JPS6425466A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS6425466A
JPS6425466A JP62181502A JP18150287A JPS6425466A JP S6425466 A JPS6425466 A JP S6425466A JP 62181502 A JP62181502 A JP 62181502A JP 18150287 A JP18150287 A JP 18150287A JP S6425466 A JPS6425466 A JP S6425466A
Authority
JP
Japan
Prior art keywords
semiconductor
bit line
groove
upper face
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62181502A
Other languages
Japanese (ja)
Inventor
Kazuhiro Matsuyama
Takashi Osone
Masanori Fukumoto
Mitsuo Yasuhira
Toshiki Yabu
Yoshiyuki Iwata
Yohei Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62181502A priority Critical patent/JPS6425466A/en
Publication of JPS6425466A publication Critical patent/JPS6425466A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To reduce a signal delay in a bit line by forming a word line and a semiconductor in parallel on the upper face of a storage electrode, forming the semiconductor on their upper face, and further forming a bit line on its upper face. CONSTITUTION:A dielectric film 3 is formed on the inner face of a groove 2 formed on a P<+> type substrate 1. An N<+> type storage electrode 4 and a P-type semiconductor 5 are formed in the groove 2 to form a groove 12. The interior of the groove 12 is oxidized to form a gate oxide film 7, a word line 6 is formed, and the upper face of the line 6 is oxidized. An N<+> type semiconductor 8 is formed on the semiconductor 5 and the film 7. An insulating film 10 is formed thereon, a bit line 9 is formed of an aluminum film, and the semiconductor 8 is contacted with a bit line contact 11. Thus, a signal delay in the bit line can be reduced.
JP62181502A 1987-07-21 1987-07-21 Semiconductor memory cell Pending JPS6425466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62181502A JPS6425466A (en) 1987-07-21 1987-07-21 Semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181502A JPS6425466A (en) 1987-07-21 1987-07-21 Semiconductor memory cell

Publications (1)

Publication Number Publication Date
JPS6425466A true JPS6425466A (en) 1989-01-27

Family

ID=16101879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181502A Pending JPS6425466A (en) 1987-07-21 1987-07-21 Semiconductor memory cell

Country Status (1)

Country Link
JP (1) JPS6425466A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216266A (en) * 1990-04-11 1993-06-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having memory cells formed in trench and manufacturing method therefor
US5281837A (en) * 1990-05-28 1994-01-25 Kabushiki Kaisha Toshiba Semiconductor memory device having cross-point DRAM cell structure
JPH08213567A (en) * 1994-11-21 1996-08-20 Lg Semicon Co Ltd Semiconductor memory device and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216266A (en) * 1990-04-11 1993-06-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having memory cells formed in trench and manufacturing method therefor
US5281837A (en) * 1990-05-28 1994-01-25 Kabushiki Kaisha Toshiba Semiconductor memory device having cross-point DRAM cell structure
JPH08213567A (en) * 1994-11-21 1996-08-20 Lg Semicon Co Ltd Semiconductor memory device and its manufacture

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