GB1249537A - Method of growing semiconductor rods from a pedestal - Google Patents

Method of growing semiconductor rods from a pedestal

Info

Publication number
GB1249537A
GB1249537A GB59190/69A GB5919069A GB1249537A GB 1249537 A GB1249537 A GB 1249537A GB 59190/69 A GB59190/69 A GB 59190/69A GB 5919069 A GB5919069 A GB 5919069A GB 1249537 A GB1249537 A GB 1249537A
Authority
GB
United Kingdom
Prior art keywords
cylinder
centre
annulus
maintained
annular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB59190/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of GB1249537A publication Critical patent/GB1249537A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB59190/69A 1969-04-03 1969-12-04 Method of growing semiconductor rods from a pedestal Expired GB1249537A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81326769A 1969-04-03 1969-04-03

Publications (1)

Publication Number Publication Date
GB1249537A true GB1249537A (en) 1971-10-13

Family

ID=25211930

Family Applications (1)

Application Number Title Priority Date Filing Date
GB59190/69A Expired GB1249537A (en) 1969-04-03 1969-12-04 Method of growing semiconductor rods from a pedestal

Country Status (7)

Country Link
US (1) US3627500A (xx)
JP (1) JPS4833876B1 (xx)
BE (1) BE748377A (xx)
DE (1) DE2016101C3 (xx)
FR (1) FR2038216B1 (xx)
GB (1) GB1249537A (xx)
NL (1) NL7004740A (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2220300A (en) * 1985-11-12 1990-01-04 Sony Corp A method of manufacturing silicon substrates

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5094103A (xx) * 1973-12-21 1975-07-26
DE2649201C2 (de) * 1976-10-28 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von einkristallinen Halbleitermaterialbändern durch senkrechtes Ziehen aus einem Schmelzfilm unter Verwendung eines Formgebungsteils
DE2649223C2 (de) * 1976-10-28 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von einkristallinen Halbleitermaterialbändern durch senkrechtes Ziehen aus einem Schmelzfilm
JPS5420105A (en) * 1977-07-13 1979-02-15 Totsuto Shiyouji Yuugen Production of leather article with backing material
JPS5470401A (en) * 1977-11-12 1979-06-06 Nakatora Kk Multilevel patterning on leather
JPH0412083A (ja) * 1990-04-27 1992-01-16 Osaka Titanium Co Ltd シリコン単結晶製造方法
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
US6126742A (en) * 1996-09-20 2000-10-03 Forshungszentrum Karlsruhe Gmbh Method of drawing single crystals
DE19638563C2 (de) * 1996-09-20 1999-07-08 Karlsruhe Forschzent Verfahren zum Ziehen von Einkristallen
US20040255442A1 (en) * 2003-06-19 2004-12-23 Mcdiarmid James Methods and apparatus for processing workpieces
CN112058596B (zh) * 2020-09-14 2022-12-02 河源市璐悦自动化设备有限公司 一种大尺寸lcd光学玻璃的均匀涂胶工艺

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2220300A (en) * 1985-11-12 1990-01-04 Sony Corp A method of manufacturing silicon substrates
GB2220300B (en) * 1985-11-12 1990-04-18 Sony Corp A method of manufacturing silicon substrate

Also Published As

Publication number Publication date
FR2038216B1 (xx) 1974-12-06
NL7004740A (xx) 1970-10-06
JPS4833876B1 (xx) 1973-10-17
DE2016101A1 (de) 1970-10-08
DE2016101B2 (de) 1973-04-26
DE2016101C3 (de) 1973-11-22
US3627500A (en) 1971-12-14
FR2038216A1 (xx) 1971-01-08
BE748377A (fr) 1970-10-02

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