GB1161647A - Thin Film Field-Effect Solid State Devices - Google Patents
Thin Film Field-Effect Solid State DevicesInfo
- Publication number
- GB1161647A GB1161647A GB33569/68A GB3356968A GB1161647A GB 1161647 A GB1161647 A GB 1161647A GB 33569/68 A GB33569/68 A GB 33569/68A GB 3356968 A GB3356968 A GB 3356968A GB 1161647 A GB1161647 A GB 1161647A
- Authority
- GB
- United Kingdom
- Prior art keywords
- aluminium
- layer
- vapour
- plasma
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65854167A | 1967-08-04 | 1967-08-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1161647A true GB1161647A (en) | 1969-08-13 |
Family
ID=24641673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB33569/68A Expired GB1161647A (en) | 1967-08-04 | 1968-07-15 | Thin Film Field-Effect Solid State Devices |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1764756B2 (https=) |
| FR (1) | FR1572063A (https=) |
| GB (1) | GB1161647A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2322461A1 (fr) * | 1975-08-29 | 1977-03-25 | Westinghouse Electric Corp | Transistor a film mince |
| FR2378355A1 (fr) * | 1977-01-26 | 1978-08-18 | Westinghouse Electric Corp | Film de transition, mince, entre un film d'aluminium et un film indium-cuivre |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2704312A1 (de) * | 1976-08-20 | 1978-02-23 | Westinghouse Electric Corp | Duennschicht-transistoreinrichtung |
| JPS58100461A (ja) * | 1981-12-10 | 1983-06-15 | Japan Electronic Ind Dev Assoc<Jeida> | 薄膜トランジスタの製造方法 |
-
1968
- 1968-07-15 GB GB33569/68A patent/GB1161647A/en not_active Expired
- 1968-07-18 FR FR1572063D patent/FR1572063A/fr not_active Expired
- 1968-07-31 DE DE19681764756 patent/DE1764756B2/de active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2322461A1 (fr) * | 1975-08-29 | 1977-03-25 | Westinghouse Electric Corp | Transistor a film mince |
| FR2378355A1 (fr) * | 1977-01-26 | 1978-08-18 | Westinghouse Electric Corp | Film de transition, mince, entre un film d'aluminium et un film indium-cuivre |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1764756A1 (de) | 1972-01-13 |
| DE1764756C3 (https=) | 1974-02-21 |
| DE1764756B2 (de) | 1973-07-19 |
| FR1572063A (https=) | 1969-06-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |