
DE1521494B1 (de) * 1966-02-25 1970-11-26 Siemens Ag Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0077408A1 (en) * 1981-10-16 1983-04-27 Helmut Seier GmbH A method and apparatus for the heat treatment of semiconductor articles

Also Published As

Publication number Publication date
CA944869A (en) 1974-04-02
ATA528771A (de) 1976-09-15
BE764513A (fr) 1971-08-16
DE2033444B2 (de) 1978-06-22
US3705567A (en) 1972-12-12
CH524252A (de) 1972-06-15
CS149456B2 (cg-RX-API-DMAC7.html) 1973-07-05
FR2100223A5 (cg-RX-API-DMAC7.html) 1972-03-17
DE2033444A1 (de) 1972-01-20
AT336679B (de) 1977-05-25
DE2033444C3 (de) 1979-02-15
NL7109322A (cg-RX-API-DMAC7.html) 1972-01-10
SE377286B (cg-RX-API-DMAC7.html) 1975-06-30
JPS4910190B1 (cg-RX-API-DMAC7.html) 1974-03-08

Similar Documents

Publication Publication Date Title
GB945742A (cg-RX-API-DMAC7.html)
GB1024509A (en) A passivated semiconductor device and method of making same
GB1311048A (en) Methods of treating semiconductors
US3705567A (en) Device for indiffussing dopants into semiconductor wafers
GB1281043A (en) Improvements in semiconductor devices
GB1137286A (en) Protective element for hermetically enclosed semiconductor devices
GB1513640A (en) Process for manufacturing a hybrid oxide
JPS5232269A (en) Hermetic sealing method of semiconductor devices
GB1004507A (en) Improved semiconductor devices
CA969290A (en) Fabrication of semiconductor devices incorporating polycrystalline silicon
GB1258226A (cg-RX-API-DMAC7.html)
GB984141A (en) Improvements in or relating to methods of alloying to semiconductor bodies
GB1352202A (en) Semiconductor devices
GB854103A (en) Shock proof package
GB829698A (en) Improvements relating to the closure of vacuum phials and like containers
GB843407A (en) Improvements in and relating to semi-conductor devices
GB1312226A (en) Diffusion of doping substances into wafers of semiconductor material
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5693345A (en) Packing method of ceramic sealed-type semiconductor device
JPS5374368A (en) Package for semiconductor device
GB714199A (en) Improvements relating to crystal valves
GB851751A (en) Improvements in and relating to the construction of semi-conductor diodes
GB973104A (en) Improvements relating to the manufacture of semi-conductor devices
GB966320A (en) Improvements in or relating to methods of manufacturing semi-conductor devices
JPS6489449A (en) Semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee