CH524252A - Anordnung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial - Google Patents

Anordnung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial

Info

Publication number
CH524252A
CH524252A CH726671A CH726671A CH524252A CH 524252 A CH524252 A CH 524252A CH 726671 A CH726671 A CH 726671A CH 726671 A CH726671 A CH 726671A CH 524252 A CH524252 A CH 524252A
Authority
CH
Switzerland
Prior art keywords
dopants
diffusion
arrangement
semiconductor material
wafers made
Prior art date
Application number
CH726671A
Other languages
English (en)
Inventor
Reimer Dr Emeis
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH524252A publication Critical patent/CH524252A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CH726671A 1970-07-06 1971-05-18 Anordnung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial CH524252A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2033444A DE2033444C3 (de) 1970-07-06 1970-07-06 Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
CH524252A true CH524252A (de) 1972-06-15

Family

ID=5775931

Family Applications (1)

Application Number Title Priority Date Filing Date
CH726671A CH524252A (de) 1970-07-06 1971-05-18 Anordnung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial

Country Status (12)

Country Link
US (1) US3705567A (de)
JP (1) JPS4910190B1 (de)
AT (1) AT336679B (de)
BE (1) BE764513A (de)
CA (1) CA944869A (de)
CH (1) CH524252A (de)
CS (1) CS149456B2 (de)
DE (1) DE2033444C3 (de)
FR (1) FR2100223A5 (de)
GB (1) GB1302993A (de)
NL (1) NL7109322A (de)
SE (1) SE377286B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2324365C3 (de) * 1973-05-14 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper
BE817066R (fr) * 1973-11-29 1974-10-16 Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes
JPS51119591A (en) * 1975-04-12 1976-10-20 Hitachi Zosen Corp Device of injecting polishing-sweeping material
JPS51119592A (en) * 1975-04-12 1976-10-20 Hitachi Zosen Corp Polishing-sweeping head
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
EP0077408A1 (de) * 1981-10-16 1983-04-27 Helmut Seier GmbH Verfahren und Gerät zum thermischen Behandeln von Halbleiterkörpern
FR2670219B1 (fr) * 1990-12-07 1993-03-19 Europ Propulsion Appareil et creuset pour depot en phase vapeur.
KR930008872B1 (ko) * 1991-02-18 1993-09-16 삼성전자 주식회사 Open-Tube형 불순물 확산장치
JP3971810B2 (ja) * 1995-11-30 2007-09-05 三星電子株式会社 縦型拡散炉
WO1999005728A1 (en) 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
ATE452445T1 (de) 1999-03-04 2010-01-15 Nichia Corp Nitridhalbleiterlaserelement
JP4301564B2 (ja) * 2004-04-27 2009-07-22 株式会社山寿セラミックス 圧電性酸化物単結晶の帯電抑制処理方法、および帯電抑制処理装置
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3202485A (en) * 1962-05-01 1965-08-24 Alton F Armington Sublimation apparatus
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
DE1262244B (de) * 1964-12-23 1968-03-07 Siemens Ag Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial
DE1297086B (de) * 1965-01-29 1969-06-12 Siemens Ag Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial
US3394390A (en) * 1965-03-31 1968-07-23 Texas Instruments Inc Method for making compond semiconductor materials
US3371995A (en) * 1965-07-09 1968-03-05 Corning Glass Works Method of making macroscopic silicon carbide fibers with a silica sheath
DE1521494B1 (de) * 1966-02-25 1970-11-26 Siemens Ag Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper

Also Published As

Publication number Publication date
US3705567A (en) 1972-12-12
JPS4910190B1 (de) 1974-03-08
SE377286B (de) 1975-06-30
NL7109322A (de) 1972-01-10
FR2100223A5 (de) 1972-03-17
DE2033444A1 (de) 1972-01-20
ATA528771A (de) 1976-09-15
BE764513A (fr) 1971-08-16
CA944869A (en) 1974-04-02
DE2033444B2 (de) 1978-06-22
DE2033444C3 (de) 1979-02-15
CS149456B2 (de) 1973-07-05
AT336679B (de) 1977-05-25
GB1302993A (de) 1973-01-10

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Legal Events

Date Code Title Description
PL Patent ceased