GB1282363A - Improvements in or relating to apparatus for use in the diffusion of a doping substance into a body of semiconductor material - Google Patents

Improvements in or relating to apparatus for use in the diffusion of a doping substance into a body of semiconductor material

Info

Publication number
GB1282363A
GB1282363A GB3136770A GB3136770A GB1282363A GB 1282363 A GB1282363 A GB 1282363A GB 3136770 A GB3136770 A GB 3136770A GB 3136770 A GB3136770 A GB 3136770A GB 1282363 A GB1282363 A GB 1282363A
Authority
GB
United Kingdom
Prior art keywords
tube
semi
silicon
conductor
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3136770A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1282363A publication Critical patent/GB1282363A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1282363 Semi-conductor device manufacture SIEMENS AG 29 June 1970 [30 June 1969] 31367/70 Heading H1K Diffusion of impurity into a semi-conductor wafer is effected within an open-ended tube of semi-conductor material with walls at least 5 mm. thick. The tube, preferably made of the same material as the wafer, may be outwardly flared at both ends and fitted with quartz plugs through which the diffusant gas enters and leaves. The tube can be made by boring out a rod of monocrystalline silicon or by deposition from a gaseous compound of silicon on to a carrier which is subsequently removed, and when appropriately doped is provided with terminal electrodes so that it can function as a resistance heater or with a metallic ring for inductive heating by a surrounding coil. Alternative materials specified for the tube are the carbides of silicon, tungsten and titanium, gallium arsenide, indium phosphide, boron nitride and germanium. Specified donor doping diffusant gases are phosphorus pentoxide and trichloride, phosphine, and phosphonitrylic chloride, in argon or other inert carrier gas.
GB3136770A 1969-06-30 1970-06-29 Improvements in or relating to apparatus for use in the diffusion of a doping substance into a body of semiconductor material Expired GB1282363A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691933128 DE1933128C3 (en) 1969-06-30 1969-06-30 Tube for diffusing dopants into semiconductor bodies

Publications (1)

Publication Number Publication Date
GB1282363A true GB1282363A (en) 1972-07-19

Family

ID=5738424

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3136770A Expired GB1282363A (en) 1969-06-30 1970-06-29 Improvements in or relating to apparatus for use in the diffusion of a doping substance into a body of semiconductor material

Country Status (8)

Country Link
JP (1) JPS4823710B1 (en)
AT (1) AT328509B (en)
CH (1) CH518622A (en)
DE (1) DE1933128C3 (en)
FR (1) FR2051429A5 (en)
GB (1) GB1282363A (en)
NL (1) NL165795C (en)
SE (1) SE358667B (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2126417A (en) * 1982-08-26 1984-03-21 Heraeus Schott Quarzschmelze Support systems for conveying semiconductor devices into hostile environments during manufacture
GB2135115A (en) * 1983-02-09 1984-08-22 Heraeus Schott Quarzschmelze Improvements in or relating to support systems
GB2159328A (en) * 1984-05-21 1985-11-27 Christopher Frank Mcconnell Vessel and apparatus for treating wafers with fluids
US4633893A (en) * 1984-05-21 1987-01-06 Cfm Technologies Limited Partnership Apparatus for treating semiconductor wafers
US4738272A (en) * 1984-05-21 1988-04-19 Mcconnell Christopher F Vessel and system for treating wafers with fluids
US4740249A (en) * 1984-05-21 1988-04-26 Christopher F. McConnell Method of treating wafers with fluid
US4856544A (en) * 1984-05-21 1989-08-15 Cfm Technologies, Inc. Vessel and system for treating wafers with fluids
US6136724A (en) * 1997-02-18 2000-10-24 Scp Global Technologies Multiple stage wet processing chamber

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2126417A (en) * 1982-08-26 1984-03-21 Heraeus Schott Quarzschmelze Support systems for conveying semiconductor devices into hostile environments during manufacture
GB2135115A (en) * 1983-02-09 1984-08-22 Heraeus Schott Quarzschmelze Improvements in or relating to support systems
GB2159328A (en) * 1984-05-21 1985-11-27 Christopher Frank Mcconnell Vessel and apparatus for treating wafers with fluids
US4633893A (en) * 1984-05-21 1987-01-06 Cfm Technologies Limited Partnership Apparatus for treating semiconductor wafers
US4738272A (en) * 1984-05-21 1988-04-19 Mcconnell Christopher F Vessel and system for treating wafers with fluids
US4740249A (en) * 1984-05-21 1988-04-26 Christopher F. McConnell Method of treating wafers with fluid
US4856544A (en) * 1984-05-21 1989-08-15 Cfm Technologies, Inc. Vessel and system for treating wafers with fluids
US6136724A (en) * 1997-02-18 2000-10-24 Scp Global Technologies Multiple stage wet processing chamber

Also Published As

Publication number Publication date
JPS4823710B1 (en) 1973-07-16
DE1933128A1 (en) 1971-01-21
CH518622A (en) 1972-01-31
DE1933128C3 (en) 1978-08-10
DE1933128B2 (en) 1977-12-08
NL165795C (en) 1981-05-15
AT328509B (en) 1976-03-25
FR2051429A5 (en) 1971-04-02
NL165795B (en) 1980-12-15
SE358667B (en) 1973-08-06
NL7007490A (en) 1971-01-04
ATA583270A (en) 1975-06-15

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee