DE1764756B2 - Verfahren zur herstellung eines duennfilm-feldeffekt-bauelementes - Google Patents

Verfahren zur herstellung eines duennfilm-feldeffekt-bauelementes

Info

Publication number
DE1764756B2
DE1764756B2 DE19681764756 DE1764756A DE1764756B2 DE 1764756 B2 DE1764756 B2 DE 1764756B2 DE 19681764756 DE19681764756 DE 19681764756 DE 1764756 A DE1764756 A DE 1764756A DE 1764756 B2 DE1764756 B2 DE 1764756B2
Authority
DE
Germany
Prior art keywords
manufacturing
thin film
field effect
effect component
film field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19681764756
Other languages
German (de)
English (en)
Other versions
DE1764756A1 (de
DE1764756C3 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE1764756A1 publication Critical patent/DE1764756A1/de
Publication of DE1764756B2 publication Critical patent/DE1764756B2/de
Application granted granted Critical
Publication of DE1764756C3 publication Critical patent/DE1764756C3/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
DE19681764756 1967-08-04 1968-07-31 Verfahren zur herstellung eines duennfilm-feldeffekt-bauelementes Granted DE1764756B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65854167A 1967-08-04 1967-08-04

Publications (3)

Publication Number Publication Date
DE1764756A1 DE1764756A1 (de) 1972-01-13
DE1764756B2 true DE1764756B2 (de) 1973-07-19
DE1764756C3 DE1764756C3 (https=) 1974-02-21

Family

ID=24641673

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681764756 Granted DE1764756B2 (de) 1967-08-04 1968-07-31 Verfahren zur herstellung eines duennfilm-feldeffekt-bauelementes

Country Status (3)

Country Link
DE (1) DE1764756B2 (https=)
FR (1) FR1572063A (https=)
GB (1) GB1161647A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2637481A1 (de) * 1975-08-29 1977-03-03 Westinghouse Electric Corp Duennschicht-transistoreinrichtung
DE2704312A1 (de) * 1976-08-20 1978-02-23 Westinghouse Electric Corp Duennschicht-transistoreinrichtung
DE3245313A1 (de) * 1981-12-10 1983-06-23 Japan Electronic Industry Development Association, Tokyo Verfahren zur herstellung von duennfilm-transistoren

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4115799A (en) * 1977-01-26 1978-09-19 Westinghouse Electric Corp. Thin film copper transition between aluminum and indium copper films

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2637481A1 (de) * 1975-08-29 1977-03-03 Westinghouse Electric Corp Duennschicht-transistoreinrichtung
DE2704312A1 (de) * 1976-08-20 1978-02-23 Westinghouse Electric Corp Duennschicht-transistoreinrichtung
DE3245313A1 (de) * 1981-12-10 1983-06-23 Japan Electronic Industry Development Association, Tokyo Verfahren zur herstellung von duennfilm-transistoren

Also Published As

Publication number Publication date
DE1764756A1 (de) 1972-01-13
DE1764756C3 (https=) 1974-02-21
FR1572063A (https=) 1969-06-20
GB1161647A (en) 1969-08-13

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)