GB1352202A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1352202A
GB1352202A GB4772771A GB4772771A GB1352202A GB 1352202 A GB1352202 A GB 1352202A GB 4772771 A GB4772771 A GB 4772771A GB 4772771 A GB4772771 A GB 4772771A GB 1352202 A GB1352202 A GB 1352202A
Authority
GB
United Kingdom
Prior art keywords
materials
electrode
semi
conductor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4772771A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1352202A publication Critical patent/GB1352202A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Abstract

1352202 Semi-conductor devices SIEMENS AG 13 Oct 1971 [13 Oct 1970] 47727/71 Heading H1K The electrical characteristics of two IGFET's in a common semi-conductor substrate 2 are caused to differ by appropriate selection of materials for the gate electrodes 6, 8, the essential requirement being that the work functions of the electrode materials differ. In one example both gate insulations 10, 12 are made of silicon dioxide, the gate electrodes 6 and 8 being made of Al and polycrystalline Si respectively. The gate insulations may also be of different materials, and other examples given are silicon nitride with an Ag electrode and aluminium oxide with a Ni electrode, Si, Ge and GaAs are referred to as suitable semi-conductor materials.
GB4772771A 1970-10-13 1971-10-13 Semiconductor devices Expired GB1352202A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702050320 DE2050320A1 (en) 1970-10-13 1970-10-13 Semiconductor device

Publications (1)

Publication Number Publication Date
GB1352202A true GB1352202A (en) 1974-05-08

Family

ID=5785031

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4772771A Expired GB1352202A (en) 1970-10-13 1971-10-13 Semiconductor devices

Country Status (4)

Country Link
DE (1) DE2050320A1 (en)
FR (1) FR2110392B1 (en)
GB (1) GB1352202A (en)
NL (1) NL7113931A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3834959A (en) * 1972-06-30 1974-09-10 Ibm Process for the formation of selfaligned silicon and aluminum gates
CH657712A5 (en) * 1978-03-08 1986-09-15 Hitachi Ltd REFERENCE VOLTAGE GENERATOR.

Also Published As

Publication number Publication date
FR2110392A1 (en) 1972-06-02
FR2110392B1 (en) 1975-07-18
DE2050320A1 (en) 1972-04-20
NL7113931A (en) 1972-04-17

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees