GB1312226A - Diffusion of doping substances into wafers of semiconductor material - Google Patents

Diffusion of doping substances into wafers of semiconductor material

Info

Publication number
GB1312226A
GB1312226A GB2860671A GB2860671A GB1312226A GB 1312226 A GB1312226 A GB 1312226A GB 2860671 A GB2860671 A GB 2860671A GB 2860671 A GB2860671 A GB 2860671A GB 1312226 A GB1312226 A GB 1312226A
Authority
GB
United Kingdom
Prior art keywords
wafers
tube
diffusion
semi
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2860671A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1312226A publication Critical patent/GB1312226A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

1312226 Semi-conductor devices SIEMENS AG 18 June 1971 [27 July 1970] 28606/71 Heading H1K A diffusion method comprises accommodating semi-conductor wafers 3 within a tube 1 of material non-reactive with the wafers at diffusion temperatures, maintaining the wafers at the diffusion temperature in a vacuum at an inert gas atmosphere in the presence of a doping substance, the wafers being supported between the tube wall and a holding device 8, the device 8 also being of a material which does not react with the wafers at the diffusion temperature. The tube and device 8 may be of the same semi-conductor material as the wafers, e.g. silicon, or of a sintered material, e.g. silicon carbide. The device 8 may have a single recess 9 parallel to the longitudinal axis of the tube, as shown, or a plurality of such recesses, being in cross-section like a three, five or six pointed star. The device 8 may have an end plate to hold the wafers in place, which plate may also seal one end of the tube. In an alternative construction, the walls of the tube may have longitudinal recesses, the holding device being of circular or recessed cross-section.
GB2860671A 1970-07-27 1971-06-18 Diffusion of doping substances into wafers of semiconductor material Expired GB1312226A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702037173 DE2037173A1 (en) 1970-07-27 1970-07-27 Arrangement for diffusing dopants into slices made of semiconductor material

Publications (1)

Publication Number Publication Date
GB1312226A true GB1312226A (en) 1973-04-04

Family

ID=5778005

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2860671A Expired GB1312226A (en) 1970-07-27 1971-06-18 Diffusion of doping substances into wafers of semiconductor material

Country Status (9)

Country Link
JP (1) JPS4915102B1 (en)
BE (1) BE770550A (en)
CA (1) CA932481A (en)
CH (1) CH561082A5 (en)
DE (1) DE2037173A1 (en)
FR (1) FR2103051A5 (en)
GB (1) GB1312226A (en)
NL (1) NL7107778A (en)
SE (1) SE385785B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
JPS57143428A (en) * 1981-02-27 1982-09-04 High Frequency Heattreat Co Ltd Induction heating and hardening method

Also Published As

Publication number Publication date
CA932481A (en) 1973-08-21
NL7107778A (en) 1972-01-31
FR2103051A5 (en) 1972-04-07
SE385785B (en) 1976-07-26
CH561082A5 (en) 1975-04-30
JPS4915102B1 (en) 1974-04-12
BE770550A (en) 1972-01-27
DE2037173A1 (en) 1972-02-03

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Legal Events

Date Code Title Description
PS Patent sealed