GB1161647A - Thin Film Field-Effect Solid State Devices - Google Patents

Thin Film Field-Effect Solid State Devices

Info

Publication number
GB1161647A
GB1161647A GB33569/68A GB3356968A GB1161647A GB 1161647 A GB1161647 A GB 1161647A GB 33569/68 A GB33569/68 A GB 33569/68A GB 3356968 A GB3356968 A GB 3356968A GB 1161647 A GB1161647 A GB 1161647A
Authority
GB
United Kingdom
Prior art keywords
aluminium
layer
vapour
plasma
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33569/68A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1161647A publication Critical patent/GB1161647A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6319Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6324Formation by anodic treatments, e.g. anodic oxidation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
GB33569/68A 1967-08-04 1968-07-15 Thin Film Field-Effect Solid State Devices Expired GB1161647A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65854167A 1967-08-04 1967-08-04

Publications (1)

Publication Number Publication Date
GB1161647A true GB1161647A (en) 1969-08-13

Family

ID=24641673

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33569/68A Expired GB1161647A (en) 1967-08-04 1968-07-15 Thin Film Field-Effect Solid State Devices

Country Status (3)

Country Link
DE (1) DE1764756B2 (https=)
FR (1) FR1572063A (https=)
GB (1) GB1161647A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2322461A1 (fr) * 1975-08-29 1977-03-25 Westinghouse Electric Corp Transistor a film mince
FR2378355A1 (fr) * 1977-01-26 1978-08-18 Westinghouse Electric Corp Film de transition, mince, entre un film d'aluminium et un film indium-cuivre

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2704312A1 (de) * 1976-08-20 1978-02-23 Westinghouse Electric Corp Duennschicht-transistoreinrichtung
JPS58100461A (ja) * 1981-12-10 1983-06-15 Japan Electronic Ind Dev Assoc<Jeida> 薄膜トランジスタの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2322461A1 (fr) * 1975-08-29 1977-03-25 Westinghouse Electric Corp Transistor a film mince
FR2378355A1 (fr) * 1977-01-26 1978-08-18 Westinghouse Electric Corp Film de transition, mince, entre un film d'aluminium et un film indium-cuivre

Also Published As

Publication number Publication date
DE1764756A1 (de) 1972-01-13
DE1764756C3 (https=) 1974-02-21
DE1764756B2 (de) 1973-07-19
FR1572063A (https=) 1969-06-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees